default search action
Google
Google Scholar
Semantic Scholar
Internet Archive Scholar
CiteSeerX
ORCIDMicroelectronics Journal, Volume 40
Volume 40, Number 1, January 2009
- Ramdane Mahamdi, Laurent Saci, Farida Mansour, Pierre Temple-Boyer, Emmanuel Scheid, Laurent Jalabert
:
Boron diffusion and activation in polysilicon multilayer films for P+ MOS structure: Characterization and modeling. 1-4 - Zahra Arefinia, Ali A. Orouji:
Novel attributes in scaling issues of carbon nanotube field-effect transistors. 5-9 - Abdelkader Aissat, Said Nacer, M. Bensebti, Jean-Pierre Vilcot:
Low sensitivity to temperature compressive-strained structure quantum well laser Ga1-xInxAs1-yNy/GaAs. 10-14 - Da Chen, Jingjing Wang, Dong Xu, Yafei Zhang:
The influence of the AlN film texture on the wet chemical etching. 15-19 - Andrea De Marcellis, Giuseppe Ferri, Nicola Carlo Guerrini, Giuseppe Scotti, Vincenzo Stornelli, Alessandro Trifiletti:
A novel low-voltage low-power fully differential voltage and current gained CCII for floating impedance simulations. 20-25 - Y. C. Gerstenmaier, W. Kiffe, Gerhard K. M. Wachutka:
Combination of thermal subsystems by use of rapid circuit transformation and extended two-port theory. 26-34 - Hogyoung Kim:
Al contacts to nanoroughened p-GaN. 35-38 - Xinquan Lai, Ziyou Xu, Yanming Li, Qiang Ye, Maoli Man:
A CMOS piecewise curvature-compensated voltage reference. 39-45 - Chien-Chan Su:
Carbon nanotube tips for surface characterization: Fabrication and properties. 46-49 - Tung-Te Chu, Huilin Jiang, Liang-Wen Ji, Wei-Shun Shih, Jingchang Zhong, Ming-Jie Zhuang:
Grain size effect of nanocrystalline ZnO on characteristics of dye-sensitized solar cells. 50-52 - Terry Yuan-Fang Chen, Haw-Long Lee:
Damping vibration of scanning near-field optical microscope probe using the Timoshenko beam model. 53-57 - Qiu-lin Tan, Wendong Zhang, Chenyang Xue, Jijun Xiong, Jun Liu, Jun-hong Li, Ting Liang:
Design, fabrication and characterization of pyroelectric thin film and its application for infrared gas sensors. 58-62 - Jungjin Yang, C. K. Suman, Changhee Lee:
Effect of type-II quantum well of m-MTDATA/alpha-NPD on the performance of green organic light-emitting diodes. 63-65 - Luís da Silva Zambom, Ronaldo Domingues Mansano, Ana Paula Mousinho:
Low-temperature deposition of silicon oxide and silicon nitride by reactive magnetron sputtering. 66-69 - Kun Cao, Zhanguo Chen, Ce Ren, Gang Jia, Tiechen Zhang, Xiuhuan Liu, Bao Shi, Jianxun Zhao:
Measurement of second-order nonlinear optical susceptibility of cBN crystal synthesized at high pressure and high temperature. 70-73 - Oleg Maksimov:
Structural and optical properties of the polycrystalline ZnO films synthesized via oxidative annealing of ZnSe/YSZ heterostructures. 74-77 - Lijun Tang, Kairui Zhang, Shang Chen, Guojun Zhang, Guowen Liu:
MEMS inclinometer based on a novel piezoresistor structure. 78-82 - Cuiping Jia, Jingran Zhou, Wei Dong, Weiyou Chen:
Design and fabrication of silicon-based 8×8 MEMS optical switch array. 83-86 - Qi Wang, Xiaomin Ren, Hui Huang, Yongqing Huang, Shiwei Cai:
Growth of BxGa1-xAs, BxAl1-xAs and BxGa1-x-yInyAs epilayers on (0 0 1)GaAs by low pressure metalorganic chemical vapor deposition. 87-91 - Yingtao Li, Su Liu:
Using different work function nanocrystal materials to improve the retention characteristics of nonvolatile memory devices. 92-94 - Elias Kougianos, Saraju P. Mohanty:
Impact of gate-oxide tunneling on mixed-signal design and simulation of a nano-CMOS VCO. 95-103 - Asghar Asgari, Elnaz Ahmadi, Manouchehr Kalafi:
AlxGa1-xN/GaN multi-quantum-well ultraviolet detector based on p-i-n heterostructures. 104-107 - X. D. Li, D. W. Zhang, Zhuo Sun, Y. W. Chen, Sumei Huang:
Metal-free indoline-dye-sensitized TiO2 nanotube solar cells. 108-114 - Rujia Zou, Guannan Zou, Chunrui Wang, Shaolin Xue, Jian Liu, Guangping Ren:
Improving the emission characteristics of a carbon nanotube film in NaCl electrolyte. 115-119 - Monem Krichen, Abdelaziz Zouari, Adel Ben Arab:
A simple analytical model of thin films crystalline silicon solar cell with quasi-monocrystalline porous silicon at the backside. 120-125 - Keivan Navi, Mohammad Hossein Moaiyeri, Reza Faghih Mirzaee, Omid Hashemipour, Babak Mazloom Nezhad:
Two new low-power Full Adders based on majority-not gates. 126-130 - Lei Gu, Zhengzheng Wu, Xinxin Li:
An wide-range tunable on-chip radio-frequency LC-tank formed with a post-CMOS-compatible MEMS fabrication technique. 131-136 - Sangsik Park, Hyungsoo Uh:
The effect of size on photodiode pinch-off voltage for small pixel CMOS image sensors. 137-140 - Mourad Fakhfakh:
A novel Alienor-based heuristic for the optimal design of analog circuits. 141-148 - Quandai Wang, Yugang Duan, Yucheng Ding, Bingheng Lu, Jiawei Xiang, Lianfa Yang:
Investigation on LIGA-like process based on multilevel imprint lithography. 149-155 - José M. de la Rosa, Rafael Castro-López, Alonso Morgado, Edwin C. Becerra-Alvarez, Rocío del Río, Francisco V. Fernández, Maria Belen Pérez-Verdú:
Adaptive CMOS analog circuits for 4G mobile terminals - Review and state-of-the-art survey. 156-176 - Jordi Sacristán-Riquelme, Fredy Segura-Quijano, Antoni Baldi, M. Teresa Osés:
Low power impedance measurement integrated circuit for sensor applications. 177-184 - Eoin Mc Gibney, John Barrett:
Application of a combined methodology for extraction of the electrical model of a lead frame chip-scale package. 185-192 - Sh. M. Eladl:
Modeling of ionizing radiation effect on optoelectronic-integrated devices (OEIDs). 193-196 - Shuguang Han, Baoyong Chi, Zhihua Wang:
New implementation of high linear LNA using derivative superposition method. 197-201
Volume 40, Number 2, February 2009
- Klaus Lischka, Andreas Waag, H. Mariette, Jörg Neugebauer:
Wide band gap semiconductor nanostructures for optoelectronic applications. 203 - Donat Josef As:
Cubic group-III nitride-based nanostructures - basics and applications in optoelectronics. 204-209 - Klaus Thonke, Martin Schirra, Raoul Schneider, Anton Reiser, Günther M. Prinz, Martin Feneberg, Johannes Biskupek, Ute Kaiser, Rolf Sauer:
The role of stacking faults and their associated 0.13 ev acceptor state in doped and undoped ZnO layers and nanostructures. 210-214 - Steffen Michaelis de Vasconcellos, Alexander Pawlis, Christoph Arens, Marina Panfilova, A. Zrenner, D. Schikora, Klaus Lischka:
Exciton spectroscopy on single CdSe/ZnSe quantum dot photodiodes. 215-217 - A. Dmytruk, I. Dmitruk, I. Blonskyy, Rodion V. Belosludov, Yoshiyuki Kawazoe, A. Kasuya:
ZnO clusters: Laser ablation production and time-of-flight mass spectroscopic study. 218-220 - Marina Panfilova, Alexander Pawlis, Christoph Arens, Steffen Michaelis de Vasconcellos, G. Berth, K. P. Hüsch, V. Wiedemeier, A. Zrenner, Klaus Lischka:
Micro-Raman imaging and micro-photoluminescence measurements of strain in ZnMgSe/ZnSe microdiscs. 221-223 - E. Latu-Romain, P. Gilet, G. Feuillet, P. Noel, J. Garcia, F. Lévy, A. Chelnokov:
Optical and electrical characterizations of vertically integrated ZnO nanowires. 224-228 - V. A. