"A 0.094um2 high density and aging resilient 8T SRAM with 14nm ..."

Kyung-Hoae Koo et al. (2015)

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DOI: 10.1109/VLSIC.2015.7231282

access: closed

type: Conference or Workshop Paper

metadata version: 2024-04-26

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Kyung-Hoae Koo, Liqiong Wei, John Keane, Uddalak Bhattacharya, Eric A. Karl, Kevin Zhang:
A 0.094um² high density and aging resilient 8T SRAM with 14nm FinFET technology featuring 560mV VMIN with read and write assist. VLSIC 2015: 266-

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