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ORCIDMicroelectronics Journal, Volume 37
Volume 37, Number 1, January 2006
- Mnawer Souissi
, Zied Chine, A. Bchetnia, H. Touati, Belgacem El Jani:
Photoluminescence of V-doped GaN thin films grown by MOVPE technique. 1-4 - Cheng Luo, Fang Meng, Xinchuan Liu, Yiyun Guo:
Reinforcement of a PDMS master using an oxide-coated silicon plate. 5-11 - H. Rodríguez-Coppola, Joaquín Tutor-Sánchez, Victor R. Velasco:
Optical properties of (001) GaN/AlN quantum wells. 12-18 - Oleg Maksimov, Martin Muñoz, M. C. Tamargo:
Luminescent properties of BexCd1-xSe thin films. 19-21 - S. Kal, Soumen K. Das, D. K. Maurya, Kanishka Biswas, Adepu Ravi Sankar, S. K. Lahiri:
CMOS compatible bulk micromachined silicon piezoresistive accelerometer with low off-axis sensitivity. 22-30 - Salvador Pinillos Gimenez, Marcelo Antonio Pavanello, João Antonio Martino, Denis Flandre:
Gain improvement in operational transconductance amplifiers using Graded-Channel SOI nMOSFETS. 31-37 - Yuan Tian, Hong Wang:
Analysis of DC characteristics of GaAs double heterojunction bipolar transistors (DHBTs) with a pseudomorphic GaAsSb base. 38-43 - Chuan Jie Zhong, Hiroaki Tanaka, Shigetoshi Sugawa, Tadahiro Ohmi:
High quality silicon nitride deposited by Ar/N2/H2/SiH4 high-density and low energy plasma at low temperature. 44-49 - Xiaodong Wang, Baoqing Li, Onofrio L. Russo, Harry T. Roman, Ken K. Chin, Kenneth R. Farmer:
Diaphragm design guidelines and an optical pressure sensor based on MEMS technique. 50-56 - Ali Rostami, Ali Rahmani:
Two-dimensional optical mask design and atom lithography. 57-63 - Anna Maria Szekeres, T. Nikolova, S. Simeonov, A. Gushterov, F. Hamelmann, U. Heinzmann:
Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices. 64-70 - Ali Telli, Simsek Demir, Murat Askar:
CMOS planar spiral inductor modeling and low noise amplifier design. 71-78 - H. S. Ashour, A. I. Ass'ad, M. M. Shabat, Majdi S. Hamada:
Electronic conductance in binomially tailored quantum wire. 79-83 - Jinguang Jiang, Yaonan Wang:
Design of a tunable frequency CMOS fully differential fourth-order Chebyshev filter. 84-90
Volume 37, Number 2, February 2006
- G. E. Zardas, P. H. Yannakopoulos, M. Ziska, Chrys I. Symeonides, Marián Veselý, P. C. Euthymiou:
Temperature dependence of Si-GaAs energy gap using photoconductivity spectra. 91-93 - George T. Zardalidis, Ioannis Karafyllidis:
Design and simulation of a nanoelectronic single-electron Control - Not gate. 94-97 - Myoung-Seok Kim, Young-Don Ko, Tae-Houng Moon, Jae-Min Myoung, Ilgu Yun:
Modeling growth rate of HfO2 thin films grown by metal-organic molecular beam epitaxy. 98-106 - Z. W. Zhong, K. S. Goh:
Investigation of ultrasonic vibrations of wire-bonding capillaries. 107-113 - M. I. Vexler, A. El Hdiy, D. Grgec, S. E. Tyaginov, R. Khlil, Bernd Meinerzhagen, A. F. Shulekin, I. V. Grekhov:
Tunnel charge transport within silicon in reversely-biased MOS tunnel structures. 114-120 - Xiqiu Fan, Honghai Zhang, Sheng Liu, Xiaofeng Hu, Ke Jia:
NIL - a low-cost and high-throughput MEMS fabrication method compatible with IC manufacturing technology. 121-126 - M. Idrissi-Benzohra, M. Abdelaoui, M. Benzohra:
Effect of a magnetic field on the conduction mechanism in Silicon P+N junctions. 127-132 - Benoît Torbiéro, Marie-Laure Pourciel-Gouzy, Iryna Humenyuk, Jean-Baptiste Doucet, Augustin Martinez, Pierre Temple-Boyer:
Mass patterning of polysiloxane layers using spin coating and photolithography techniques. 133-136 - Marcelo Antonio Pavanello, Paula Ghedini Der Agopian, João Antonio Martino, Denis Flandre:
