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ORCIDIRPS 2025: Monterey, CA, USA
- IEEE International Reliability Physics Symposium, IRPS 2025, Monterey, CA, USA, March 30 - April 3, 2025. IEEE 2025, ISBN 979-8-3315-0477-9
- Amratansh Gupta
, Hao Yu, Sachin Yadav, AliReza Alian, Uthavasankaran Peralagu, E.-San Jang, Ying-Chun Kuo, Nadine Collaert, Bertrand Parvais:
Physical Insights into High Current Collapse under ON-state Stress in RF GaN HEMTs. 1-6 - Qiming Zhang, Farooq Siddiqui:
Design Considerations for Long-Term Reliability of Outdoor Electronic Assemblies (Invited). 1-6 - Y. C. Ong, Y. H. Chen, H. H. Wang, J. Q. Liang, Y. S. Chen, Jarcle Huang, T. W. Chiang, J. C. Huang, C. H. Weng, C. Y. Wang, Bruce P. H. Lee, Allen Y. J. Wang, K. C. Huang, Harry Chuang:
Design-Technology-Reliability Co-Optimization for MRAM-OTP Integration - A Methodological Approach. 1-6 - Eunjin Kim, Hyoungjin Park, Jiae Jeong, Seokjae Lim, Jiyong Woo:
Comprehensive Reliability Assessment of WOx Engineering for Temperature-Resilient HfZrO2 FeCAP. 1-5 - Haokai Guan, Yulin Feng, Shichao Zhong, Linbo Shan, Kefan Tao, Peng Huang, Zongwei Wang, Lei Sun, Lifeng Liu, Jinfeng Kang, Yimao Cai:
Investigation on Temperature-Dependent Resistance States of 40nm MLC-RRAM Macro. 1-7 - Aleksandr Baklanov, Andreas Martin, Annalisa Cappellani, Sebastian Pregl, Dirk Meinhold:
Optical Reliability and Reliability of Optical Devices. 1-6 - D. Alexandrescu, J. Athavale, L. Kennedy, S. Datta:
AI-Powered Analytics Using Empirical Data from In-Field Measurements and Reliability Qualification. 1-6 - Jeffrey LaRoche, Lovelace Soirez, Eduardo Chumbes:
Copper Damascene Based Heterogeneous Integration of GaN with CMOS on 200 mm Si Substrates (Invited). 1-4 - M. D. Shroff, J. Satasia, C. Lu, K. Xie, Z. Y. Liu, L. Zhang, R. Peng, J. Jiang, W. Zhao, G. Liu, R. Pavlanin, S. Kala-Janssen, R. Ye, H. Sanchez, D. Bearden, C. Le Cam, A. Patel, C. Magnella, C. Richards-Chacon:
Application-based Modeling of I/O Reliability. 1-6 - Kozo Takeuchi, Takashi Kato, Ryunosuke Nakamura, Daisuke Kobayashi:
Predicting Neutron SERs from Alpha-Ray Test Results Through SEU Physics Parameter Extraction. 1-6 - Simon Van Beek, Adrian Vaisman Chasin, Subhali Subhechha, Harold Dekkers, Nouredine Rassoul, Yiqun Wan, Hongwei Tang, Joao P. Bastos, Attilio Belmonte, Gouri Sankar Kar:
Dielectric Breakdown Analysis on Bottom and Top-Gated IGZO-TFT. 1-7 - Changsik Kim, Jongmoo Lee, Jihee Jun, Chanhee Han, In-Jae Bae, Youngkwan Park, Hana Cho, Hyeontae Kim, Dongsik Park, Heonjun Ha, Jaejoon Song, Changsik Yoo, Sangjoon Hwang:
Improvement of IGZO BTI for DRAM Cell application by heat treatment and recovery effect. 1-6 - Riccardo Fraccaroli, Matteo Dell'Andrea, Manuel Fregolent, Mirco Boito, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Eleonora Canato, Isabella Rossetto, Alessio Pirani, Giansalvo Pizzo, Cristina Miccoli, Alfio Russo, Maria Eloisa Castagna, Ferdinando Iucolano, Matteo Meneghini:
Evidence for Avalanche Operation in Sub-Micrometer Power GaN HEMTs with p-GaN Gate. 1-5 - Hyunsung Jung, Yoon-Jong Song, Seungpil Ko, Jeong-Heon Park, Su-Jin Ahn:
Overview of Reliability in Scaling Embedded STT-MRAM. 1-6 - Chen-Yu Liang, Ming-Dou Ker:
Improved Layout Style on Diode- Trigger SCR for Low-C ESD Protection. 1-5 - L. Silvestri, S. Jin, W. Jeong, H. Shim, W. Yim, H. Kwon, D. Oh, S. Son, N. Zographos, N. Kim, X.-W. Lin, L. Sponton, Y. Lee:
Multiscale Modeling and Calibration of Hot-Carrier Stress Degradation in SiGe DRAM Peripheral MOSFETs. 1-6 - Priyankka Gundlapudi Ravikumar, Andrea Padovani, Prasanna Venkatesan Ravindran, Chinsung Park, Nashrah Afroze, Mengkun Tian, Suman Datta, Shimeng Yu, Luca Larcher, Gaurav Thareja, Asif Khan:
Understanding Correlation Between Memory Window Closure, Leakage and Read Delay Effects for FEFET Reliability Improvement: Role of IL and FE Traps. 1-5 - Sharadindu Gopal Kirtania, Faaiq G. Waqar, Dyutimoy Chakraborty, Jaewon Shin, Eknath Sarkar, Justin Reiss, Jason Dean Yeager, Douglas E. Wolfe, Shimeng Yu, Suman Datta:
Radiation-Resilient Amorphous Indium Oxide FEFETs for Embedded Nonvolatile Memory. 1-9 - Rafael Castro-López, Javier Diaz-Fortuny, Elisenda Roca, Francisco V. Fernández:
When Variability Meets Security. 1-9 - Alicja Lesniewska, Y. Fang, G. Delie, Philippe Roussel, Koen Van Sever, Emmanuel Chery, O. Varela Pedreira, Ivan Ciofi, S. H. Park, Zsolt Tokei, Kris Croes:
Leakage and TDDB Mechanisms in 18 nm Pitch Direct Metal Etch Ru Interconnects with Airgaps. 1-6 - Mayank Yadav, Mahesh Vaidya, Mayank Shrivastava:
Proposal to Achieve the Ultimate Holding Voltage Tunability in Silicon Controlled Rectifiers (SCRs) for a Wide Range of ESD Protection Application. 1-5 - Alan Y. Otero-Carrascal, Edmundo A. Gutiérrez-D., Reydezel Torres-Torres, Oscar Huerta-Gonzalez, P. Srinivasan, Héctor Uribe:
Off-State TDDB Degradation of RC-Features and Threshold Voltage on Advanced FinFETs from RF Measurements for 5G Applications. 1-6 - Yunsur Kim, Seonuk Jeon, Seokjae Lim, Jiyong Woo:
Reliability-Ensured and Fast (xRRAM. 1-5 - B. D. Rummel, C. E. Glaser, J. A. Ohlhausen, J. P. Klesko, M. L. Meyerson, C. Remple, R. J. Kaplar:
