"Enhanced Memory Performance in Ferroelectric NAND Applications: The Role ..."

Prasanna Venkatesan Ravindran et al. (2025)

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DOI: 10.1109/IRPS48204.2025.10982749

access: closed

type: Conference or Workshop Paper

metadata version: 2025-06-04

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Prasanna Venkatesan Ravindran, Andrea Padovani, Lance Fernandes, Priyankka Gundlapudi Ravikumar, Chinsung Park, Huy Tran, Zekai Wang, Hari Jayasankar, Amrit Garlapati, Taeyoung Song, Hang Chen, Winston Chern, Zheng Wang, Kijoon Kim, Jongho Woog, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Shimeng Yu, Suman Datta, Luca Larcher, Gaurav Thareja, Asif Khan:
Enhanced Memory Performance in Ferroelectric NAND Applications: The Role of Tunnel Dielectric Position for Robust 10-Year Retention. IRPS 2025: 1-7

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