"Eliminating Leakage in Volatile Memory with Anti-Ferroelectric Transistors."

Hongtao Zhong et al. (2022)

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DOI: 10.48550/ARXIV.2212.04973

access: open

type: Informal or Other Publication

metadata version: 2023-01-06

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  - journals/corr/abs-2212-04973
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  - https://dblp.org/rec/journals/corr/abs-2212-04973
Hongtao Zhong, Zijie Zheng, Kai Ni, Xiao Gong, Huazhong Yang, Xueqing Li:
Eliminating Leakage in Volatile Memory with Anti-Ferroelectric Transistors. CoRR abs/2212.04973 (2022)

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