Interfacial GaOx in $\text{Al}_{2}\mathrm{O}_{3}/n-\text{GaN}$ MOS Structures Studied by Quasi-Static CV and ToF-SIMS. 1-10 - Gabriel Preston, Greer Gonzolez, Andrea S. Karnyoto, Fitya S. Mozar, Matthew M. Henry, Mahmud Isnan, Kuncahyo S. Nugroho, Henry Candra, Muhamad Doris, Dianing N. N. Putri, Tyas K. Sari, Bens Pardamean, Endang Djuana, Derrric Speaks, Arief S. Budiman:
Crack Catcher AI - Enabling Smart Fracture Mechanics Approach for Damage Control in Thin Silicon Wafers for 3D Semiconductor Integrated Devices/Packages. 1-6 - Shih-Cheng Huang, Ming-Dou Ker:
Latch-Up Over-Current Protection Design with Power Restarted Function. 1-7 - Himanshu Marothya, Atul Sachan, Vishwas Acharya, Sandip Mondal:
Burst CV (< 2μs) Measurement System for BTI Analysis of MOS Capacitors. 1-5 - Runhao Han, Jia Yang, Tao Hu, Mingkai Bai, Yajing Ding, Xianzhou Shao, Saifei Dai, Xiaoqing Sun, Junshuai Chai, Hao Xu, Xiaolei Wang, Wenwu Wang, Tianchun Ye:
Improved Memory Window and Retention of Silicon Channel Hf0.5Zr0.5O2 FeFET by Using SiO2/HfO2/SiO2 Gate Side Interlayer. 1-5 - Yusuke Higashi, Anirudh Varanasi, Philippe J. Roussel, Pablo Saraza-Canflanca, J. P. Bastos, Alexander Grill, E. Catapano, R. Asanovski, Jacopo Franco, Ben Kaczer, Adrian Chasin, Devin Verreck, S. Ramesh, Laurent Breuil, Antonio Arreghini, S. Rachidi, Y. Jeong, Geert Van den Bosch, Maarten Rosmeulen, Robin Degraeve:
Advanced RTN Analysis on 3D NAND Trench Devices Using Physics-Informed Machine Learning Framework. 1-6 - F. Y. Jin, C. H. Yang, M. C. Shih, P. L. Wang, W. S. Hung, W. H. Chuang:
Comprehensive Study of Saturation Current Impact on LDMOS Reliability. 1-6 - Dhanoop Varghese, Vijaya Vemuri, Arif Sonnet, Vijay Reddy, Srikanth Krishnan, Vivek Varier, Cheuk Yu, Srinivas Pulijala:
Positive Bias Temperature Instability in Polysilicon/SiO2 PMOS Transistors for Analog High Precision Applications. 1-6 - Harsh Raj, Mayank Shrivastava:
First Observations and Physical Insights of the Dynamic Breakdown Voltage and Overvoltage Margin Under Pulsed Conditions in β-Ga2O3Based Devices. 1-4 - H. Zhou, M. Hasanuzzaman, S. D. Suk, S. Emans, S. Siddiqui, R. Robison, R. Vega, M. Wang, Yasir Sulehria, S. Mochizuki, C. Durfee, Oleg Gluschenkov, N. Fokas, G. Bajpai, E. Leobandung, R. Mo, R. Krishnan, K. Okada, H. Miki, L. Qin, C. Child, T. Standaert, K. Zhao, D. Sohn, Y. Fukuzaki, K. Tomida, D. Guo, H. Bu:
Hot Carrier Degradation and performance boost on Si Channel nFET Gate-All-Around Nanosheet Devices. 1-8 - Liang Xiang, Gangping Yan, Yunfei Shi, Hong Yang, Shangbo Yang, Gaobo Xu, Xiaolei Wang, Guilei Wang, Huaxiang Yin, Chao Zhao, Jun Luo, Wenwu Wang:
Trap Behaviors and Degradation Modeling in Positive Bias Temperature Instability of Back Gated IGZO Transistors. 1-5 - Emmanuel Chery, Lucie Sourgen, Jacopo Franco, Mihaela Ioana Popovici, Eric Beyne:
Reliability Study of La- and Al-Doped ZrO2 Dielectrics for High Density MIMCAP Applications. 1-7 - Tom White, Jesse Alton, Brett Gibson, Martin Igarashi, Joy Y. Liao, Timothy Pham, Howard L. Marks:
Recent Developments in EOTPR Towards a Fully Automated Tool for High Volume Failure Analysis. 1-5 - Matthew Drallmeier, Elyse Rosenbaum:
TDDB Characterization of High-k Gate Dielectric on a Sub-nanosecond Timescale. 1-8 - Vladislav A. Vashchenko, Andrei Shibkov:
Evaluation of High Holding Voltage SCR Protection Capability in EOS and Overvoltage Regimes. 1-5 - Chih Chen, Shih-Chi Yang, You-Yi Lin, Huai-En Lin, Dinh-Phuc Tran:
Thermo-Mechanical Stress and Its Effect on the Fabrication and Reliability of Cu-SiO2 Hybrid Bonds for 3D IC Heterogeneous Integration (Invited). 1-7 - J. P. Bastos, Jacopo Franco, Barry J. O'Sullivan, Yusuke Higashi, Adrian Chasin, J. Ganguly, Hiroaki Arimura, Alessio Spessot, M.-S. Kim, N. Horiguchi:
Gate Stack Development for Next Gen High Voltage Periphery DRAM Devices. 1-8 - R. Asanovski, Hiroaki Arimura, J. Ganguly, Pierpaolo Palestri, Alexander Grill, Ben Kaczer, Naoto Horiguchi, Luca Selmi, Jacopo Franco:
Impact of Gate Metal Work Function on 1/f Noise in RMG MOSFETs. 1-6 - Zuoyuan Dong, Zixuan Sun, Lan Li, Zirui Wang, Changqing Ye, Yu Yao, Jialu Huang, Xiaomei Li, Xing Wu, Runsheng Wang:
New Insights into TDDB in FinFET Based on Strain Analysis at the Atomistic Scale. 1-4 - G. Molinaro, Hiroaki Arimura, S. Sacchi, Andrea Vici, Robin Degraeve, Ben Kaczer, Naoto Horiguchi, M. Houssa, Jacopo Franco:
TDDB Reliability Improvement of Low Thermal Budget RMG Stacks. 1-6 - Armen Kteyan, J. Choy, Valeriy Sukharev, Stéphane Moreau, Y. Yi, R. Bloom, C. Kim:
Electromigration Assessment in Power Grids with Account of Non-Uniform Temperature Distribution. 1-9 - Tomoharu Kishita, Ryo Kishida, Kazutoshi Kobayashi:
Investigation of the Time-Dependent BTI-induced Degradation Distribution for Ring Oscillators in Ultra-Long-Term Stress Conditions. 1-4 - M. Greatti, J. L. Mazzola, P. Vogler, C. Monzio Compagnoni, Alessandro S. Spinelli, D. Paci, F. Speroni, D. Asnaghi, M. Salina, F. Guzzi, M. Lauria, V. Marano, Gerardo Malavena:
Current Dynamics during Bipolar TDDB in Galvanic Isolators based on Polymeric Dielectrics. 1-4 - Da Yong Shin, Hyunjun Choi, Joosung Kim, Myungsoo Yeo, Miji Lee, Taiki Uemura, Shin-Young Chung, Jong-Ho Lee:
Introduction to Voltage-Ramping Wafer Level Electromigration Method and Current Exponent Correction Factor for Co-Capping Metal Lines. 1-5 - Howard Gan, Antai Xu, Jeffrey Zhang:
Methodology of Predicting Package Early Failure. 1-6 - Bernhard Ruch, Rajarshi Roy Chaudhuri, Boris Butej, Joao Gomes, Manuel Stabentheiner, Korbinian Reiser, Christian Koller, Dionyz Pogany, Clemens Ostermaier, Michael Waltl:
