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"Deep levels and nonlinear characterization of AlGaN/GaN HEMTs on silicon ..."

Malek Gassoumi et al. (2009)

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DOI: 10.1016/J.MEJO.2007.02.005

access: closed

type: Journal Article

metadata version: 2020-08-05

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  - https://dblp.org/rec/journals/mj/GassoumiBGGM09
Malek Gassoumi, Jean-Marie Bluet, Christophe Gaquière, Gérard Guillot, Hassen Maaref:
Deep levels and nonlinear characterization of AlGaN/GaN HEMTs on silicon carbide substrate. Microelectron. J. 40(8): 1161-1165 (2009)

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