"TCAD low-field mobility model for InGaAs UTB MOSFETs including ..."

Stefania Carapezzi et al. (2016)

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DOI: 10.1109/ESSDERC.2016.7599674

access: closed

type: Conference or Workshop Paper

metadata version: 2019-10-19

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Stefania Carapezzi, Enrico Caruso, Antonio Gnudi, Susanna Reggiani, Elena Gnani:
TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections. ESSDERC 2016: 416-419

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