Evidence for 2D Hole Gas in GaN Gate Injection Transistors and its Role in RDson Recovery. 1-6 - L. Tondelli, A. J. Scholten, J. Van Beurden, R. M. T. Pijper, R. Asanovski, T. V. Dinh, L. Selmi:
Distinct Signatures of Self-Heating and Trap Dynamics on the AC Y-Parameters of Advanced n-MOSFETs. 1-5 - Jingu Park, Jongil Jeong, Byungju Kim, Sehwan Park, Myungmin Lee, Donghwa Yun, Namyong Park:
Investigating the Automotive HPC Safety Architecture for Software Defined Vehicle. 1-6 - Seungmin Lee, Taegon Lee, Gaeun Kim, Kwang-Ryul Lee, Eunji An, Sekwon Hong, Sungjun Kim, Soonkwan Kang, Seokwoo Hong, Hwan Cha, Minkyu Kang, Jaesun Yun, Moongeun Kim, Woongseop Lee, Joonsung Lim, Joonyoung Oh, Kyungyoon Noh, Seungwan Hong, Sunghoi Hur:
New Burnout Failure at the Chip Edge: Analysis and Preventive Design by a Novel Experimental Approach. 1-7 - Y. Fang, Alicja Lesniewska, Ivan Ciofi, Philippe Roussel, I. De Wolf, Kris Croes:
Local Electric Field-Aware 3D TDDB Model for BEOL Reliability Predictions. 1-8 - Chih-Feng Ku, Yu-Lin Li, Yu-Chiao Lin, C. K. Kao, Ting-Ying Shih, Huei-Wen Yang:
Novel Stress Migration Failure Analysis by EBSD-KAM. 1-4 - Chen-Yi Cho, Tzu-Yi Chao, Yu-Lin Shih, Tzu-Yao Lin, Tuo-Hung Hou:
Interplay Between Charge Defects and Ferroelectric Reliability: From Wake-Up, Imprint, Fatigue to Breakdown. 1-6 - Alberto Marcuzzi, M. Avramenko, Carlo De Santi, Peter Moens, G. J. Gomez Garcia, A. Feng, T. Grasser, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
Recombination-Driven Interface Trap Generation in SiC MOSFETs Under Constant Voltage and Constant Current Stress. 1-5 - Andrea Piccioni:
Repetitive Short-Circuit Ruggedness of Different SiC MOSFET Channel Designs. 1-6 - H. G. Medeiros, A. K. Brandl, P. Kumar, H. Scriba, S. Vuillemin, S. Race, I. Kovacevic-Badstübner, M. E. Bathen, U. Grossner:
On How to Implement Experimentally Obtained Defect Characteristics in SiC Device Simulation. 1-6 - Tadeu Mota Frutuoso, William Vandendaele, A. Bond, F. Bringuier, V. Lapras, Marie Claire Cyrille, Claire Fenouillet-Béranger, B. Duriez, Xavier Garros:
Fast CV MSM Technique for Comprehensive Analysis of Bulk Trapping in Low-K Carbon-Doped Dielectrics. 1-7 - Tao Du, Wei Zhang, Xuanyao Fong, Guangxi Hu, Peng Zhou, Ye Lu:
Comprehensive Modeling and Investigation of Intrinsic Variation Source Fluctuation in 2D-Layered Thin Film Transistors. 1-6 - Tobias N. Wassermann, Florian Holley, Paul Salmen:
Reliability of a 3.3 kV SiC MOSFET .XT. 1-5 - Javier Diaz-Fortuny, Mahdi Benkhelifa, Alexander Grill, Erik Bury, Robin Degraeve, Ben Kaczer, Hussam Amrouch:
Investigation of Cryogenic Aging in 28 nm CMOS: Suppression of BTI and HCD in Circuits and SRAM. 1-7 - Jenna B. Kronenberg, Y. Xiong, Nicholas J. Pieper, Dennis R. Ball, Bharat L. Bhuva:
Power-Aware Mitigation of Logic Soft Error Rates at the 3-nm Bulk FinFET Node. 1-5 - Richard Rao, Sean Hsu, Ivan Tan, Steve Yang, Shrinath Ramdas, Dwayne R. Shirley, Kevin Caffey:
Chip Board Package Interaction Reliability for Large Size FCBGA Package. 1-6 - Shudong Huang, Elyse Rosenbaum:
Optimized CDM-ESD Protection for 100+ Gbps Wireline IO in 16-nm CMOS. 1-9 - Viktoria Schlykow, Kunifumi Suzuki, Yoko Yoshimura, Hidesato Ishida, Kiwamu Sakuma, Kazuhiro Matsuo, Masumi Saitoh, Reika Ichihara:
Cycling Induced Imprint Phenomenon at Intermediate State used for Multi-Level Operation in HfO2-FeFET. 1-5 - Daniel J. Lichtenwalner:
Demonstration of the Benefits of Measuring SiC MOSFET BTI using a Triple Sense Method. 1-5 - Zhangsheng Lan, Yiming Qu, Shifan Gao, Yi Wei, Yuhao Chen, Wenchao Yan, Ming Wang, Xiaolei Yang, Shikun He, Yi Zhao:
Observation of Self-heating Process in STT-MRAM and Its Implication in Device Operations. 1-6 - Hao Yu, R. ElKashlan, Meng-Che Tsai, Yi Yang, Mamoun Guenach, Ying-Chun Kuo, Sachin Yadav, Barry J. O'Sullivan, Aarti Rathi, Amratansh Gupta, D. Xiao, Claude Desset, AliReza Alian, Uthayasankaran Peralagu, V. Afans'ev, T.-L. Wu, Bertrand Parvais, Nadine Collaert:
Perspectives on GaN MISHEMT Power Amplifier Versus Positive Gate Bias Instability. 1-6 - Moonyoung Jeong, Hyungjun Noh, Sangho Lee, Yootak Jun, Jeonghoon Oh, Jemin Park, Jaihyuk Song:
A Study on the Origin of Dynamic Charge Loss of Next Generation DRAM Cell Array Transistor. 1-4 - Kiyoshi Takeuchi, Tomoko Mizutani, Takuya Saraya, Hiroshi Oka, Takahiro Mori, Shinichi Takagi, Masaharu Kobayashi, Toshiro Hiramoto:
A Study on the Origin of MOSFET Random Telegraph Noise Under Strong Inversion at Cryogenic Temperatures. 1-6 - Ehrenfried Zschech, Kristina Kutukova:
High-Resolution X-Ray Imaging of Controlled Microcrack Steering in BEoL Stacks (Invited). 1-6 - A. Subirats, M. Samiee, G. Ferrari, U. Sharma, T. Imamoto, M. Yokomichi, S. Srivastava, K. Florent, T. Owens, A. S. Bisht, S. Mahapatra:
Modeling BTI Reliability in CMOS DRAM Periphery Device: A Review of BTI Analysis Tool (BAT). 1-6 - F. Stampfl, Clement Godfrin, Stefan Kubicek, S. Baudot, B. Raes, Kristiaan De Greve, Alexander Grill, M. Waltl:
CV Characterization of Si/SiGe Heterostructures at Cryo Temperatures. 1-5 - Mohammad Ateeb Munshi, Saniya Syed Wani, Mehak Ashraf Mir, Anup Thakare, Mayank Shrivastava:
