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Asen Asenov
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2020 – today
- 2023
[i2]Preslav Aleksandrov, Ali Rezaei, Nikolas Xeni, Tapas Dutta, Asen Asenov, Vihar P. Georgiev:
Fully Convolutional Generative Machine Learning Method for Accelerating Non-Equilibrium Greens Function Simulations. CoRR abs/2309.09374 (2023)- 2022
- [j42]Rongmei Chen
, Lin Chen, Jie Liang, Yuanqing Cheng, Souhir Elloumi, Jaehyun Lee, Kangwei Xu, Vihar P. Georgiev, Kai Ni, Peter Debacker, Asen Asenov, Aida Todri-Sanial:
Carbon Nanotube SRAM in 5-nm Technology Node Design, Optimization, and Performance Evaluation - Part I: CNFET Transistor Optimization. IEEE Trans. Very Large Scale Integr. Syst. 30(4): 432-439 (2022) - [j41]Rongmei Chen, Lin Chen, Jie Liang, Yuanqing Cheng, Souhir Elloumi, Jaehyun Lee, Kangwei Xu, Vihar P. Georgiev, Kai Ni, Peter Debacker, Asen Asenov, Aida Todri-Sanial:
Carbon Nanotube SRAM in 5-nm Technology Node Design, Optimization, and Performance Evaluation - Part II: CNT Interconnect Optimization. IEEE Trans. Very Large Scale Integr. Syst. 30(4): 440-448 (2022) - 2021
- [c52]Tapas Dutta, Cristina Medina-Bailon, Ali Rezaei, Daniel Nagy, Fikru Adamu-Lema, Nikolas Xeni, Yassine Abourrig, Naveen Kumar, Vihar P. Georgiev, Asen Asenov:
TCAD Simulation of Novel Semiconductor Devices. ASICON 2021: 1-4
2010 – 2019
- 2019
- [c51]Toufik Sadi, Oves Badami, Vihar P. Georgiev, Jie Ding, Asen Asenov:
Advanced Simulation of RRAM Memory Cells. ASICON 2019: 1-4 - [c50]Cristina Medina-Bailon, Carlos Sampedro, José Luis Padilla, Luca Donetti, Vihar P. Georgiev, Francisco Gámiz, Asen Asenov:
Techniques for Statistical Enhancement in a 2D Multi-subband Ensemble Monte Carlo Nanodevice Simulator. LSSC 2019: 411-419 - [c49]Toufik Sadi, Oves Badami, Vihar P. Georgiev, Asen Asenov:
Kinetic Monte Carlo Analysis of the Operation and Reliability of Oxide Based RRAMs. LSSC 2019: 429-437 - [c48]Ryan W. Gardner, Corey Lowman, Casey Richardson, Ashley J. Llorens, Jared Markowitz, Nathan Drenkow, Andrew Newman, Gregory Clark, Gino Perrotta, Robert Perrotta, Timothy Highley, Vlad Shcherbina, William Bernadoni, Mark Jordan, Asen Asenov:
The First International Competition in Machine Reconnaissance Blind Chess. NeurIPS (Competition and Demos) 2019: 121-130 - 2018
- [j40]Mihail Nedjalkov, Paul Ellinghaus, Josef Weinbub, Toufik Sadi, Asen Asenov, Ivan Dimov, Siegfried Selberherr:
Stochastic analysis of surface roughness models in quantum wires. Comput. Phys. Commun. 228: 30-37 (2018) - [c47]Benjamin Uhlig, Jie Liang, Jaehyun Lee, Raphael Ramos, Abitha Dhavamani, Nicole Nagy, Jean Dijon, Hanako Okuno, Dipankar Kalita, Vihar P. Georgiev, Asen Asenov, Salvatore M. Amoroso, Liping Wang, Campbell Millar, F. Konemann, Bernd Gotsmann, Goncalo Goncalves, Bingan Chen, Reeturaj Pandey, R. Chen, Aida Todri-Sanial:
Progress on carbon nanotube BEOL interconnects. DATE 2018: 937-942 - [c46]Nedelcho Georgiev, Asen Asenov:
Automatic Segmentation of Lumbar Spine MRI Using Ensemble of 2D Algorithms. CSI@MICCAI 2018: 154-162 - [c45]Cristina Medina-Bailon, Toufik Sadi, Carlos Sampedro, José Luis Padilla, Luca Donetti, Vihar P. Georgiev, Francisco Gámiz, Asen Asenov:
Impact of the Trap Attributes on the Gate Leakage Mechanisms in a 2D MS-EMC Nanodevice Simulator. NMA 2018: 273-280 - [c44]Toufik Sadi, Asen Asenov:
Microscopic KMC Modeling of Oxide RRAMs. NMA 2018: 290-297 - 2017
- [j39]Milen Petrov, Asen Asenov, Adelina Aleksieva-Petrova:
Software Server for Automatic Generation of Audio Lectures (uListenSrv). Int. J. Adv. Corp. Learn. 10(1): 55-74 (2017) - [c43]Asen Asenov, Karim El Sayed, Ricardo Borges, Plamen Asenov, Campbell Millar, Terry Ma:
TCAD based Design-Technology Co-Optimisations in advanced technology nodes. VLSI-DAT 2017: 1-2 - 2016
- [j38]Asen Asenov, Ulf Schlichtmann, Cher Ming Tan, Hei Wong, Xing Zhou:
Editorial. Microelectron. Reliab. 61: 1-2 (2016) - [j37]André Lange, Christoph Sohrmann, Roland Jancke, Joachim Haase, Binjie Cheng, Asen Asenov, Ulf Schlichtmann:
Multivariate Modeling of Variability Supporting Non-Gaussian and Correlated Parameters. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 35(2): 197-210 (2016) - [c42]A. Asenov, Yangang Wang, Binjie Cheng, Xingsheng Wang, Plamen Asenov, Talib Al-Ameri, Vihar P. Georgiev:
Nanowire transistor solutions for 5nm and beyond. ISQED 2016: 269-274 - [c41]Toufik Sadi, Liping Wang, Asen Asenov:
Multi-scale electrothermal simulation and modelling of resistive random access memory devices. PATMOS 2016: 33-37 - 2015
- [j36]Asen Asenov:
Mastering CMOS variability is the key to success. IET Comput. Digit. Tech. 9(4): 187 (2015) - [j35]Louis Gerrer, Vihar P. Georgiev, Salvatore M. Amoroso, Ewan Towie, A. Asenov:
Comparison of Si < 100 > and < 110 > crystal orientation nanowire transistor reliability using Poisson-Schrödinger and classical simulations. Microelectron. Reliab. 55(9-10): 1307-1312 (2015) - [c40]Louis Gerrer, Razaidi Hussin, Salvatore M. Amoroso, Jacopo Franco, Pieter Weckx, Marko Simicic, N. Horiguchi, Ben Kaczer, Tibor Grasser, Asen Asenov:
Experimental evidences and simulations of trap generation along a percolation path. ESSDERC 2015: 226-229 - [c39]Razaidi Hussin, Louis Gerrer, Jie Ding, Liping Wang, Salvatore M. Amoroso, Binjie Cheng, Dave Reid, Pieter Weckx, Marko Simicic, Jacopo Franco, Annelies Vanderheyden, Danielle Vanhaeren, Naoto Horiguchi, Ben Kaczer, Asen Asenov:
Statistical simulations of 6T-SRAM cell ageing using a reliability aware simulation flow. ESSDERC 2015: 238-241 - [c38]A. Asenov, Jie Ding, Dave Reid, Plamen Asenov, Salvatore M. Amoroso, Fikru Adamu-Lema, Louis Gerrer:
Unified approach for simulation of statistical reliability in nanoscale CMOS transistors from devices to circuits. ISCAS 2015: 2449-2452 - [c37]Saurabh Sinha, Lucian Shifren, Vikas Chandra, Brian Cline, Greg Yeric, Robert C. Aitken, Bingjie Cheng, Andrew R. Brown, Craig Riddet, C. Alexandar, Campbell Millar, Asen Asenov:
Circuit design perspectives for Ge FinFET at 10nm and beyond. ISQED 2015: 57-60 - 2014
- [j34]Louis Gerrer, Jie Ding, Salvatore M. Amoroso, Fikru Adamu-Lema, Razaidi Hussin, Dave Reid, Campbell Millar, A. Asenov:
Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: A review. Microelectron. Reliab. 54(4): 682-697 (2014) - [j33]Asen Asenov, Ulf Schlichtmann, Cher Ming Tan, Hei Wong, Xing Zhou:
Special section reliability and variability of devices for circuits and systems. Microelectron. Reliab. 54(6-7): 1057 (2014) - [j32]Louis Gerrer, Salvatore M. Amoroso, Razaidi Hussin, Asen Asenov:
RTN distribution comparison for bulk, FDSOI and FinFETs devices. Microelectron. Reliab. 54(9-10): 1749-1752 (2014) - [c36]Xingsheng Wang, Binjie Cheng, Andrew R. Brown, Campbell Millar, Asen Asenov:
Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stability. ESSDERC 2014: 349-352 - [c35]Vihar P. Georgiev, Salvatore M. Amoroso, Laia Vila-Nadal, Cristoph Busche, Leroy Cronin, Asen Asenov:
FDSOI molecular flash cell with reduced variability for low power flash applications. ESSDERC 2014: 353-356 - [c34]Asen Asenov:
Factoring variability in the Design/Technology Co Optimisation (DTCO) in advanced CMOS. ETS 2014: 1 - [c33]Vihar P. Georgiev, Asen Asenov:
Multi-scale Computational Framework for Evaluating of the Performance of Molecular Based Flash Cells. NMA 2014: 196-203 - 2013
- [j31]Xingsheng Wang, Binjie Cheng, Jente B. Kuang, Andrew R. Brown, Campbell Millar, Asen Asenov:
Statistical Variability and Reliability and the Impact on Corresponding 6T-SRAM Cell Design for a 14-nm Node SOI FinFET Technology. IEEE Des. Test 30(6): 18-28 (2013) - [j30]Negin Moezi, Daryoosh Dideban, Binjie Cheng, Scott Roy, Asen Asenov:
Impact of statistical parameter set selection on the statistical compact model accuracy: BSIM4 and PSP case study. Microelectron. J. 44(1): 7-14 (2013) - [j29]Liping Wang, Andrew R. Brown, Binjie Cheng, Asen Asenov:
Analytical Models for Three-Dimensional Ion Implantation Profiles in FinFETs. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 32(12): 2004-2008 (2013) - [c32]Asen Asenov, Craig Alexander, Craig Riddet, Ewan Towie:
Predicting future technology performance. DAC 2013: 32:1-32:6 - [c31]Jie Ding, Dave Reid, Campbell Millar, Asen Asenov:
Investigation of SRAM using BTI-aware statistical compact models. ESSDERC 2013: 186-189 - [c30]Vihar P. Georgiev, Stanislav Markov, Laia Vila-Nadal, Cristoph Busche, Leroy Cronin, Asen Asenov:
Multi-scale computational framework for the evaluation of variability in the programing window of a flash cell with molecular storage. ESSDERC 2013: 230-233 - [c29]Xingsheng Wang, Binjie Cheng, Andrew R. Brown, Campbell Millar, Jente B. Kuang, Sani R. Nassif, Asen Asenov:
Impact of statistical variability and charge trapping on 14 nm SOI FinFET SRAM cell stability. ESSDERC 2013: 234-237 - [c28]Plamen Asenov, David New, Dave Reid, Campbell Millar, Scott Roy, Asen Asenov:
Evaluating the accuracy of SRAM margin simulation through large scale Monte-Carlo simulations with accurate compact models. ICICDT 2013: 29-32 - [c27]Binjie Cheng, Xingsheng Wang, Andrew R. Brown, Jente B. Kuang, Dave Reid, Campbell Millar, Sani R. Nassif, Asen Asenov:
SRAM device and cell co-design considerations in a 14nm SOI FinFET technology. ISCAS 2013: 2339-2342 - 2012
- [j28]Muhammad Faiz Bukhori, Noor Ain Kamsani, Asen Asenov, Nazrul Anuar Nayan:
Accurate capturing of the statistical aspect of NBTI/PBTI variability into statistical compact models. Microelectron. J. 43(11): 793-801 (2012) - [j27]Asen Asenov, Ulf Schlichtmann, Cher Ming Tan, Hei Wong, Xing Zhou:
ICMAT 2011 - Reliability and variability of semiconductor devices and ICs. Microelectron. Reliab. 52(8): 1531 (2012) - [j26]Louis Gerrer, Stanislav Markov, Salvatore M. Amoroso, Fikru Adamu-Lema, Asen Asenov:
Impact of random dopant fluctuations on trap-assisted tunnelling in nanoscale MOSFETs. Microelectron. Reliab. 52(9-10): 1918-1923 (2012) - [c26]Salvatore M. Amoroso, Louis Gerrer, Stanislav Markov, Fikru Adamu-Lema, Asen Asenov:
Comprehensive statistical comparison of RTN and BTI in deeply scaled MOSFETs by means of 3D 'atomistic' simulation. ESSDERC 2012: 109-112 - [c25]Xingsheng Wang, Binjie Cheng, Andrew R. Brown, Campbell Millar, Asen Asenov:
Statistical variability in 14-nm node SOI FinFETs and its impact on corresponding 6T-SRAM cell design. ESSDERC 2012: 113-116 - [c24]Plamen Asenov, Dave Reid, Scott Roy, Campbell Millar, Asen Asenov:
An advanced statistical compact model strategy for SRAM simulation at reduced VDD. ESSDERC 2012: 205-208 - [c23]Esteve Amat, A. Asenov, Ramon Canal, Binjie Cheng, J.-Ll. Cruz, Zoran Jaksic, Miguel Miranda, Antonio Rubio, Paul Zuber:
Analysis of FinFET technology on memories. IOLTS 2012: 169 - [c22]Tong Boon Tang, Alan F. Murray, Binjie Cheng, Asen Asenov:
A framework to study time-dependent variability in circuits at sub-35nm technology nodes. ISCAS 2012: 1568-1571 - 2011
- [j25]James Alfred Walker, James A. Hilder, Dave Reid, Asen Asenov, Scott Roy, Campbell Millar, Andy M. Tyrrell:
The evolution of standard cell libraries for future technology nodes. Genet. Program. Evolvable Mach. 12(3): 235-256 (2011) - [j24]Antonio J. García-Loureiro, Natalia Seoane, Manuel Aldegunde, Raúl Valín Ferreiro, Asen Asenov, Antonio Martinez, Karol Kalna:
Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 30(6): 841-851 (2011) - [c21]Asen Asenov, Andrew R. Brown, Binjie Cheng:
Statistical aspects of NBTI/PBTI and impact on SRAM yield. DATE 2011: 1480-1485 - [c20]Michael Merrett, Plamen Asenov, Yangang Wang, Mark Zwolinski, Dave Reid, Campbell Millar, Scott Roy, Zhenyu Liu, Stephen B. Furber, Asen Asenov:
Modelling circuit performance variations due to statistical variability: Monte Carlo static timing analysis. DATE 2011: 1537-1540 - [c19]Nivard Aymerich, A. Asenov, Andrew R. Brown, Ramon Canal, Binjie Cheng, Joan Figueras, Antonio González, Enric Herrero, S. Markov, Miguel Miranda, Peyman Pouyan, Tanausú Ramírez, Antonio Rubio, Elena I. Vatajelu, Xavier Vera, Xingsheng Wang, Paul Zuber:
New reliability mechanisms in memory design for sub-22nm technologies. IOLTS 2011: 111-114 - [c18]Ramon Canal, Antonio Rubio, A. Asenov, A. Brown, Miguel Miranda, Paul Zuber, Antonio González, Xavier Vera:
TRAMS Project: Variability and Reliability of SRAM Memories in sub-22 nm Bulk-CMOS Technologies. FET 2011: 148-149 - 2010
- [j23]Binjie Cheng, Daryoosh Dideban, Negin Moezi, Campbell Millar, Gareth Roy, Xingsheng Wang, Scott Roy, Asen Asenov:
Statistical-Variability Compact-Modeling Strategies for BSIM4 and PSP. IEEE Des. Test Comput. 27(2): 26-35 (2010) - [j22]Brahim Benbakhti, J. S. Ayubi-Moak, Karol Kalna, D. Lin, Geert Hellings, Guy Brammertz, Kristin De Meyer, Iain Thayne, Asen Asenov:
Impact of interface state trap density on the performance characteristics of different III-V MOSFET architectures. Microelectron. Reliab. 50(3): 360-364 (2010) - [c17]Asen Asenov, Binjie Cheng, Daryoosh Dideban, Urban Kovac, Negin Moezi, Campbell Millar, Gareth Roy, Andrew R. Brown, Scott Roy:
Modeling and simulation of transistor and circuit variability and reliability. CICC 2010: 1-8 - [c16]Binjie Cheng, Daryoosh Dideban, Negin Moezi, Campbell Millar, Gareth Roy, Xingsheng Wang, Scott Roy, Asen Asenov:
Capturing intrinsic parameter fluctuations using the PSP compact model. DATE 2010: 650-653 - [c15]Tong Boon Tang, Alan F. Murray, Binjie Cheng, Asen Asenov:
Statistical NBTI-effect prediction for ULSI circuits. ISCAS 2010: 2494-2497 - [c14]Asen Asenov:
Advanced Monte Carlo Techniques in the Simulation of CMOS Devices and Circuits. NMA 2010: 41-49
2000 – 2009
- 2009
- [c13]Noor Ain Kamsani, Binjie Cheng, Scott Roy, Asen Asenov:
Impact of Random Dopant Induced Statistical Variability on Inverter Switching Trajectories and Timing Variability. ISCAS 2009: 577-580 - [c12]Asen Asenov, Dave Reid, Campbell Millar, Scott Roy, Gareth Roy, Richard O. Sinnott, Gordon Stewart, Graeme Robert Stewart:
Enabling Cutting-Edge Semiconductor Simulation through Grid Technology. LSSC 2009: 369-378 - 2008
- [j21]Muhammad Faiz Bukhori, Scott Roy, Asen Asenov:
Statistical aspects of reliability in bulk MOSFETs with multiple defect states and random discrete dopants. Microelectron. Reliab. 48(8-9): 1549-1552 (2008) - [j20]Urban Kovac, Dave Reid, Campbell Millar, Gareth Roy, Scott Roy, Asen Asenov:
Statistical simulation of random dopant induced threshold voltage fluctuations for 35 nm channel length MOSFET. Microelectron. Reliab. 48(8-9): 1572-1575 (2008) - [c11]Richard O. Sinnott, Christopher Bayliss, C. Davenhall, Bruno Harbulot, Mike Jones, Campbell Millar, Gareth Roy, Scott Roy, Gordon Stewart, John P. Watt, Asen Asenov:
Secure, Performance-Oriented Data Management for nanoCMOS Electronics. eScience 2008: 87-94 - [c10]Richard O. Sinnott, Christopher Bayliss, Thomas Doherty, David B. Martin, Campbell Millar, Gordon Stewart, John P. Watt, Asen Asenov, Gareth Roy, Scott Roy, C. Davenhall, Bruno Harbulot, M. Jones:
Integrating Security Solutions to Support nanoCMOS Electronics Research. ISPA 2008: 71-79 - [i1]Richard O. Sinnott, Campbell Millar, Asen Asenov:
Supercomputing at Work in the nanoCMOS Electronics Domain. ERCIM News 2008(74) (2008) - 2007
- [c9]Liangxiu Han, Asen Asenov, Dave Berry, Campbell Millar, Gareth Roy, Scott Roy, Richard O. Sinnott, Gordon Stewart:
Towards a Grid-Enabled Simulation Framework for Nano-CMOS Electronics. eScience 2007: 305-311 - [c8]Binjie Cheng, Scott Roy, A. Asenov:
The scalability of 8T-SRAM cells under the influence of intrinsic parameter fluctuations. ESSCIRC 2007: 93-96 - [c7]Asen Asenov:
Statistical Device Variability and its Impact on Yield and Performance. IOLTS 2007: 253 - 2005
- [c6]Natalia Seoane, Antonio J. García-Loureiro, Karol Kalna, Asen Asenov:
A High-Performance Parallel Device Simulator for High Electron Mobility Transistors. PARCO 2005: 407-414 - 2004
- [j19]L. Yang, Asen Asenov, Jeremy R. Watling, M. Boriçi, John R. Barker, Scott Roy, K. Elgaid, Iain Thayne, T. Hackbarth:
Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs. Microelectron. Reliab. 44(7): 1101-1107 (2004) - [c5]Binjie Cheng, Scott Roy, Asen Asenov:
The impact of random doping effects on CMOS SRAM cell. ESSCIRC 2004: 219-222 - 2003
- [j18]Karol Kalna, Asen Asenov:
Nonequilibrium and ballistic transport, and backscattering in decanano HEMTs: a Monte Carlo simulation study. Math. Comput. Simul. 62(3-6): 357-366 (2003) - 2001
- [j17]John R. Barker, Asen Asenov:
IWCE-7 Committees. VLSI Design 13(1-4): 3 (2001) - [j16]Asen Asenov, Gabriela Slavcheva, Savas Kaya, R. Balasubramaniam:
Quantum Corrections to the 'Atomistic' MOSFET Simulations. VLSI Design 13(1-4): 15-21 (2001) - [j15]Jeremy R. Watling, Yan P. Zhao, Asen Asenov, John R. Barker:
Non-Equilibrium Hole Transport in Deep Sub-Micron Well-Tempered Si p-MOSFETs. VLSI Design 13(1-4): 169-173 (2001) - [j14]Karol Kalna, Asen Asenov, K. Elgaid, Iain Thayne:
Scaling of pHEMTs to Decanano Dimensions. VLSI Design 13(1-4): 435-439 (2001) - [j13]Jeremy R. Watling, John R. Barker, Asen Asenov:
Soft Sphere Model for Electron Correlation and Scattering in the Atomistic Modelling of Semiconductor Devices. VLSI Design 13(1-4): 441-446 (2001)
1990 – 1999
- 1999
- [j12]Asen Asenov, Andrew R. Brown, John H. Davies, Subhash Saini:
Hierarchical approach to "atomistic" 3-D MOSFET simulation. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 18(11): 1558-1565 (1999) - 1998
- [j11]Asen Asenov, Andrew R. Brown, Scott Roy, John R. Barker:
Topologically Rectangular Grids in the Parallel Simulation of Semiconductor Devices. VLSI Design 6(1-4): 91-95 (1998) - [j10]S. Babiker, Asen Asenov, John R. Barker, S. P. Beaumont:
Quadrilateral Finite Element Monte Carlo Simulation of Complex Shape Compound FETs. VLSI Design 6(1-4): 127-130 (1998) - [j9]Clinton R. Arokianathan, Asen Asenov, John H. Davies:
A New Approach based on Brownian Motion for the Simulation of Ultra-Small Semiconductor Devices. VLSI Design 6(1-4): 243-246 (1998) - [j8]Andrew R. Brown, Asen Asenov, John R. Barker:
3D Parallel Finite Element Simulation of In-Cell Breakdown in Lateral-Channel IGBTs. VLSI Design 8(1-4): 99-103 (1998) - [j7]S. Babiker, Asen Asenov, Norman Cameron, S. P. Beaumont, John R. Barker:
Complete RF Analysis of Compound FETs Based on Transient Monte Carlo Simulation. VLSI Design 8(1-4): 313-317 (1998) - [j6]Asen Asenov, S. Babiker, S. P. Beaumont, John R. Barker:
Monte Carlo Calibrated Drift-Diffusion Simulation of Short Channel HFETs. VLSI Design 8(1-4): 319-323 (1998) - [j5]Sumit Roy, Asen Asenov, S. Babiker, John R. Barker, S. P. Beaumont:
RF Performance of Si/SiGe MODFETs: A Simulation Study. VLSI Design 8(1-4): 325-330 (1998) - [j4]Clinton R. Arokianathan, John H. Davies, Asen Asenov:
Ab-initio Coulomb Scattering in Atomistic Device Simulation. VLSI Design 8(1-4): 331-335 (1998) - 1996
- [j3]Asen Asenov, John R. Barker, Andrew R. Brown, G. L. Lee:
Scalable parallel 3D finite element nonlinear Poisson solver. Simul. Pract. Theory 4(2-3): 155-168 (1996) - [c4]Scott Roy, Asen Asenov, John R. Barker:
Optimum partitioning of topologically rectangular grids. EUROSIM 1996: 179-185 - 1995
- [j2]Asen Asenov, Dave Reid, John R. Barker:
Speed-Up of Scalable Iterative Linear Solvers Implemented on an Array of Transputers. Parallel Comput. 21(4): 669-682 (1995) - [c3]A. Asenov, C. R. Stanley:
A Virtual IC Factory in an Undergraduate Semiconductor Device Fabrication Laboratory. EUROSIM 1995: 1311-1316 - 1994
- [j1]Asen Asenov, Dave Reid, John R. Barker:
Speed-Up of Scalable Iterative Linear Solvers Implemented on an Array of Transputers. Parallel Comput. 20(3): 375-387 (1994) - [c2]Asen Asenov, John R. Barker, Andrew R. Brown, G. L. Lee:
Scalable Parallel 3D Finite Element Nonlinear Poisson Solver. EUROSIM 1994: 665-672 - [c1]John R. Barker, Asen Asenov, Andrew R. Brown, J. Cluckie, S. Babiker, Clinton R. Arokianathan:
Parallel Simulation of Semiconductor Devices. EUROSIM 1994: 683-690
Coauthor Index