"A 6.05-Mb/mm2 16-nm FinFET double pumping 1W1R 2-port SRAM with ..."

Makoto Yabuuchi et al. (2016)

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DOI: 10.1109/VLSIC.2016.7573460

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-21

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Makoto Yabuuchi, Yohei Sawada, Toshiaki Sano, Yuichiro Ishii, Shinji Tanaka, Miki Tanaka, Koji Nii:
A 6.05-Mb/mm² 16-nm FinFET double pumping 1W1R 2-port SRAM with 313 ps read access time. VLSI Circuits 2016: 1-2

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