Cryogenic operation of graded-channel silicon-on-insulator nMOSFETs for high performance analog applications. 137-144 - Alberto Castellazzi, Martin Honsberg-Riedl, Gerhard K. M. Wachutka:
Thermal characterisation of power devices during transient operation. 145-151 - Juliano Fujioka Mologni, Marco Antonio Robert Alves, Edmundo S. Braga:
Numerical study on performance of pyramidal and conical isotropic etched single emitters. 152-157 - Ahmed Rebey, W. Fathallah, B. El Jani:
In depth study of the compensation in annealed heavily carbon doped GaAs. 158-166 - Seong-Chan Bae, Sie-Young Choi:
Improvement of the field emission characteristics of an oxidized porous polysilicon using annealed Pt/Ti surface emitter electrode. 167-173 - Józef Kalisz, Zbigniew Jachna:
Metastability tests of flip-flops in programmable digital circuits. 174-180 - H. Souffi-Kebbati, Jean-Philippe Blonde, Francis Braun:
A new semi-flat architecture for high speed and reduced area CORDIC chip. 181-187
Volume 37, Number 3, March 2006
- Vitezslav Benda:
The quest for optimum construction and technology of power semiconductor devices. 189 - Federica Cappelluti, Fabrizio Bonani, Mauro Furno, Giovanni Ghione, R. Carta, L. Bellemo, C. Bocchiola, Luigi Merlin:
Physics-based mixed-mode reverse recovery modeling and optimization of Si PiN and MPS fast recovery diodes. 190-196 - Pavel Hazdra, V. Komarnitskyy:
Lifetime control in silicon power P-i-N diode by ion irradiation: Suppression of undesired leakage. 197-203 - Ralf Siemieniec, Hans-Joachim Schulze, Franz-Josef Niedernostheide, W. Südkamp, Josef Lutz:
Compensation and doping effects in heavily helium-radiated silicon for power device applications. 204-212 - M. Cerník:
Fast soft recovery thyristors with axial lifetime profile fabricated using iridium diffusion. 213-216 - Vitezslav Benda, M. Cerník, Václav Papez:
OCVD carrier lifetime in P+NN+ diode structures with axial carrier lifetime gradient. 217-222 - A. Bourennane, Marie Breil, Jean-Louis Sanchez, J. Jalade:
A vertical monolithical MOS thyristor bi-directional device. 223-230 - In-Hwan Ji, Byung-Chul Jeon, Young-Hwan Choi, Yearn-Ik Choi, Min-Koo Han:
A New Emitter Switched Thyristor (EST) employing Trench Segmented p-base. 231-235 - J. Vobecký, D. Kolesnikov:
The properties of aluminum, platinum silicide and copper based contacts for silicon high-power devices. 236-242 - Martin Knaipp, Jong Mun Park, Verena Vescoli:
Evolution of a CMOS Based Lateral High Voltage Technology Concept. 243-248 - C. Caramel, P. Austin, Jean-Louis Sanchez, E. Imbernon, Marie Breil:
Integrated IGBT short-circuit protection structure: Design and optimization. 249-256 - Isabelle Bertrand, Jean-Marie Dilhac, Philippe Renaud, Christian Ganibal:
Large area recrystallization of thick polysilicon films for low cost partial SOI power devices. 257-261 - Masayasu Ishiko, Masanori Usui, Takashi Ohuchi, Mikio Shirai:
Design concept for wire-bonding reliability improvement by optimizing position in power devices. 262-268 - B. Kojecký, Václav Papez, D. Sámal:
Conditions of temperature and time instability occurrence of reverse-biased semiconductor power devices. 269-274
Volume 37, Number 4, April 2006
- Hassan Hassan, Mohab Anis, Mohamed I. Elmasry:
Impact of technology scaling and process variations on RF CMOS devices. 275-282 - L. Harmatha, Milan Tapajna, V. Slugen, P. Ballo, P. Písecný, J. Sik, G. Kögel:
Czochralski-grown nitrogen-doped silicon: Electrical properties of MOS structures; A positron annihilation study. 283-289 - Mariana Pelissari Monteiro Aguiar Baroni, Reinaldo R. Rosa, A. Ferreira da Silva, I. Pepe, Lucimara S. Roman, F. M. Ramos, Rajeev Ahuja, C. Persson, E. Veje:
Modeling and gradient pattern analysis of irregular SFM structures of porous silicon. 290-294 - Z. W. Zhong, Z. F. Wang, Y. H. Tan:
Chemical mechanical polishing of polymeric materials for MEMS applications. 295-301 - S. Eliahou-Niv, R. Dahan, Gady Golan:
Design and analysis of a novel tunable optical filter. 302-307 - Marc Bigas, Enric Cabruja:
Characterisation of electroplated Sn/Ag solder bumps. 308-316 - Ling Li, Shibing Long, Congshun Wang, Wengang Wu, Yilong Hao, Ming Liu:
Modeling and simulation development of electron beam resist based on cellular automata. 317-320 - Kanishka Biswas, Soumen K. Das, D. K. Maurya, S. Kal, S. K. Lahiri:
Bulk micromachining of silicon in TMAH-based etchants for aluminum passivation and smooth surface. 321-327 - Y. D. Jhou, C. H. Chen, Shoou-Jinn Chang, Y. K. Su, P. C. Chang, P. C. Chen, H. Hung, C. L. Yu, S. M. Wang, M. H. Wu:
GaN MSM photodetectors with photo-CVD annealed Ni/Au electrodes. 328-331 - L. Sun, D. Y. Li, X. Y. Liu, R. Q. Han:
Feasible approach to the fabrication of asymmetric Schottky barrier MOSFETs by using the spacer technique. 332-335 - C. Touzi, F. Omnès, Tarek Boufaden, P. Gibart, B. El Jani:
Realisation of 'Solar Blind' AlGaN Photodetectors: Measured and calculated spectral response. 336-339 - Tomasz Zawada:
Simultaneous estimation of heat transfer coefficient and thermal conductivity with application to microelectronic materials. 340-352 - Parag K. Lala, B. Kiran Kumar, James Patrick Parkerson:
On self-healing digital system design. 353-362 - Nabil Sghaier, M'Hamed Trabelsi, Noureddine Yacoubi, Jean-Marie Bluet, Abdelkader Souifi, Gérard Guillot, Christophe Gaquière, J. C. DeJaeger:
Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates. 363-370 - Raúl Quintero, A. Cerdeira:
Circuit models for quasi-3D spice simulation of turn-on transients in four-layer power bipolar devices. 371-382
Volume 37, Number 5, May 2006
- Zunxian Yang, Xinxin Li:
Simulation and optimization on the squeeze-film damping of a novel high-g accelerometer. 383-387 - Abdellatif Bouzidi, Hasna Hamzaoui, Ahmed S. Bouazzi, Bahri Rezig:
Analytic computation of the photocurrent density in a n-6H-SiC/p-Si/n-Si/p-Si0.8Ge0.2 multilayer solar cell. 388-394 - Volodymyr Grimalsky, Edmundo Gutiérrez, Abel García, Svetlana V. Koshevaya:
Resonant excitation of microwave acoustic modes in n-GaAs film. 395-403 - Weihua Liu, Changchun Zhu, Cao Meng, Fanguang Zeng:
On the uniformity of field emission in screen printed CNT-cathodes: The effects of the cathode roughness. 404-408 - Paolo Cova, Roberto Menozzi, Marco Portesine:
Experimental and numerical study of the recovery softness and overvoltage dependence on p-i-n diode design. 409-416 - Kuan-Ting Liu, Y. K. Su, R. W. Chuang, S. J. Chang, Y. Horikoshi:
Electrical and surface composition properties of phosphorus implantation in Mg-doped GaN. 417-420 - Bruno Bêche, N. Pelletier, Etienne Gaviot, R. Hierle, Antoine Goullet, Jean-Pierre Landesman, J. Zyss:
Conception of optical integrated circuits on polymers. 421-427 - C. W. Huang, S. J. Chang, W. Wu, C. L. Wu, C. S. Chang:
A Ku band four-stage PHEMT 1W MMIC power amplifier. 428-432 - Marc Bigas, Enric Cabruja, Josep Forest, Joaquim Salvi:
Review of CMOS image sensors. 433-451 - Satyabrata Jit, Neti V. L. Narasimha Murty:
Analytical study of the photo-effects on common-source and common-drain microwave oscillators using high pinch-off n-GaAs MESFETs. 452-458 - Gady Golan, Alex Axelevitch:
Progress in vacuum photothermal processing (VPP). 459-473
Volume 37, Number 6, June 2006
