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Akshay M. Arabhavi

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Journal Articles

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2023
[j1]
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  - journals/tcad/MukherjeeGDBBVCACOBMM23
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C. Mukherjee, Djeber Guendouz, Marina Deng, H. Bertin, Antoine Bobin, Nicolas Vaissiere, Christophe Caillaud, Akshay M. Arabhavi, Rimjhim Chaudhary, Olivier Ostinelli, Colombo R. Bolognesi, Patrick Mounaix, Cristell Maneux:
SPICE Modeling in Verilog-A for Photo-Response in UTC-Photodiodes Targeting Beyond-5G Circuit Design. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 42(9): 3045-3052 (2023)

Conference and Workshop Papers

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2024
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Filippo Ciabattini, Akshay M. Arabhavi, Sara Hamzeloui, G. Bonomo, M. Ebrahimi, Olivier Ostinelli, Colombo R. Bolognesi:
High-Temperature Stability Base Ohmic Contacts for InP/GaAsSb DHBTs. BCICTS 2024: 84-87
[c9]
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Rimjhim Chaudhary, Akshay M. Arabhavi, Sara Hamzeloui, Martin Leich, Olivier Ostinelli, Colombo R. Bolognesi:
Type-II GaInAsSb/InP Modified Uni-Traveling Carrier Photodiodes Under Zero-Bias Operation. OFC 2024: 1-3
2023
[c8]
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Filippo Ciabattini, Akshay M. Arabhavi, Sara Hamzeloui, Mojtaba Ebrahimi, Olivier Ostinelli, Colombo R. Bolognesi:
Thermal Characterization of InP/GaAsSb DHBTs: Effect of Emitter and Collector Layers. BCICTS 2023: 24-27
[c7]
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Sara Hamzeloui, Akshay M. Arabhavi, Filippo Ciabattini, Mojtaba Ebrahimi, Markus Müller, Olivier Ostinelli, Michael Schröter, Colombo R. Bolognesi:
Multi-Finger 250-nm InP/GaAsSb DHBTs with Record 37.3 % Class-A PAE at 94 GHz. BCICTS 2023: 145-148
[c6]
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Rimjhim Chaudhary, Akshay M. Arabhavi, Laurenz Kulmer, Sara Hamzeloui, Marco Eppenberger, Martin Leich, Olivier Ostinelli, Juerg Leuthold, Colombo R. Bolognesi:
High-Power Performance of Type-II GaInAsSb/InP Uniform Absorber Uni-Traveling Carrier Photodiodes. OFC 2023: 1-3
2022
[c5]
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Sara Hamzeloui, Filippo Ciabattini, Akshay M. Arabhavi, W. Quan, Diego Marti, Mojtaba Ebrahimi, Olivier Ostinelli, Colombo R. Bolognesi:
Highly-Linear InP/GaAsSb DHBTs with 18.2 dBm OIP3 at 45 GHz: Comparison of Common-Base and Common-Emitter Structures. BCICTS 2022: 108-111
[c4]
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Colombo R. Bolognesi, Akshay M. Arabhavi, Romain Hersent, Sara Hamzeloui, Filipe Jorge, X. Wen, Muriel Riet, Mathieu Luisier, Virginie Nodjiadjim, Filippo Ciabattini, Colin Mismer, Olivier Ostinelli, Agnieszka Konczykowska:
InP/GaAsSb DHBTs: THz Analog Performance and Record 180-Gb/s 5.5Vppd-Swing PAM-4 DAC-Driver. BCICTS 2022: 112-119
2019
[c3]
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Wei Quan, Akshay M. Arabhavi, Diego Marti, Sara Hamzeloui, Olivier Ostinelli, Colombo R. Bolognesi:
InP/GaAsSb DHBT Power Performance with 30% Class-A PAE at 94 GHz. BCICTS 2019: 1-4
2018
[c2]
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Wei Quan, Akshay M. Arabhavi, R. Flueckiger, Olivier Ostinelli, Colombo R. Bolognesi:
Iterative De-Embedding and Extracted Maximum Oscillation Frequency f_MAX in mm-Wave InP DHBTs: Impact of Device Dimensions on Extraction Errors. BCICTS 2018: 110-113
[c1]
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Akshay M. Arabhavi, Wei Quan, Olivier Ostinelli, Colombo R. Bolognesi:
Scaling of InP/GaAsSb DHBTs: A Simultaneous f_T/f_MAX=463/829GHz in a 10µm Long Emitter. BCICTS 2018: 132-135

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