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ORCIDLaurent Duraffourg
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2010 – 2019
- 2016
[c7]Ludovic Laurent, Jean-Jacques Yon, Jean-Sebastien Moulet, Pierre Imperinetti, Laurent Duraffourg
:
Torsional nano-resonator: Characterization of a nonlinear hardening behavior and noise analysis. IEEE SENSORS 2016: 1-3- 2015
- [c6]Thomas Ernst, Sebastien Hentz, Julien Arcamone, Vincent Agache, Laurent Duraffourg, Issam Ouerghi, Willy Ludurczak, Carine Ladner, Eric Ollier, Philippe Andreucci, Éric Colinet, Pierre Puget:
High performance NEMS devices for sensing applications. ESSDERC 2015: 31-35 - [c5]Issam Ouerghi, Willy Ludurczak, Laurent Duraffourg, Carine Ladner, Anouar Idrissi-El Oudrhiri, Patrice Gergaud, Maud Vinet, Thomas Ernst:
Piezoresistive transduction optimization of p-doped poly-Silicon NEMS. ESSDERC 2015: 149-152 - 2013
- [c4]Olivier Martin, Éric Colinet, Eric Sage, Cecilia Dupre, Patrick Villard, Sebastien Hentz, Laurent Duraffourg, Thomas Ernst:
Impact of process variability on a frequency-addressed NEMS array sensor used for gravimetric detection. ESSDERC 2013: 65-68 - [c3]R. Perenon, Eric Sage, Ali Mohammad-Djafari, Laurent Duraffourg, Sebastien Hentz, A. Brenac, Robert Morel, P. Grangeat:
Bayesian inversion of multi-mode NEMS mass spectrometry signal. EUSIPCO 2013: 1-5 - 2012
- [c2]Gregory Arndt, Cecilia Dupre, Julien Arcamone, Gerald Cibrario, Olivier Rozeau, Laurent Duraffourg, Eric Ollier, Éric Colinet:
Towards ultra-dense arrays of VHF NEMS with FDSOI-CMOS active pixels for sensing applications. ISSCC 2012: 320-322
2000 – 2009
- 2009
- [j1]Éric Colinet, Cedric Durand, Laurent Duraffourg, Patrick Audebert, Guillaume Dumas, Fabrice Casset, Eric Ollier, Pascal Ancey, Jean-François Carpentier, Lionel Buchaillot, Adrian M. Ionescu:
Ultra-Sensitive Capacitive Detection Based on SGMOSFET Compatible With Front-End CMOS Process. IEEE J. Solid State Circuits 44(1): 247-257 (2009) - 2008
- [c1]Éric Colinet, Cedric Durand, Patrick Audebert, Philippe Renaux, Denis Mercier, Laurent Duraffourg, Eric Ollier, Fabrice Casset, Pascal Ancey, Lionel Buchaillot, Adrian M. Ionescu:
Measurement of Nano-Displacement Based on In-Plane Suspended-Gate MOSFET Detection Compatible with a Front-End CMOS Process. ISSCC 2008: 332-333
Coauthor Index
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