"Fluorine-free Word Line Molybdenum Process for Enhancing Scalability and ..."

T. Fukushima et al. (2024)

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DOI: 10.1109/VLSITECHNOLOGYANDCIR46783.2024.10631406

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-17

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T. Fukushima, T. Kashima, S. Seto, H. Ohtori, M. Kato, K. Katou, H. Takehira, Y. Sugawara, Z. Zhu, K. Hara, R. Osanai, T. Beppu, H. Tahara, T. Ishiku, K. Takahashi, T. Ariga, Y. Ueda, Y. Matamura, Y. Mukae, N. Takeguchi, Y. Maruyama, R. Nishikawa, H. Kitagawa, J. Asakawa, Y. Uchiyama, K. Ohuchi, K. Sekine:
Fluorine-free Word Line Molybdenum Process for Enhancing Scalability and Reliability in 3D Flash Memory. VLSI Technology and Circuits 2024: 1-2

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