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47th ESSDERC 2017: Leuven, Belgium
- 47th European Solid-State Device Research Conference, ESSDERC 2017, Leuven, Belgium, September 11-14, 2017. IEEE 2017, ISBN 978-1-5090-5978-2
- Ian A. Young, Dmitri E. Nikonov
:
Principles and trends in quantum nano-electronics and nano-magnetics for beyond-CMOS computing. 1-5 - Chihiro Matsui, Ken Takeuchi:
22% Higher performance, 2x SCM write endurance heterogeneous storage with dual storage class memory and NAND flash. 6-9 - Takashi Inose, Seiichi Aritome, Ryutaro Yasuhara, Satoshi Mishima, Ken Takeuchi:
Study of error repeatability and recovery in 40nm TaOx ReRAM. 10-13 - Shan Wang, Huaqiang Wu, Bin Gao, Ning Deng, Dong Wu, He Qian:
Optimization of writing scheme on 1T1R RRAM to achieve both high speed and good uniformity. 14-17 - Rui Liu, Heng-Yuan Lee, Shimeng Yu
:
Analyzing inference robustness of RRAM synaptic array in low-precision neural network. 18-21 - Colin C. McAndrew:
SPICE modeling in Verilog-A: Successes and challenges: Invited paper. 22-25 - Chiara Rossi
, Pietro Buccella, Camillo Stefanucci, Jean-Michel Sallese:
SPICE modeling of light induced current in silicon with 'Generalized' lumped devices. 26-29 - C.-M. Zhang, Farzan Jazaeri, Alessandro Pezzotta, Claudio Bruschini
, Giulio Borghello, S. Mattiazzo, Andrea Baschirotto, Christian C. Enz:
Total ionizing dose effects on analog performance of 28 nm bulk MOSFETs. 30-33 - Chhandak Mukherjee
, Cristell Maneux
, Julien Pezard, Guilhem Larrieu
:
1/f Noise in 3D vertical gate-all-around junction-less silicon nanowire transistors. 34-37 - Markus Hellenbrand
, Elvedin Memisevic
, Johannes Svensson, Erik Lind
, Lars-Erik Wernersson
:
Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade. 38-41 - Gia Vinh Luong, Sebastiano Strangio
, Andreas T. Tiedemann, Patric Bernardy, Stefan Trellenkamp, Pierpaolo Palestri, Siegfried Mantl, Qing-Tai Zhao
:
Experimental characterization of the static noise margins of strained silicon complementary tunnel-FET SRAM. 42-45 - Benoit Sklénard
, Philippe Blaise, Boubacar Traore, Alberto Dragoni, Cecile Nail, Elisa Vianello:
Advances in the understanding of microscopic switching mechanisms in ReRAM devices (Invited paper). 46-49 - Saurabh Sant, Andreas Schenk:
Modeling the effect of surface roughness on the performance of line tunnel FETs. 50-53 - Tarun Agarwal, Bart Soree
, Iuliana P. Radu
, Praveen Raghavan, Gianluca Fiori, Marc M. Heyns, Wim Dehaene:
Material selection and device design guidelines for two-dimensional materials based TFETs. 54-57 - Rosario M. Incandela, Lin Song, Harald A. R. Homulle
, Fabio Sebastiano
, Edoardo Charbon, Andrei Vladimirescu:
Nanometer CMOS characterization and compact modeling at deep-cryogenic temperatures. 58-61 - Arnout Beckers
, Farzan Jazaeri, Andrea Ruffino
, Claudio Bruschini
, Andrea Baschirotto, Christian C. Enz:
Cryogenic characterization of 28 nm bulk CMOS technology for quantum computing. 62-65 - Renan Trevisoli Doria
, Rodrigo Trevisoli Doria, Michelly de Souza
, Marcelo Antonio Pavanello, Sylvain Barraud:
A new method for junctionless transistors parameters extraction. 66-69 - Mathieu Jaoul
, Didier Céli, Cristell Maneux
, Michael Schröter, Andreas Pawlak:
Avalanche compact model featuring SiGe HBTs characteristics up to BVcbo. 70-73 - Gina C. Adam
, Hussein Nili
, Jeeson Kim
, Brian D. Hoskins
, Omid Kavehei
, Dmitri B. Strukov
:
Utilizing I-V non-linearity and analog state variations in ReRAM-based security primitives. 74-77 - Ali Saeidi, Farzan Jazaeri, Francesco Bellando, Igor Stolichnov
, Christian C. Enz, Adrian M. Ionescu:
Negative capacitance field effect transistors; capacitance matching and non-hysteretic operation. 78-81 - Thomas Grap, Felix Riederer, Charu Gupta
, Joachim Knoch
:
Buried multi-gate InAs-nanowire FETs. 82-85 - Enrique Miranda
, Jordi Suñé
, Chengbin Pan, Marco A. Villena, Na Xiao, Mario Lanza:
Equivalent circuit model for the electron transport in 2D resistive switching material systems. 86-89 - Igor Bejenari, Michael Schröter, Martin Claus:
Analytical drain current model for non-ballistic Schottky-Barrier CNTFETs. 90-93 - Meshal Alawein
, Hossein Fariborzi
:
A general circuit model for spintronic devices under electric and magnetic fields. 94-97 - Matteo Ghittorelli
, Fabrizio Torricelli, Carmine Garripoli, Jan-Laurens P. J. van der Steen, Gerwin H. Gelinck, Sahel Abdinia, Eugenio Cantatore, Zsolt Miklós Kovács-Vajna:
Compact physical model of a-IGZO TFTs for circuit simulation. 98-101 - Nicolo Oliva, Emanuele A. Casu, Wolfgang A. Vitale, Igor Stolichnov
, Adrian M. Ionescu:
Complementary black phosphorous FETs by workfunction engineering of pre-patterned Au and Ag embedded electrodes. 102-105 - Yashwanth Balaji
, Quentin Smets, Cesar J. Lockhart de la Rosa, Anh Khoa Augustin Lu
, Daniele Chiappe, Tarun Agarwal, Dennis Lin, Cedric Huyghebaert, Iuliana P. Radu
, Dan Mocuta, Guido Groeseneken
:
Tunneling transistors based on MoS2/MoTe2 Van der Waals heterostructures. 106-109 - Amit Gahoi, Satender Kataria, Max Christian Lemme
:
Temperature dependence of contact resistance for gold-graphene contacts. 110-113 - Takamasa Kawanago, Ryo Ikoma, Tomoaki Oba, Hiroyuki Takagi:
Radical oxidation process for hybrid SAM/HfOx gate dielectrics in MoS2 FETs. 114-117 - Roland Rupp:
CoolSiC™ and major trends in SiC power device development. 118-121 - B. Gunnar Malm, Hossein Elahipanah, Arash Salemi, Mikael Östling
:
Gated base structure for improved current gain in SiC bipolar technology. 122-125 - William Vandendaele, Thomas Lorin, Romain Gwoziecki, Yannick Baines, Jérome Biscarrat, Marie-Anne Jaud, Charlotte Gillot, Matthew Charles
, Marc Plissonnier, Gilles Reimbold:
On the understanding of cathode related trapping effects in GaN-on-Si Schottky diodes. 126-129 - Arno Stockman, Michael J. Uren
, Alaleh Tajalli, Matteo Meneghini
, Benoit Bakeroot, Peter Moens:
Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron. 130-133 - Tanya Nigam, Andreas Kerber, Tian Shen, Rakesh Ranjan, Linjun Cao:
Material and device innovation impact on reliability for scaled CMOS technologies. 134-139 - Kyung Hwa Lee, Maryline Bawedin, Hyungjin Park, Mukta Singh Parihar, Sorin Cristoloveanu:
Carrier lifetime evaluation in FD-SOI layers. 140-143 - Jessy Micout, Quentin Rafhay, Xavier Garros, Mikaël Cassé, Jean Coignus
, Luca Pasini, Cao-Minh Vincent Lu, Nils Rambal, Claire Fenouillet-Béranger, Laurent Brunet, G. Romano, R. Gassilloud, Perrine Batude, Maud Vinet, Gérard Ghibaudo
:
Precise EOT regrowth extraction enabling performance analysis of low temperature extension first devices. 144-147 - B. Kazemi Esfeh, Valeria Kilchytska
, Bertrand Parvais, Nicolas Planes, M. Haond, Denis Flandre
, Jean-Pierre Raskin:
Back-gate bias effect on UTBB-FDSOI non-linearity performance. 148-151 - B. Attarimashalkoubeh, Jury Sandrini, Elmira Shahrabi, Yusuf Leblebici:
Evolution of oxygen vacancies under electrical characterization for HfOx-based ReRAMs. 152-155 - Giorgio Servalli:
Emerging memory technologies for high density applications. 156-159 - Milan Pesic, Michael Hoffmann, Claudia Richter, Stefan Slesazeck, Thomas Kämpfe
, Lukas M. Eng
, Thomas Mikolajick
, Uwe Schroeder
:
Anti-ferroelectric ZrO2, an enabler for low power non-volatile 1T-1C and 1T random access memories. 160-163 - Karine Florent, Simone Lavizzari, Luca Di Piazza, Mihaela Ioana Popovici, Goedele Potoms, Tom Raymaekers, Guido Groeseneken
, Jan Van Houdt:
From planar to vertical capacitors: A step towards ferroelectric V-FeFET integration. 164-167 - Naga Sruti Avasarala, Bogdan Govoreanu, Karl Opsomer, Wouter Devulder
, Sergiu Clima, Christophe Detavernier, Marleen van der Veen, Jan Van Houdt, Marc Henys, Ludovic Goux, Gouri Sankar Kar:
Doped GeSe materials for selector applications. 168-171 - Behzad Zeinali
, Mahsa Esmaeili, Jens Kargaard Madsen, Farshad Moradi
:
Multilevel SOT-MRAM cell with a novel sensing scheme for high-density memory applications. 172-175 - Fabian M. Bufler, Kenichi Miyaguchi, Thomas Chiarella, N. Horiguchi, Anda Mocuta:
On the ballistic ratio in 14nm-Node FinFETs. 176-179 - Luca Donetti, Carlos Sampedro
, Francisco Javier García Ruiz
, Andres Godoy
, Francisco Gámiz
:
Three-dimensional multi-subband simulation of scaled FinFETs. 180-183 - Muhammad A. Elmessary
, Daniel Nagy
, Manuel Aldegunde, Antonio J. García-Loureiro
, Karol Kalna
:
Study of strained effects in nanoscale GAA nanowire FETs using 3D Monte Carlo simulations. 184-187 - Jeffrey A. Smith, Kai Ni, Ram Krishna Ghosh, Jeff Xu, Mustafa Badaroglu, P. R. Chidi Chidambaram, Suman Datta
:
Investigation of electrically gate-all-around hexagonal nanowire FET (HexFET) architecture for 5 nm node logic and SRAM applications. 188-191 - Mitiko Miura-Mattausch, Hidenori Miyamoto, Hideyuki Kikuchihara, Dondee Navarro, Tapas K. Maiti
, Nezam Rohbani, C. Ma, Hans Jürgen Mattausch, A. Schiffmann, Alexander Steinmair, Ehrenfried Seebacher:
Modeling of dynamic trap density increase for aging simulation of any MOSFET circuits. 192-195 - Muhammad Alshahed, M. Dakran, Lars Heuken, Mohammed Alomari, Joachim N. Burghartz:
Comprehensive compact electro-thermal GaN HEMT model. 196-199 - Apoorva Ojha, Nihar R. Mohapatra:
Trap-assisted carrier transport through the multi-stack gate dielectrics of HKMG nMOS transistors: A compact model. 200-203 - Francesco Maria Puglisi
, Nicolo Zagni
, Luca Larcher, Paolo Pavan
:
A new verilog-A compact model of random telegraph noise in oxide-based RRAM for advanced circuit design. 204-207 - Francesco Bonaccorso:
Ink-jet printed 2D crystal heterostructures. 208-211 - Tom Schram, Quentin Smets, Benjamin Groven
, M. H. Heyne, E. Kunnen, A. Thiam, Katia Devriendt, Annelies Delabie, Dennis Lin, M. Lux, Daniele Chiappe, I. Asselberghs
, S. Brus, Cedric Huyghebaert, S. Sayan, A. Juncker, Matty Caymax, Iuliana P. Radu
:
WS2 transistors on 300 mm wafers with BEOL compatibility. 212-215 - Mesut Inac, Grzegorz Lupina, Matthias Wietstruck, Marco Lisker, Mirko Fraschke, Andreas Mai
, Fabio Coccetti, Mehmet Kaynak:
200 mm Wafer level graphene transfer by wafer bonding technique. 216-219 - Sung-Kun Park, Donghyun Woo, Min-Ki Na, Pyong-Su Kwag, Ho-Ryeong Lee, Kyoung-Wook Ro, Kyung-Hwan Kim, Dong-Kyu Lee, Chris Hong, In-Wook Cho, Kyung-Dong Yoo:
Epitaxial growth and diffusion characteristics analysis of vertical thin poly-Si channel transfer gate structured pixels for 3D CMOS image sensor. 220-223 - Wouter Diels, Michiel Steyaert
, Filip Tavernier:
Modelling, design and characterization of Schottky diodes in 28nm bulk CMOS for 850/1310/1550nm fully integrated optical receivers. 224-227 - R. Pecheux, R. Kabouche, E. Dogmus, A. Linge, E. Okada, M. Zegaoui, F. Medjdoub:
Importance of buffer configuration in GaN HEMTs for high microwave performance and robustness. 228-231 - Emanuele A. Casu, Wolfgang A. Vitale, Michele Tamagnone, Mariazel Maqueda Lopez, Nicolo Oliva, Anna Krammer, Andreas Schuler, Montserrat Fernandez-Bolaños, Adrian M. Ionescu:
Shunt capacitive switches based on VO2 metal insulator transition for RF phase shifter applications. 232-235 - K. Ben Ali, P. M. Gammon, C. W. Chan, F. Li, V. Pathirana, T. Trajkovic, Farzan Gity
, Denis Flandre
, Valeria Kilchytska
:
Single event effects and total ionising dose in 600V Si-on-SiC LDMOS transistors for rad-hard space applications. 236-239 - Mustafa Badaroglu, Jeff Xu, John Zhu, Da Yang, Jerry Bao, Seung Chul Song, Peijie Feng, Romain Ritzenthaler, Hans Mertens, Geert Eneman, Naoto Horiguchi, Jeffrey Smith, Suman Datta
, David Kohen
, Po-Wen Chan, Keagan Chen, P. R. Chidi Chidambaram:
PPAC scaling enablement for 5nm mobile SoC technology. 240-243 - V. Deshpande, Herwig Hahn
, V. Djara, E. O'Connor, Daniele Caimi, Marilyne Sousa, Jean Fompeyrine, L. Czornomaz:
Hybrid InGaAs/SiGe CMOS circuits with 2D and 3D monolithic integration. 244-247 - Mirko Scholz, Geert Hellings, Shih-Hung Chen, Dimitri Linten:
Tunable ESD clamp for high-voltage power I/O pins of a battery charge circuit in mobile applications. 248-251 - Claire Fenouillet-Béranger, S. Beaurepaire, Fabien Deprat, Alexandre Ayres De Sousa, Laurent Brunet, Perrine Batude, Olivier Rozeau, François Andrieu, Paul Besombes, M.-P. Samson, Bernard Previtali, F. Nemouchi, G. Rodriguez, Philippe Rodriguez
