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2006
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L. Harmatha, Milan Tapajna, V. Slugen, P. Ballo, P. Písecný, J. Sik, G. Kögel:
Czochralski-grown nitrogen-doped silicon: Electrical properties of MOS structures; A positron annihilation study. Microelectron. J. 37(4): 283-289 (2006)

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