"A Novel Method for Extracting Asymmetric Source and Drain Resistance in ..."

S. W. Yoo et al. (2024)

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DOI: 10.1109/VLSITECHNOLOGYANDCIR46783.2024.10631544

access: closed

type: Conference or Workshop Paper

metadata version: 2025-03-03

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S. W. Yoo, Y. Lee, W. J. Jung, H. Kim, S. Byeon, M. Kim, J. Lee, T. Lee, M. J. Hong, Y. G. Song, S. Lee, M. Terai, K. J. Yoo, C. Sung, W. Lee, M. H. Cho, D. Kim, D. Ha, S. Ahn, J. H. Song:
A Novel Method for Extracting Asymmetric Source and Drain Resistance in IGZO Vertical Channel Transistors. VLSI Technology and Circuits 2024: 1-2

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