, R. Famulok, Nils Rambal, Viorel Balan, Z. Saghi, V. Jousseaume, Charles-Antoine Guérin, F. Ibars, F. Proud, D. Nouguier, David Ney, V. Delaye, H. Dansas, X. Federspiel, Maud Vinet:
Guidelines for intermediate back end of line (BEOL) for 3D sequential integration. 252-255 - Mohit Kumar Gupta, Pieter Weckx, Stefan Cosemans, Pieter Schuddinck, Rogier Baert, Dmitry Yakimets, Doyoung Jang, Yasser Sherazi, Praveen Raghavan, Alessio Spessot, Anda Mocuta, Wim Dehaene:
Device circuit and technology co-optimisation for FinFET based 6T SRAM cells beyond N7. 256-259 - Severine Le Gac:
Microfluidic technology: New opportunities to develop physiologically relevant in vitro models integrated microfluidic platform for the in vitro pre-implantation culture of individual mammalian embryos and their in situ characterization. 260-263 - Getenet Tesega Ayele, Stéphane Monfray, Frédéric Boeuf, Jean-Pierre Cloarec
, Serge Ecoffey
, Dominique Drouin, Etienne Puyoo, Abdelkader Souifi:
Development of ultrasensitive extended-gate Ion-sensitive-field-effect-transistor based on industrial UTBB FDSOI transistor. 264-267 - Qinghua Han, Anran Gao, Keyvan Narimani, Yuelin Wang, Tie Li, Siegfried Mantl, Qing-Tai Zhao
:
Ultrathin lateral unidirectional bipolar-type insulated-gate transistor as pH sensor. 268-271 - Andreas Hessel, Stefan Scholz, Alexander Pelger, Albert Pfander, Joachim Knoch
:
A novel approach for scalable sensor arrays using cantilever field-effect transistors. 272-275 - Nian Wang, Shih-Hung Chen, Geert Hellings, Kris Myny
, Soeren Steudel
, Mirko Scholz, Roman Boschke, Dimitri Linten, Guido Groeseneken
:
ESD characterisation of a-IGZO TFTs on Si and foil substrates. 276-279 - Guangrui Xia:
Dopant diffusion and segregation, Si-Ge interdiffusion and defect engineering in SiGe devices. 280-283 - Theresia Knobloch
, Gerhard Rzepa, Yury Yu. Illarionov
, Michael Waltl
, Franz Schanovsky, Markus Jech, Bernhard Stampfer, Marco M. Furchi, Thomas Muller, Tibor Grasser
:
Physical modeling of the hysteresis in M0S2 transistors. 284-287 - Gioele Mirabelli
, Farzan Gity
, Scott Monaghan, Paul K. Hurley, Ray Duffy
:
Impact of impurities, interface traps and contacts on MoS2 MOSFETs: Modelling and experiments. 288-291 - Eduard Cartier, Atreya Majumdar, K.-T. Lee, Takashi Ando, Martin M. Frank, John Rozen, Keith A. Jenkins, C. Liang, C.-W. Cheng, John Bruley, M. Hopstaken, Pranita Kerber, J.-B. Yau, X. Sun, Renee T. Mo, Chun-Chen Yeh, Effendi Leobandung, Vijay Narayanan
:
Electron mobility in thin In0.53Ga0.47As channel. 292-295 - Mengnan Ke, Mitsuru Takenaka, Shinichi Takagi:
Understanding of slow traps generation in plasma oxidation GeOx/Ge MOS interfaces with ALD high-k layers. 296-299 - Romain Ritzenthaler, Hans Mertens, An De Keersgieter, Jérôme Mitard, Dan Mocuta, N. Horiguchi:
Isolation of nanowires made on bulk wafers by ground plane doping. 300-303 - Dae-Young Jeon, Tim Baldauf, So Jeong Park, Sebastian Pregl, Larysa Baraban
, Gianaurelio Cuniberti
, Thomas Mikolajick
, Walter M. Weber
:
In-depth electrical characterization of carrier transport in ambipolar Si-NW Schottky-barrier FETs. 304-307

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