Bridging the Performance and Reliability Gap of GaN-on-Si with GaN-on-SiC RF HEMTs by Efficient Electric Field Management Using a Novel p-type Oxide Passivation. 1-5 - G. Johnson, A Rummel, H. Stegmann, P. Barbarino, C. Poltronieri, G. Sciuto, M. Astuto, Giancarlo Calvagno, R. Ricciari:
Advanced Characterization of p/n Junctions in SiC. 1-3 - J. Minguet Lopez, Sylvain Barraud, Manon Dampfhoffer, Aurelie Souhaité, T. Dubreuil, J.-M. Pedini, C. Comboroure, A. Gharbi, F. Boulard, C. Castan, A. Lambert, François Andrieu:
Compact MEOL OxRAM with 14 Conductance Levels for Dense Embedded Inference Computing. 1-6 - Hyojun Choi, Giuk Kim, Hunbeom Shin, Yunseok Nam, Sanghun Jeon, Kwangsoo Kim, Suhwan Lim, Jongho Woo, Wanki Kim, Daewon Ha, Jinho Ahn:
The Opportunity of Anti-ferroelectrics in FeFET for Emerging Non-Volatile Memory Applications. 1-6 - H. C. Chang, Eliot Chen, P. J. Liao, J. H. Lee, Ryan Lu, Y. K. Hwang:
Refined High Resistance Baking Approaches for Optimal Interconnect Reliability. 1-5 - Stephan Menzel, Nils Kopperberg:
The Role of Materials and Defects on the Electroforming of Metal/Oxide/Metal Stacks. 1-9 - N.-A. Nguyen, O. Daoudi, Mathieu Bernard, L. Fellouh, M. Tessaire, C. Sabbione, Z. Saghi, T. Monniez, C. De Camaret, Emmanuel Nolot, Guillaume Bourgeois, A. Salvi, S. Gout, François Andrieu, Gabriele Navarro:
Reliability Performances Tuning in Ge-rich GeSbTe Phase-Change Memory Thanks to Multilayered Ge//GeSbTe Stacks. 1-5 - D. G. Refaldi, Gerardo Malavena, Luca Chiavarone, N. Gagliazzi, Alessandro S. Spinelli, C. Monzio Compagnoni:
Cryogenic Investigation of Vertical Charge Loss in 3D NAND Flash Memories. 1-7 - Ian Hill, André Ivanov:
Multilevel Variability and Epistemic Uncertainty Analysis of Reliability Physics Models Through Hierarchical Probabilistic Modelling. 1-6 - Anirudh Varanasi, Robin Degraeve, Philippe J. Roussel, Clement Merckling:
Algorithm for Robust Correction of Long-Term Drift Components in Gate Leakage Current RTN Data. 1-6 - Bruno Coppolelli, Davide Cornigli, Zheyuan Chen, Andrea Padovani, Sara Vecchi, Yanliu Dang, Luc Thomas, Luca Vandelli, Jianxin Lei, Naomi Yoshida, Renu Whig, Federico Nardi, Gaurav Thareja, Luca Larcher, Milan Pesic:
Impact of Al-based Dipole Formation on Gate Stack Integrity and Reliability. 1-8 - Anant Johari, Chin-Ya Su, Der-Sheng Chao, Ankur Gupta, Rajendra Singh, Tian-Li Wu:
Comprehensive Analysis of DC, Pulsed, and RF Performance of Submicron GaN-on-Si MIS-HEMTs Under Gamma Radiation. 1-6 - J. Olschewski, M. Hoppe, E. Kusmenko, K. Knobloch, A. Martin, Marc Tüllmann, M. Pfost:
Machine Learning-based Condition Monitoring from Power Cycling Data for Silicon Carbide Power Inverter Modules. 1-6 - Ernest Y. Wu, Richard G. Southwick, Baozhen Li:
A Systematic Study of Temperature, Polarity, Thickness, and Ramp Rate Dependencies of Ramp-Voltage Stress for SiO2 and its Comparison with 2D Gate Dielectrics. 1-10 - Nisha Gupta, Anuj Gupta, Shobhna Shukla, Janit Kumar, Philippe Roche:
Reliability Qualification Challenges and Flow for Analog Qualification Test Vehicle. 1-6 - Dishant Sangani, Dieter Claes, Pieter Weckx, Ben Kaczer, Georges G. E. Gielen:
Towards a Computationally Efficient Verilog-A Defect-Centric BTI Compact Model for Circuit Aging Simulations. 1-6 - Kazuya Uejima, Kenzo Manabe, Yoshihiro Hayashi:
Analytical Modeling of RTN with Short Dwell Time for Strict Memory Bit Error Estimation. 1-9 - Pallavi Kumari, Sayak Dutta Gupta, Amitava DasGupta, Nandita DasGupta:
Observation of Kink effect in Carbon-doped GaN-on-Si HEMTs for Power Applications. 1-5 - Ching-Ting Liu, Yao-Chun Chuang, Jyun-Lin Wu, Jia-Shen Lan, Chang-Fu Han, Chia-Hua Chang, Jia-Ming Yang, Yu-Sheng Lin, Chen-Wei Li, Ryan Lu:
CoWoS Package Reliability Risk Assessment & Mitigation from Mechanical Perspectives. 1-6 - J.-H. Choy, Armen Kteyan, R. Kang, S. Jo, Valeriy Sukharev, S. Choi, J. Passage, I. Kühn, Markus Herklotz, M. Gall:
A Physics-Based Electromigration Assessment of Analog Circuits. 1-6 - Taiki Uemura, SungSoo Kim, Shinyoung Chung, Jong-Ho Lee:
Cost-Effective Assessment of Neutron-Induced SER Using Single Proton Irradiation Test with Fixed Correlation Factor. 1-6 - Jifa Hao, Haitham Hamed:
Enhancing Reliability of Power IC and Power Devices for AI Hardware: Addressing Gate Oxide Defects, Transient Voltage Overshoot, and BVDss Instability. 1-6 - Mohammad Fathi, Md Abdullah Al Mamun, Rodolfo A. Rodriguez-Davila, Shumiya Alam, Jongchan Kim, Tanvir Haider Pantha, Milan Pesic, Manuel Quevedo-Lopez, Kyeongjae Cho, Sourav Dutta, Chadwin D. Young:
Investigation of the Impact of Hydrogen Defects on the VT shift in Back-Gate IGZO TFTs. 1-5 - C. H. Sung, M. J. Huang, Y. J. Li, Y. T. Yang, Y. R. Liu, P. H. Shih, J. C. Guo, Steve S. Chung:
Resistive-Gate RAM: An 1TnR Architecture Feasible for Scaling Beyond 16nm CMOS Generation. 1-6 - Jihyun Kim, Hyeonsik Choi, Jiyong Woo:
Impact of Non-ideal Reliability Characteristics of SiOx p-Bit for Complex Optimization Problem Solver. 1-6 - Jui-Shen Chang, Chung-Yu Chiu, Ching-Ting Liu, Chen-Nan Chiu, Yao-Chun Chuang, Ryan Lu:
Electromigration Performance of Cu Bumps in Various Configurations. 1-6 - Seung Yup Jang, Justin Lynch, Adam J. Morgan, Dinuth C. Y. B. Yapa Mudiyanselage, Woongje Sung, Limeng Shi, Anant K. Agarwal:
Investigation of Screening Methods for 1.2 kV 4H-SiC MOSFETs Using High Gate Voltage Pulses and Unclampled Inductive Switching. 1-6 - Yixin Qin, Saikat Chakraborty, Zijian Zhao, Sizhe Ma, Moonyoung Jung, Kijoon Kim, Suhwan Lim, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Vijaykrishnan Narayanan, Jaydeep P. Kulkarni, Kai Ni:
Retention Analysis of Ferroelectric FETs with Gate-Side Injection for Vertical NAND Storage. 1-6 - Karansingh Thakor, Rai Sambhav, Rashmi Saikia, Souvik Mahapatra:
TCAD Based Isolation of Self-Heat Enhanced HCD and NBTI in GAA SNS p-FET. 1-7 - Weiman Yan, Ernest Wu, Elyse Rosenbaum:
New Loss Function for Learning Dielectric Thickness Distributions and Generative Modeling of Breakdown Lifetime. 1-9 - Mitesh Goyal, Mukesh Chaturvedi, Harihar Nath, Mahesh Vaidya, Mayank Shrivastava:
Novel Trigger Circuit & SCR Device Co-Engineering Based Local (I/O-VSS & I/O-VDD) ESD Clamp Concepts with Improved Latch-Up Susceptibility, Lower Leakage and Lower Capacitance for Ultra High Speed I/Os. 1-8 - Lyes Ben Hammou, François Grandpierron, Elodie Carneiro, Katir Ziouche, Etienne Okada, Farid Medjdoub, Gilles Patriarche:
Effect of High Temperature RF Stress on the Trapping Behavior of Carbon Doped AlN/GaN/AlGaN HEMTs. 1-8 - Shruti Pathak, Aarti Rathi, Abhisek Dixit, P. Srinivasan, Oscar H. Gonzalez:
Impact of Hot-Carrier Degradation on Flicker Noise (1/f) in 45-nm PD-SOI Floating-Body NFETs. 1-6 - Ernest Y. Wu, Paul Jamison, Steven Consiglio, Takaaki Tsunomura, Takashi Ando:
Modulating Competition between Defect Generation and Annihilation in Dielectric Breakdown Showing a Full Range of Reverse, Diminishing, and Forward Area Scaling Trends. 1-8 - Roy K.-Y. Wong, Yeke Liu, Po-Yen Huang, Haoran Wang, Chun-Hao Lai, Chun Chuang, Xue-Han Chen, Shawn S. H. Hsu, Chih-Kai Chang, Ming-Cheng Lin:
Critical Role of Holes in Reliability, Robustness and Stability of GaN-on-Si HEMTs for Power and RF Applications. 1-10 - Rino Micheloni, Luca Crippa, Alessia Marelli, Lorenzo Zuolo, Piero Olivo, Cristian Zambelli:
Leveraging Large-Scale TLC 3D NAND Flash Characterization to Investigate Early Lifetime Reliability of SSDs through Extreme Value Statistics. 1-6 - Stephanie Bourbouse:
Modelling predictive reliability of Systems embedding EEE parts (Invited): The FIDES method adapted for Space applications. 1-7 - Jiho Lee, Jiwon Kim, Seyoung Kim, Young-Yun Lee, Kanghyun Seo, Jung Yun Choi:
Estimation of Remaining Useful Life from the Aging Degradation in IC Performance Parameters. 1-6 - K. Vishwakarma, K. Lee, Anastasiia Kruv, Adrian Vaisman Chasin, Michiel J. van Setten, C. Pashartis, Oguzhan O. Okudur, M. Gonzalez, Nouredine Rassoul, A. Belmonte, Bem Kaczer:
Impact of Mechanical Stress on IGZO TFTs: Enhancing PBTI Degradation. 1-6 - Taiki Uemura, Jongyul Kim, Sungsoo Kim, Shinyoung Chung, Jong-Ho Lee:
Comprehensive Study of Thermal Neutron SER in Bulk-Planar, Bulk-FinFET, FDSOI-Planar, and Bulk-GAA Technology, Evaluated at HANARO. 1-7 - Sara Vecchi, Vikram Bhosle, Andrea Palmieri, Davide Cornigli, Fabrizio Buscemi, Andrea Padovani, Deven Raj, Andrew Cockburn, Lucien Date, Gaurav Thareja, Federico Nardi, Luca Larcher:
A Novel D2 Plasma Treatment for Defect Passivation: From Modeling to Process Optimization. 1-5 - Jungyoun Kwak, Chengyang Zhang, Gyujun Jeong, Omkar Phadke, Sharadindu Gopal Kirtania, Junmo Lee, Suman Datta, Shimeng Yu:
Machine Learning-Assisted Modeling of AC Stress-Induced Bias Temperature Instability in Oxide Channel Transistors for 2T Gain Cell eDRAM. 1-4 - Mohammed El Amrani, Thomas Kaltsounis, David Plaza Arguello, Stéphane Moreau, Hala El Rammouz, Matthew Charles, Julien Buckley, Daniel Alquier:
Numerical and Thermal Analysis of Reverse Leakage Current of Pseudo-Vertical GaN p-n Diodes Grown with Selective Area Growth. 1-6 - Guido T. Sasse, Dieter Lipp:
Drain-side TDDB for RF applications. 1-6 - Yizhan Liu, Chenalin Ye, Yuanzhao Hu, Shuhan Wang, Zheng Zhou, Xiaoyan Liu:
Opposite Impact of Temperature Difference Direction on Electromigration Failure in N-type Versus P-type Metal. 1-4 - C.-T. Chen, T. Irisawa, S. Migita, Y. Morita, H. Ota, T. Maeda, K. Toprasertpong:
Impact of Hydrogen Incorporation on Performance and PBS Instability in Ultrathin ALD-InOxFETs. 1-6 - Ruibin Zhou, Yuhan Wang, Jian Huang, Zecheng Xu, Xianping Liu, Xinrui Zhang, Zhiyi Yu:
A Half-Bit-Per-Cell Strategy for Enhancing Flash Memory Reliability in Harsh Environments. 1-9 - Arnav Shaurya Bisht, Souvik Mahapatra:
The Importance of Gate Length Choice on NBTI Qualification in GAA-SNS FETs Under Normal and Overclocking Conditions. 1-4 - Abygaël Viey, William Vandendaele, P. Kouaté Wafo, Xavier Garros, Luigi Basset, F. Ponthenier, Joris Lacord, R. Fillon, X. Federspiel, D. Roy, S. Joblot, Dominique Golanski:
Influence of Process Integration on pBTI Degradation in Analog SOI nMOSFETs. 1-6 - Yuanyang Guo, Robin Degraeve, Pablo Saraza-Canflanca, Ben Kaczer, Erik Bury, Ingrid Verbauwhede:
Effects of Temperature and Device-to-Device Variability in pFET-Based Bias Temperature Instability Reservoir Computing. 1-7 - Minji Shon, Chinsung Park, Prasanna Venkatesan Ravindran, Lance Fernandes, Kijoon Kim, Jongho Woo, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Suman Datta, Asif Khan, Shimeng Yu:
Modeling Dynamic Interplay Between Charge Traps and Polarization for Memory Window Enhancement in Gate Injection Layers. 1-5 - N. Choudhury, S. Lee, D. Son, G. Yang, G.-J. Kim, N.-H. Lee, Y. C. Hwang, SB. Ko, S. Pae:
