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ORCIDRishu Chaujar
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2020 – today
- 2023
[j12]Bhavya Kumar
, Megha Sharma, Rishu Chaujar:
Gate electrode work function engineered JAM-GS-GAA FinFET for analog/RF applications: Performance estimation and optimization. Microelectron. J. 135: 105766 (2023)- [j11]Bhavya Kumar, Megha Sharma, Rishu Chaujar:
Junctionless-accumulation-mode stacked gate GAA FinFET with dual-k spacer for reliable RFIC design. Microelectron. J. 139: 105910 (2023) - 2022
- [j10]Mridul Prakash Kashyap, Harshal Gudaghe, Rishu Chaujar:
Compatibility of a Truncated Fin-FinFET as a k-modulated Biosensor with Optimum parameters for Pre-emptive Diagnosis of Diseases. Comput. Electr. Eng. 100: 107850 (2022) - [j9]Samriti Sharma, Rishu Chaujar:
Impact of tunnel gate process variations on analog/radio frequency (microwave) and small signal parameters of hetero-material tunneling interfaced charge plasma junctionless tunnel field effect transistor. Int. J. Circuit Theory Appl. 50(10): 3626-3641 (2022) - 2020
- [j8]Ardaman Kaur, Rishu Chaujar, Vijayakumar Chinnadurai:
Effects of Neural Mechanisms of Pretask Resting EEG Alpha Information on Situational Awareness: A Functional Connectivity Approach. Hum. Factors 62(7) (2020) - [j7]Pranav M. Tripathi, Harshit Soni, Rishu Chaujar, Ajay Kumar:
Numerical simulation and parametric assessment of GaN buffered trench gate MOSFET for low power applications. IET Circuits Devices Syst. 14(6): 915-922 (2020) - [c5]M. Aditya, Rishu Chaujar:
A Novel GAA Hollow Cavity FinFET based biosensor for Cancer protein marker sensing. MOCAST 2020: 1-4
2010 – 2019
- 2019
- [c4]Ajay Kumar, Neha Gupta, Madan Mohan Tripathi, Rishu Chaujar:
Non-Quasi-Static Small-Signal Modeling of TGRC MOSFET in Parameter Perspective for RF/Microwave Applications. MOCAST 2019: 1-4 - [c3]Ajay Kumar, Neha Gupta, Samarth Singh, Balark Tiwari, Madan Mohan Tripathi, Rishu Chaujar:
Carbon Nanotube Recessed Channel (CNT-RC) MOSFET for High Linearity/ULSI Applications. TENCON 2019: 2564-2567 - 2018
- [c2]Ajay Kumar, Samarth Singh, Balark Tiwari, Rishu Chaujar:
Temperature Reliability of Junctionless Twin Gate Recessed Channel (JL-TGRC) MOSFET with Different Gate Material for Low Power Digital-Logic Applications. TENCON 2018: 1070-1074 - 2016
- [j6]Ajay Kumar, Neha Gupta, Rishu Chaujar:
TCAD RF performance investigation of Transparent Gate Recessed Channel MOSFET. Microelectron. J. 49: 36-42 (2016) - [j5]Neha Gupta, Rishu Chaujar:
Investigation of temperature variations on analog/RF and linearity performance of stacked gate GEWE-SiNW MOSFET for improved device reliability. Microelectron. Reliab. 64: 235-241 (2016) - 2014
- [c1]Neha Gupta, Ajay Kumar, Rishu Chaujar:
Impact of Channel Doping and Gate Length on Small Signal Behaviour of Gate Electrode Workfunction Engineered Silicon Nanowire MOSFET at THz Frequency. ISED 2014: 192-196 - 2012
- [j4]Priyanka Malik, R. S. Gupta, Rishu Chaujar, Mridula Gupta:
AC analysis of nanoscale GME-TRC MOSFET for microwave and RF applications. Microelectron. Reliab. 52(1): 151-158 (2012) - 2011
- [j3]Sona P. Kumar, Anju Agrawal, Rishu Chaujar, R. S. Gupta, Mridula Gupta:
Device linearity and intermodulation distortion comparison of dual material gate and conventional AlGaN/GaN high electron mobility transistor. Microelectron. Reliab. 51(3): 587-596 (2011)
2000 – 2009
- 2008
- [j2]Sona P. Kumar, Anju Agrawal, Rishu Chaujar, Mridula Gupta, R. S. Gupta:
Performance assessment and sub-threshold analysis of gate material engineered AlGaN/GaN HEMT for enhanced carrier transport efficiency. Microelectron. J. 39(12): 1416-1424 (2008) - 2007
- [j1]Sona P. Kumar, Anju Agrawal, Rishu Chaujar, Sneha Kabra, Mridula Gupta, R. S. Gupta:
Threshold voltage model for small geometry AlGaN/GaN HEMTs based on analytical solution of 3-D Poisson's equation. Microelectron. J. 38(10-11): 1013-1020 (2007)
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