- Iryna Humenyuk, Benoît Torbiéro, S. Assié-Souleille, David Colin, Xavier Dollat, Bernard Franc, Augustin Martinez, Pierre Temple-Boyer:
Development of pNH4-isfets microsensors for water analysis. 475-479 - Hariyadi Soetedjo, O. Mohd Nizam, Idris Sabtu, J. Mohd Sazli, Ashaari Yusof, Y. Mohd Razman, A. F. Awang Mat:
Current-voltage behavior of AlGaAs/InGaAs pHEMT structures and the effect of optical illumination. 480-482 - Daniel Hasko, Jaroslav Kovác, F. Uherek, Jaroslava Skriniarová, J. Jakabovic, L. Peternai:
Avalanche photodiode with sectional InGaAsP/InP charge layer. 483-486 - Loránt Peternai, Jaroslav Kovác, Gert Irmer, Stanislav Hasenöhrl, Jozef Novák, Rudolf Srnánek:
Investigation of graded InxGa1-xP buffer by Raman scattering method. 487-490 - H. Dakhlaoui, S. Jaziri:
Spin polarization in multilayer ferromagnetic semiconductor. 491-494 - Fanguang Zeng, Chang-Chun Zhu, Weihua Liu, Xinghui Liu:
The fabrication and operation of fully printed Carbon nanotube field emission displays. 495-499 - N. G. Shankar, Z. W. Zhong:
A rule-based computing approach for the segmentation of semiconductor defects. 500-509 - Janaina Gonçalves Guimarães, L. M. Nóbrega, José Camargo da Costa:
Design of a Hamming neural network based on single-electron tunneling devices. 510-518 - Kanishka Biswas, S. Kal:
Etch characteristics of KOH, TMAH and dual doped TMAH for bulk micromachining of silicon. 519-525 - Oleg Semenov, Hossein Sarbishaei, Valery Axelrad, Manoj Sachdev:
Novel gate and substrate triggering techniques for deep sub-micron ESD protection devices. 526-533 - Yanli Zhao:
Experimental investigation on nonlinearities of PIN photodiodes. 534-536 - Deepanjan Datta, A. Ananda Prasad Sarab, Sudeb Dasgupta:
Two-dimensional numerical modeling of lightly doped nano-scale double-gate MOSFET. 537-545 - Marin Nedelchev, Dobri Dobrev:
Low sensitivity symmetrical response microwave filters. 546-553 - Michalis D. Galanis, Athanasios Milidonis, Athanasios Kakarountas, Costas E. Goutis:
A design flow for speeding-up dsp applications in heterogeneous reconfigurable systems. 554-564
Volume 37, Number 7, July 2006
- Chao-Ming Lin, Win-Jin Chang, Te-Hua Fang:
Reliability analysis of the fine pitch connection using anisotropic conductive film (ACF). 565-568 - Fei Zhang, Lina Shi, Wen Yu, Chengfang Li, Xiaowei Sun:
Novel buffer engineering: A concept for fast switching and low loss operation of planar IGBT. 569-573 - Wanjun Chen, Bo Zhang, Zhaoji Li:
A novel double RESURF LDMOS and a versatile JFET device used as internal power supply and current detector for SPIC. 574-578 - Hasina F. Huq, Syed K. Islam:
AlGaN/GaN self-aligned MODFET with metal oxide gate for millimeter wave application. 579-582 - Junxue Ran, Xiaoliang Wang, Guoxin Hu, Junxi Wang, Jianping Li, Cuimei Wang, Yiping Zeng, Jinmin Li:
Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD. 583-585 - L. Bouzrara, R. Ajjel, H. Mejri, M. A. Zaïdi, Hichem Maaref:
Alloy splitting of Te-DX in AlxGa1-xAs analysis using the deep level transient spectroscopy technique. 586-590 - Stephan Kronholz, Silvia Karthäuser, A. van der Hart, T. Wandlowski, Rainer Waser:
Metallic nanogaps with access windows for liquid based systems. 591-594 - Yuan Tian, Hong Wang:
Temperature dependence of DC characteristics of NpN InP/GaAsSb/InP double heterojunction bipolar transistors: an analytical study. 595-600 - Milene Galeti, Marcelo Antonio Pavanello, João Antonio Martino:
Evaluation of graded-channel SOI MOSFET operation at high temperatures. 601-607 - Kah-Yoong Chan, Teck-Yong Tou, Bee-San Teo:
Thickness dependence of the structural and electrical properties of copper films deposited by dc magnetron sputtering technique. 608-612 - Weida Hu, Xiaoshuang Chen, Xuchang Zhou, Zhijue Quan, Wei Lu:
