"Single event effects and total ionising dose in 600V Si-on-SiC LDMOS ..."

K. Ben Ali et al. (2017)

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DOI: 10.1109/ESSDERC.2017.8066635

access: closed

type: Conference or Workshop Paper

metadata version: 2021-10-14

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K. Ben Ali, P. M. Gammon, C. W. Chan, F. Li, V. Pathirana, T. Trajkovic, Farzan Gity, Denis Flandre, Valeria Kilchytska:
Single event effects and total ionising dose in 600V Si-on-SiC LDMOS transistors for rad-hard space applications. ESSDERC 2017: 236-239

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