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"Experimental Demonstration of An Inversion-Type Ferroelectric Capacitive ..."
Zuopu Zhou et al. (2022)
- Zuopu Zhou, Leming Jiao, Jiuren Zhou, Zijie Zheng, Yue Chen, Kaizhen Han, Yuye Kang, Xiao Gong:
Experimental Demonstration of An Inversion-Type Ferroelectric Capacitive Memory and its 1 kbit Crossbar Array Featuring High CHCS/CLCS, Fast Speed, and Long Retention. VLSI Technology and Circuits 2022: 357-358
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