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"A 4.6 GHz 162 Mb SRAM Design in 22 nm Tri-Gate CMOS Technology With ..."
Eric Karl et al. (2013)
- Eric Karl, Yih Wang
, Yong-Gee Ng, Zheng Guo, Fatih Hamzaoglu, Mesut Meterelliyoz, John Keane, Uddalak Bhattacharya, Kevin Zhang, Kaizad Mistry, Mark Bohr:
A 4.6 GHz 162 Mb SRAM Design in 22 nm Tri-Gate CMOS Technology With Integrated Read and Write Assist Circuitry. IEEE J. Solid State Circuits 48(1): 150-158 (2013)
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