A Critical Investigation of Hot Carrier Degradation in Low VTNMOSFETs in DRAM. 1-4 - Nicholas J. Pieper, Y. Xiong, Jenna B. Kronenberg, R. Fung, Dennis R. Ball, Bharat L. Bhuva:
Power and SER Performance of Flip-Flop Cells with Low-Leakage Options. 1-5 - Mikaël Cassé, Flávio Enrico Bergamaschi, Quentin Berlingard:
Self-Heating Effects in FDSOI Transistors at Cryogenic Temperature: A Spatial and Temporal Experimental Study (Invited). 1-7 - Hajdin Ceric:
Electromigration in Gold: Challenges and Possibilities (Invited). 1-10 - Christopher J. Clymore, Matthew Guidry, Boyu Wang, Emre Akso, Henry Collins, Robert Hamwey, Nirupam Hatui, Stacia Keller, Umesh K. Mishra:
A new S-parameter Deep Level Transient Spectroscopy (S-DLTS) Method: Development and Qualification. 1-5 - Dishant Sangani, Michiel Vandemaele, Stanislav Tyaginov, Erik Bury, Ben Kaczer, Georges G. E. Gielen:
A Carrier-Energy-Based Compact Model for Hot-Carrier Degradation Implemented in Verilog-A. 1-8 - Shouzhuo Yang, Yannick Raffel, Ricardo Olivo, Raik Hoffmann, David Lehninger, Oliver Ostien, Maik Simon, Konrad Seidel, Thomas Kämpfe, Maximilian Lederer, Shouzhuo Yang, Gerald Gerlach, Thomas Kämpfe:
Defect Dynamics and Flicker Noise in Ferroelectric Field Effect Transistors at Cryogenic Temperatures. 1-4 - Shida Zhang, Wei-Chun Wang, Carlos Tokunaga, Saibal Mukhopadhyay:
A Comparative Analysis of Aging Effects on Computing-in-Memory Systems in 28nm CMOS. 1-6 - Jae-Gyung Ahn, Md Malekkul Islam, Gamal Refai-Ahmed, Bhoomika Devaru Hedge, Guan-Yu Lin, Po-Chiao Chang, Ping-Chin Yeh, Jonathan Chang:
Estimation of Product Lifetime with Highly Varying Die Temperature. 1-6 - Utpreksh Patbhaje, Rupali Verma, Mayank Shrivastava:
Small Signal Analysis of Degradation and Breakdown in TMD FETs. 1-8 - Andrea Padovani, Nashrah Afroze, Yu-Hsin Kuo, Priyankka Gundlapudi Ravikumar, Prasanna Venkatesan Ravindran, Mengkun Tian, Asif Khan, Jihoon Choi, Jun Hee Lee, Luca Larcher, Gaurav Thareja:
Multi-Scale Modeling-Driven Material to Device Co-Optimization of Ferroelectric Capacitors with Oxygen Reservoir Layer (ORL) for Improved Endurance. 1-6 - Luigi Pantisano, K. Joshi, Z. Chbili, E. Frantz, S. M. Ramey, J. Hicks, H. Le, K. M. Foley, K. Pasumarthi, J. Sebot:
Microprocessor Switching Activity Translation to AC Gate Oxide Wearout: Does it Matter? INTEL4 Meteor Lake Chip Activity Case Study. 1-6 - Chun-An Shih, Mir Md Fahimul Islam, Sumi Lee, Peide D. Ye, Muhammad Ashraful Alam:
Asymmetric Reliability and Universality of Defect Formation in Oxide-Gated Ultra-Thin In2O3Vertical FETs for Monolithic 3-D Integration. 1-6 - B. Ayoub, G. Imbert, F. Belfis, T. Parrassin, Sébastien Gallois-Garreignot, L. Mischler, Geneviève Duchamp, Hélène Frémont:
Investigation Into the Moisture Degradation Mechanism of Integrated Stacks Using New Moisture Sensor Design. 1-7 - Ki Han Kim, Woo Cheol Shin, Ui Do Ji, Yeong Kwon Kim, Namju Kim, Han Byeol Oh, Sang Hyun Oh, Byung Chul Jang:
Understanding of Incremental Step Pulse Programming (ISPP) Slope Degradation in 3D NAND and its Band-Engineered Trap Layer Solution. 1-6 - Sinai Galvan, Daniel J. D. Sullivan:
Enhanced Dye and Pull Analysis for CSP Package Types. 1-4 - Tzu-Hao Chiang, Chien-Yao Huang, Jam-Wem Lee, Kuo-Ji Chen, Ming-Hsiang Song:
Machine Learning Powered Single Event Latch-up (SEL) Failure Rate Prediction Methodology in Advanced Bulk FinFET Technology. 1-5 - Hunbeom Shin, Giuk Kim, Sujeong Lee, Geonhyeong Kang, Hyojun Choi, Taeseung Jung, Sanghun Jeon, Hyung-Jun Kim, Jinho Ahn:
Record-Low EOT(3.6Å) & Jleak(7×10-8A/cm2@0.8V) HZO by Dielectric-Selective Microwave Annealing. 1-9 - Chuan Song, Wen Yang, Weijian Wang, Huaxing Jiang, Sheng Jiang, Xiang Yi, Bin Li, Zhao Qi:
Bidirectional Threshold Voltage Shift After Positive Bias Temperature Instability of p-GaN HEMTs at Cryogenic Temperature. 1-5 - Andrea Natale Tallarico, M. Millesimo, U. Ibrar, Enrico Sangiorgi, Claudio Fiegna, T.-Y. Yang, J.-S. Wu, H. Iwai, E.-Y. Chang:
HTGB and DGS Reliability Assessment of e-mode GaN-HEMTs with Ferroelectric Gate Stack. 1-6 - Jay Singh, Suman Gora, V. P. K. Bhashini, Amab Datta:
Enhancing Bias Stress Stability and VTH Recovery of n-Type SnO2: Ge Thin Film Transistor. 1-5 - R. Villa, A. Mancaleoni:
A Comprehensive Reliability Approach to Heterogeneous Integration in Power Packaging (Invited). 1-5 - Yuanqin Liu, Kelly Prochaska, Dogancan Sari, Daniel J. D. Sullivan:
Failure Analysis of Particle Contamination in Battery. 1-5 - Vamsi Mulpuri, Vishank Talesara, Kailun Zhong, Siddarth Sundaresan, Navitas Semiconductor:
Dynamic Reverse Bias Reliability Testing of SiC MOSFETs. 1-4 - Gang-Jun Kim, Taehun You, Sewon Jeon, Seung Hwan Kwak, Hwangju Song, Shinhyung Kim, Nam-Jae Kim, Jaeyeop Ahn, Hyuk Park, Seonhaeng Lee, Nam-Hyun Lee, Young Hoon Cho, Sang Won Hwang, Yuchul Hwang, Seungbum Ko, Sangwoo Pae:
Reliability Characterization Using Accelerated Methods of 1Tb 9th-Gen VNAND for TLC/QLC applications. 1-4 - Susan Li:
Chip Scale Packaging and Its Failure Analysis Challenges (invited). 1-9 - J. Brewer, C. Nassar, A. Shorey, Y. Gu:
Demonstrated Reliability of the Ideal Switch® - Glass Based MEMS Device. 1-5 - Sizhe Ma, Saikat Chakraborty, Yixin Qin, Zijian Zhao, Jiahui Duan, Moonyoung Jung, Kijoon Kim, Suhwan Lim, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Vijaykrishnan Narayanan, Jaydeep P. Kulkarni, Kai Ni:
