"A High-Density Metal-Fuse Technology Featuring a 1.6 V Programmable ..."

Sarvesh H. Kulkarni et al. (2016)

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DOI: 10.1109/JSSC.2015.2507786

access: closed

type: Journal Article

metadata version: 2024-04-26

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Sarvesh H. Kulkarni, Zhanping Chen, Balaji Srinivasan, Brian Pedersen, Uddalak Bhattacharya, Kevin Zhang:
A High-Density Metal-Fuse Technology Featuring a 1.6 V Programmable Low-Voltage Bit Cell With Integrated 1 V Charge Pumps in 22 nm Tri-Gate CMOS. IEEE J. Solid State Circuits 51(4): 1003-1008 (2016)

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