"Origin of Low-Frequency Noise in Si n-MOSFET at Cryogenic Temperatures: ..."

Hiroshi Oka et al. (2023)

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DOI: 10.1109/ACCESS.2023.3327731

access: open

type: Journal Article

metadata version: 2023-11-13

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Hiroshi Oka, Takumi Inaba, Shunsuke Shitakata, Kimihiko Kato, Shota Iizuka, Hidehiro Asai, Hiroshi Fuketa, Takahiro Mori:
Origin of Low-Frequency Noise in Si n-MOSFET at Cryogenic Temperatures: The Effect of Interface Quality. IEEE Access 11: 121567-121573 (2023)

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