"29.2 A 0.021µm2 High-Density SRAM in Intel-18A-RibbonFET ..."

Xiaofei Wang et al. (2025)

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DOI: 10.1109/ISSCC49661.2025.10904657

access: closed

type: Conference or Workshop Paper

metadata version: 2025-04-25

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Xiaofei Wang, Yusung Kim, Gwanghyeon Baek, Kunal Girish Bannore, Kaushal Dave, Arash Joushaghani, Narae Kang, Minwoo Ko, Anandkumar Mahadevan Pillai, Hema Chandra Prakash Movva, Gyusung Park, Muktadir Rahman, Seenivasan Subramaniam, Vinay Vashishtha, Teng Yang, Zheng Guo, Eric A. Karl:
29.2 A 0.021µm² High-Density SRAM in Intel-18A-RibbonFET Technology with PowerVia-Backside Power Delivery. ISSCC 2025: 494-496

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