"Physical modeling of the hysteresis in M0S2 transistors."

Theresia Knobloch et al. (2017)

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DOI: 10.1109/ESSDERC.2017.8066647

access: closed

type: Conference or Workshop Paper

metadata version: 2021-10-14

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  - https://dblp.org/rec/conf/essderc/KnoblochRIWSJSF17
Theresia Knobloch, Gerhard Rzepa, Yury Yu. Illarionov, Michael Waltl, Franz Schanovsky, Markus Jech, Bernhard Stampfer, Marco M. Furchi, Thomas Muller, Tibor Grasser:
Physical modeling of the hysteresis in M0S2 transistors. ESSDERC 2017: 284-287

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