"A 16 nm 128 Mb SRAM in High-κ Metal-Gate FinFET Technology With ..."

Yen-Huei Chen et al. (2015)

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DOI: 10.1109/JSSC.2014.2349977

access: closed

type: Journal Article

metadata version: 2020-08-30

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Yen-Huei Chen, Wei-Min Chan, Wei-Cheng Wu, Hung-Jen Liao, Kuo-Hua Pan, Jhon-Jhy Liaw, Tang-Hsuan Chung, Quincy Li, Chih-Yung Lin, Mu-Chi Chiang, Shien-Yang Wu, Jonathan Chang:
A 16 nm 128 Mb SRAM in High-κ Metal-Gate FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications. IEEE J. Solid State Circuits 50(1): 170-177 (2015)

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