Quantum-mechanical effects and gate leakage current of nanoscale n-type FinFETs: A 2d simulation study. 613-619 - Sneha Kabra, Harsupreet Kaur, Ritesh Gupta, Subhasis Haldar, Mridula Gupta, R. S. Gupta:
A semi empirical approach for submicron GaN MESFET using an accurate velocity field relationship for high power applications. 620-626 - Giuseppe de Vita, F. Bellatalla, Giuseppe Iannaccone:
Ultra-low power PSK backscatter modulator for UHF and microwave RFID transponders. 627-629 - Jean-François Eloy, Michel Depeyrot:
Nanometer range: A new theoretical challenge for microelectronics and optoelectronics. 630-634 - A. Benfdila, Francis Balestra:
On the drain current saturation in short channel MOSFETs. 635-641 - R. Kinder, A. Vincze, M. Kuruc, R. Srnánek, B. Lojek, B. Sopko, D. Chren:
Investigation of the implanted phosphorus in a boron doped SiGe epitaxial layer. 642-645 - Emmanuel M. Drakakis:
Systematic derivation of explicit design formulae for log-domain: A 3rd-order lowpass example. 646-656 - Clóves G. Rodrigues:
Electron mobility in n-doped zinc sulphide. 657-660 - Zhilin Sun, Weifeng Sun, Longxing Shi:
A review of safe operation area. 661-667
Volume 37, Number 8, August 2006
- Amara Amara, Frédéric Amiel, Thomas Ea:
FPGA vs. ASIC for low power applications. 669-677 - Shao-You Deng, Chang-Han Wu, Joseph Ya-min Lee:
Hydrogen-induced transient effect in carbon-doped InGaP hetero-junction bipolar transistors. 678-680 - Paula Ghedini Der Agopian, João Antonio Martino, Eddy Simoen, Cor Claeys:
Impact of the twin-gate structure on the linear kink effect in PD SOI nMOSFETS. 681-685 - C. Persson, C. L. Dong, Lionel Vayssieres, Andreas Augustsson, T. Schmitt, Maurizio Mattesini, Rajeev Ahuja, J. Nordgren, Ching-Lin Chang, A. Ferreira da Silva:
X-ray absorption and emission spectroscopy of ZnO nanoparticle and highly oriented ZnO microrod arrays. 686-689 - H. Dakhlaoui, S. Jaziri:
Spin-dependent transmission of holes in III-V diluted magnetic semiconductor based heterostructure. 690-694 - Biswajit Das, Christopher Garman:
Capacitance-voltage characterization of thin film nanoporous alumina templates. 695-699 - Aiguang Ren, Xiaomin Ren, Qi Wang, Deping Xiong, Hui Huang, Yongqing Huang:
Heteroepitaxy of In0.53Ga0.47As on GaAs substrate by low pressure metalorganic chemical vapor deposition for the OEIC applications. 700-704 - Rashed Adnan Islam, Y. C. Chan, W. Jillek, Samia Islam:
Comparative study of wetting behavior and mechanical properties (microhardness) of Sn-Zn and Sn-Pb solders. 705-713 - Su Zhan, Xie Ying-ge, Li Xia, Yu Tao:
Organic light-emitting devices with a 2-(4-biphenyl)-5-(4-butylphenyl)-1, 3, 4-oxadiazole layer between the alpha-naphtylphenyliphenyl diamine and 8-hydroxyquinoline aluminum. 714-717 - Abel García, Volodymyr Grimalsky, Edmundo Gutiérrez:
Two-dimensional simulations of amplification of space charge waves in a strained Si/SiGe heterostructure at 77K. 718-721 - Te-Hua Fang, Win-Jin Chang, Jun-Wei Chiu:
Study on coalescent properties of ZnO nanoclusters using molecular dynamics simulation and experiment. 722-727 - Janusz Zarebski, Krzysztof Górecki:
The electrothermal macromodel of voltage mode PWM controllers for SPICE. 728-734 - S. Shrestha, Chandan Kumar Sarkar:
Comparative studies on electronic transport due to the reduced dimensionality at the heterojunctions of GaAs/A1xGa(1-x)As and GaxIn(1-x)As/InP systems at low temperatures. 735-741 - Haiyan Gao, Guiguang Xiong, Xiaobo Feng:
Quantum-confined Stark shift in electroreflectance of a cylindrical GaN quantum dot. 742-745