"The Influence of the Stacked and Double Material Gate Structures on the ..."

Ehsanollah Fathi et al. (2005)

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DOI: 10.1093/IETELE/E88-C.6.1122

access: closed

type: Journal Article

metadata version: 2020-04-11

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Ehsanollah Fathi, Ashkan Behnam, Pouya Hashemi, Behzad Esfandyarpour, Morteza Fathipour:
The Influence of the Stacked and Double Material Gate Structures on the Short Channel Effects in SOI MOSFETS. IEICE Trans. Electron. 88-C(6): 1122-1126 (2005)

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