"Effect of Conduction Band Edge States on Coulomb-Limiting Electron ..."

Hiroshi Oka et al. (2022)

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DOI: 10.1109/VLSITECHNOLOGYANDCIR46769.2022.9830505

access: closed

type: Conference or Workshop Paper

metadata version: 2023-06-26

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Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, Takahiro Mori:
Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic MOSFET Operation. VLSI Technology and Circuits 2022: 334-335

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