"Design of 2T/Cell and 3T/Cell Nonvolatile Memories with Emerging ..."

Xueqing Li et al. (2019)

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DOI: 10.1109/MDAT.2019.2902094

access: closed

type: Journal Article

metadata version: 2025-06-17

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Xueqing Li, Juejian Wu, Kai Ni, Sumitha George, Kaisheng Ma, John Sampson, Sumeet Kumar Gupta, Yongpan Liu, Huazhong Yang, Suman Datta, Vijaykrishnan Narayanan:
Design of 2T/Cell and 3T/Cell Nonvolatile Memories with Emerging Ferroelectric FETs. IEEE Des. Test 36(3): 39-45 (2019)

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