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Hans-Dieter Wohlmuth
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2010 – 2019
- 2012
- [j5]Marc Tiebout, Hans-Dieter Wohlmuth, Herbert Knapp, Raffaele Salerno, Michael Druml, Mirjana Rest, Johann Kaeferboeck, Johann Wuertele, Sherif Sayed Ahmed, Andreas Schiessl, Ralf Juenemann, Anna Zielska:
Low Power Wideband Receiver and Transmitter Chipset for mm-Wave Imaging in SiGe Bipolar Technology. IEEE J. Solid State Circuits 47(5): 1175-1184 (2012)
2000 – 2009
- 2005
- [c6]Hans-Dieter Wohlmuth, Daniel Kehrer:
A 24 GHz dual-modulus prescaler in 90nm CMOS. ISCAS (4) 2005: 3227-3230 - 2004
- [j4]Daniel Kehrer, Hans-Dieter Wohlmuth:
A 30-gb/s 70-mW one-stage 4: 1 multiplexer in 0.13-μm CMOS. IEEE J. Solid State Circuits 39(7): 1140-1147 (2004) - [c5]Hans-Dieter Wohlmuth, Daniel Kehrer:
A low power 13-Gb/s 2^7-1 pseudo random bit sequence generator IC in 120 nm bulk CMOS. SBCCI 2004: 233-236 - 2003
- [j3]Daniel Kehrer, Hans-Dieter Wohlmuth, Herbert Knapp, Martin Wurzer, Arpad L. Scholtz:
40-Gb/s 2: 1 multiplexer and 1: 2 demultiplexer in 120-nm standard CMOS. IEEE J. Solid State Circuits 38(11): 1830-1837 (2003) - [c4]Hans-Dieter Wohlmuth, Daniel Kehrer:
A 15 GHz 256/257 dual-modulus prescaler in 120 nm CMOS. ESSCIRC 2003: 77-80 - [c3]Daniel Kehrer, Hans-Dieter Wohlmuth:
A 20 Gb/s 82mW one-stage 4:1 multiplexer in 0.13 μm CMOS. ESSCIRC 2003: 385-388 - 2002
- [c2]Winfried Bakalski, Werner Simbürger, Daniel Kehrer, Hans-Dieter Wohlmuth, Mirjana Rest, Arpad L. Scholtz:
A monolithic 2.45 GHz, 0.56 W power amplifier with 45% PAE at 2.4 V in standard 25 GHz fT Si-bipolar. ISCAS (4) 2002: 803-806 - 2001
- [j2]Hans-Dieter Wohlmuth, Werner Simbürger:
A high-IP3 RF receiver chip set for mobile radio base stations up to 2 GHz. IEEE J. Solid State Circuits 36(7): 1132-1137 (2001) - [c1]Daniel Kehrer, Werner Simbürger, Hans-Dieter Wohlmuth, Arpad L. Scholtz:
Modeling of monolithic lumped planar transformers up to 20 GHz. CICC 2001: 401-404
1990 – 1999
- 1999
- [j1]Werner Simbürger, Hans-Dieter Wohlmuth, Peter Weger, Alexander Heinz:
A monolithic transformer coupled 5-W silicon power amplifier with 59% PAE at 0.9 GHz. IEEE J. Solid State Circuits 34(12): 1881-1892 (1999)
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