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"New reliability mechanisms in memory design for sub-22nm technologies."
Nivard Aymerich et al. (2011)
- Nivard Aymerich, A. Asenov, Andrew R. Brown, Ramon Canal, Binjie Cheng, Joan Figueras, Antonio González, Enric Herrero, S. Markov, Miguel Miranda, Peyman Pouyan, Tanausú Ramírez, Antonio Rubio, Elena I. Vatajelu, Xavier Vera, Xingsheng Wang, Paul Zuber:
New reliability mechanisms in memory design for sub-22nm technologies. IOLTS 2011: 111-114
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