Investigating Read-After-Write Delay in Ferroelectric FET with Gate-Side Injection. 1-6 - Kenshin Yamauchi, Naoko Misawa, Satoshi Awamura, Masahiro Morimoto, Chihiro Matsui, Ken Takeuchi:
Conductance Variation-Assisted Adversarial Attack Robustness on 40nm TaOx-based ReRAM CiM. 1-6 - M. Millesimo, L. Valentini, Claudio Fiegna, Enrico Sangiorgi, Andrea Natale Tallarico, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot:
RTN Analysis of Schottky p-GaN Gate HEMTs Under Forward Gate Stress: Impact of Temperature. 1-7 - H. Park, G.-J. Kim, N.-J. Kim, J. Ahn, T. You, Y. Kang, M. Yoon, S. Lee, N.-H. Lee, S. Hwang, YC Hwang, SB. Ko, S. Pae:
Novel Linear Model for OFF-State Stress Causing Stand-By Current of Advanced VNAND Chip. 1-6 - V. Viollet, E. Esmanhotto, M. Allegra, Matteo Baldo, Guillaume Prenat, Lorena Anghel, X. Lecoq:
Temperature and Drift-Aware High-Level PCM-based Array Model for Reliable Hardware IMC Design. 1-4 - Roman Boldyrjew-Mast, Clemens Herrmann, Xing Liu, Xupeng Li, Thomas Basler:
Influence of the Gate Switching Instability Induced Threshold Voltage Drift on the Hard Switching Behavior of 1.2 kV SiC MOSFETs. 1-8 - Ashley Hua, Huixian Wu:
Advanced Multivariate Outlier Detection for Automotive Road-to-Zero Defect Strategy. 1-6 - N. Piluso, R. Anzalone, E. Fontana, G. Maira, G. Bellocchi, C. Calabretta, S. Alessandrino, F. Vento, C. Nania, Salvatore Adamo, Elisa Vitanza, N. Bentivenga, A. Russo, G. Arena, A. Severino:
Influence of Starting Material on Final Device in SiC Power Technologies. 1-5 - Kenshin Yamauchi, Naoko Misawa, Hisashi Shima, Yasuhisa Naitoh, Hiroyuki Akinaga, Chihiro Matsui, Ken Takeuchi:
Read Voltage Dependency of Random Telegraph Noise in the Intermediate State of TaOx-based ReRAM. 1-6 - Dejiang Mu, Pan Liu, Zijian Zhou, Zifei Cai, Jian Zhang, Kanhao Xue, Zhigang Ji, Xiangshui Miao, Xingsheng Wang:
Multi-Level RTN with Certain Regularities in Oxide-RRAM: Experiments, Defect Dynamics and 3D Multi-Physics Modeling. 1-6 - Wenhao Song, J. Joshua Yang:
Analog Computing with High Precision and Reliability (Invited). 1-7 - Francesco de Pieri, Manuel Fregolent, Marco Saro, Andrea Carlotto, Mirco Boito, Carlo De Santi, Fabiana Rampazzo, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni:
Comprehensive Analysis of Deep level Effects and in-situ Photoionization in 0.15 $\mu \mathrm{m}$ buffer-free AIGaN/GaN HEMTs for RF applications. 1-5 - Y. H. Chen, Yu-Sheng Chen, Yi Ching Ong, Y. L. Chu, Kuo-Feng Huang, Yuan-Jen Lee, C. Y. Wang, C. Y. Wu, W. H. Chuang, Allen Y. J. Wang, K. C. Huang, Harry Chuang:
Failure Mechanism and Unified Endurance Model of Embedded MRAM Towards Cache Application. 1-6 - Md. Asaduz Zaman Mamun, Greta Terzariol, Luke Fortner, Amar Mavinkurve, Muhammad Ashraful Alam:
Demystifying the Use of IC Plastic packages for Space Applications. 1-4 - K. Niskanen, Arto Javanainen, Heikki Kettunen, C. Cazzaniga, M. Kastriotou, C. Frost:
Gate Current Stress for Detecting Neutron-Induced Degradation in SiC Power MOSFETs. 1-5 - Prasanna Venkatesan Ravindran, Andrea Padovani, Lance Fernandes, Priyankka Gundlapudi Ravikumar, Chinsung Park, Huy Tran, Zekai Wang, Hari Jayasankar, Amrit Garlapati, Taeyoung Song, Hang Chen, Winston Chern, Zheng Wang, Kijoon Kim, Jongho Woog, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Shimeng Yu, Suman Datta, Luca Larcher, Gaurav Thareja, Asif Khan:
Enhanced Memory Performance in Ferroelectric NAND Applications: The Role of Tunnel Dielectric Position for Robust 10-Year Retention. 1-7 - C. Fohn, F. Zharfan, Emmanuel Chery, Kris Croes, Michele Stucchi, V. Afanas'ev:
Impact of Al-doping on Al: HfO2Dielectric Reliability in MIM Capacitors. 1-8 - Ken Shono, Yoshiyuki Kotani, Ronald Barr, Likun Shen, Steven Wienecke:
Cascode GaN Power Transistor Robust for Single Event Burnout Caused by Neutron Irradiation. 1-4 - M. Krilcic, Adrijan Baric, S.-H. Lin, Tomislav Markovic, N. Pantano, Marko Simicic:
I/O Circuit and Sub-5V ESD Protection for Advanced Bonding Interfaces. 1-6 - Luca Oldani, Silvia Brazzelli, Mattia Rossetti:
Hot-Hole Gate Current and Degradation in N-Type Lateral Drift MOSFETs: Characterization and TCAD Analysis. 2 - Narendra Parihar, Elias Frantz, Misagh Rostami-asrabad, Stephen M. Ramey:
The Voltage Dependence of NBTI: Resolution of Controversy Surrounding Power Law vs. Exponential. 2 - S. Wienecke, R. Barr, W. Cruse, A. Wong, L. Shen, P. Smith, K. Shono, R. Lal, G. Gupta, Davide Bisi, C. Neufeld:
3 Factor Accelerated Lifetime Testing in Lateral GaN Power HEMTs: A Tutorial. 3 - Kamal Varadarajan, Alexei Ankoudinov, Robert Yang, Alexey Kudymov, Bhawani Shankar, Karthick Murukesan, Sorin Georgescu:
Reliability Qualification of 1250V Lateral GaN HEMTs for High Reliability Industrial Applications (Invited). 3 - Curtis Jacob Ritter, Dustin Kendig, Sean Duffy, Daniel J. D. Sullivan:
Using Thermal Reflectance Analysis with the Microsanj for Open Defect Localization. 4 - Prasun Raha:
Safety in Memory Architectures for Autonomy (Invited). 4 - Liangshan Chen, Yinghong Zhao, Ki-Don Lee, Manisha Sharma, Joonah Yoon, Timothy Davis, Kayla N. Sanders, Myungsoo Yeo, Amado Longoria, Shou-Liang Zhang, Ju Kwang Kim, Dung Dau, Mukyeng Jung:
The Impact of Silicon Concentration on the Reliability of Tungsten Silicide. 5 - M. Noguchi, A. Koyama, T. Iwamatsu, H. Watanabe, N. Miura:
Threshold Voltage Shift and Its Turnaround of SiC MOSFETs Under Positive and Negative Oxide Electric Field Stresses (Invited). 5 - Jun-Yu Huang, Clement Huang, Kun-Chung Huang, Da-You Yang, Hsin-Jou Chuang, Yi-Wen Lee, Eliot Chen, Jen-Hao Lee, Ryan Lu:
Comprehensive Study of Non-Conducting Stress Characteristics in Ultra-Scaled FinFET. 6 - Tahmida Islam, Junkyu Kim, Hanzhao Yu, Zheng Xue, Jacob Xing, Chris H. Kim, Jiesi Xing, Christopher Elash, Peiman Pour Momen, Li Chen:
Aging Characterization at Cryogenic Temperature with Synthesizable Odometers in 12NM and 28NM. 7 - Manu Shamsa, John D. Martin, Mariano Phielipp, Thiago Macieira, Loganathan Lingappan, Brad Kelly, David Lerner, Michael Tucknott, Ethan Hansen:
Improved Silent Data Error Detection Through Test Optimization Using Reinforcement Learning. 8 - Yan Li:
Fault Isolation and Failure Analysis Challenges in Advanced Packages (Invited). 8 - Mitsuhiko Igarashi, Yuuki Uchida, Keiichiro Iwamoto, Yoshio Takazawa, Yasumasa Tsukamoto:
Leakage Current Fluctuation of On/Off-State Stress in 3 nm Process and its Guard-band Compensation. 9 - F. Libano, S. Mattord, B. Gran, Ricardo Ascázubi:
Post-Silicon Validation of Static Lockstep Mode on Intel® Xeon® Processor E-Core Architecture. 10 - Yuhang Yang, Zongwei Wang, Haoran Wang, Lin Bao, Gaoqi Yang, Yimao Cai, Ru Huang:
Investigation and Mitigation of Transistor Induced Reliability Issues in 40NM RRAM Array. 10 - Milan Pesic:
Reliability and Integration Challenges Underlying New Material Introduction into Memory Technology (Invited). 11 - Y. K. Chang, P. J. Liao, Y. C. Chang, C. H. Chou, Y. S. Liu, J. H. Lee, Ryan Lu, Y. K. Hwang:
Exploring AC Time-Dependent Dielectric Breakdown (TDDB) Through Frequency Noise Analysis. 11 - S. L. Longato, Davide Favero, Arno Stockman, Arianna Nardo, Piet Vanmeerbeek, Marnix Tack, Gaudenzio Meneghesso, Enrico Zanoni, C. De Santi, Matteo Meneghini:
Vth and Ron Instability of GaN Power HEMTs with pGaN Gate Under Negative Gate Bias. 22 - Mohammad Ateeb Munshi, Mehak Ashraf Mir, Mayank Shrivastava:
Evidence of Back-Gating and its Impact on Breakdown in GaN-on-Si HEMTs with Carbon Doped Buffer Under Pulsed Conditions. 24 - Rasik Rashid Malik, Simran R. Karthik, Vipin Joshi, Rajarshi Roy Chaudhuri, Mohammad Ateeb Munshi, Mehak Ashraf Mir, Saniya Syed Wani, Mayank Shrivastava:
Experimental Validation of Buffer Traps-Driven Electric Field Dynamics Governing Breakdown and Leakage Trends in AlGaN/GaN Heterostructures. 26 - Kartika Chandra Sahoo, Rakesh Ranjan, Ki-Don Lee, Junehwan Jonathan Kim, Robert Moeller, Pavitra Ramadevi Perepa, John A. Frerich, Ju Kwang Kim, Dung Dau, Mukyeng Jung:
Impact of Bi-Layer Gate Stack and Thickness on Low Frequency TDDB in FinFET and Planar Devices. 29 - Chang-Fu Han, Jia-Ming Yang, Chia-Hua Chang, Yu-Sheng Lin, Jyun-Lin Wu, Yao-Chun Chuang, Ryan Lu:
Characterization of Cu and SiCN Adhesion in BEOL Interconnections. 39 - Danee Cho, Jin-seok Kim, Taejoong Kim, Seung-Kwon Noh, Junho Song, Junsung Kim, Seungchan An, Yonghui Eum:
Effect of TSV - Keep Out Zone on BEOL Reliability of HBM3E. 40 - Hariram Mohanram, Harikrishnan Kumarasamy, Choong-Un Kim, Young-Joon Park, Sudarshan Prasad, Srikanth Krishnan:
Thermomechanical Fatigue in Two Level Cu Interconnects Under Pulsing Peak Current. 42 - Sanghyeon Jeon, Ilgeun Jung, Seungjin Kim, Sangki Kim, Yangkeun Park, Seungbum Kim, Boyoung Song, Hyodong Ban:
Study on the Measurement Method of Interface Resistance in HBM-DRAM: Novel Monitoring Method for Bump Contact Resistance. 49 - Hsi-Yu Kuo, Yu-Lin Chu, Chien-Jen Wang, Steven Sze Hang Poon, Chun-Wei Yao, Hsuan Chu, Yi-Ching Chen, Yi-Lun Chen, Yu-Ti Su, Chia-Lin Hsu, Tsung-Yuan Chen, Te-Liang Li, Ray Huang, Kuo-Ji Chen, Ming-Hsiang Song, Kejun Xia, Ryan Lu:
Well-Charging Damage to Capacitors Connected Between VDD and VSS in a Single Power Domain. 52 - O. H. Gonzalez, P. Srinivasan, S. Cimino, K. Shanbhag, S. Jain:
Improved HCI in SOI-based next generation RF Power Amplifier FETs using device optimization approach. 54 - Songyi Jiang, Junjie Li, Hong Yang, Qianqian Liu, Yunfei Shi, Shuai Yang, Runsheng Wang, Xiaolei Wang, Jun Luo, Wenwu Wang:
NBTI Improvement of HfO2/TiN Gated pMOSFET by Low-Temperature Remote Hydrogen Plasma Treatment. 56 - Aarti Rathi, Barry J. O'Sullivan, R. ElKashlan, B. Kazemi Esfeh, Arturo Sibaja Hernandez, Hao Yu, AliReza Alian, Sachin Yadav, Uthayasankaran Peralagu, Adrian Vaisman Chasin, Bertrand Parvais, Nadine Collaert:
Evolution of GaN HEMT Small-Signal Parameters During Semi-on State for RF/MM-Wave Applications. 71 - P. Srinivasan, Oscar H. Gonzalez, J. Lestage, Stephen Moss, Oscar D. Restrepo, S. Ludvik:
A New Methodology to Evaluate Die-Package Level Load-Pull and Ruggedness for RF Long Term Aging for 5G Applications. 72 - Yi Yang, Hao Yu, Meng-Che Tsai, Wei-Tung Lin, Ying-Chun Kuo, Barry J. O'Sullivan, Aarti Rathi, Amratansh Gupta, Sachin Yadav, AliReza Alian, Uthayasankaran Peralagu, Bertrand Parvais, Nadine Collaert, Tian-Li Wu:
Toward Understanding Stability of RF MIS-HEMTs Under ON/SEMI-ON/OFF-State Pulses with Scaling in-situ SiN Thicknesses. 73 - Seongkyung Kim, Eunyu Choi, Jinyoung Kim, Junkyo Jeong, Jihun Ryu, Myungsoo Yeo, Taiki Uemura, Shin-Young Chung, Jong-Ho Lee:
Reliability Impacts of Tapered Nanosheets and Localized Layout Effects in MBCFETs Fabricated with 2NM Logic Technology Featuring GAA. 83
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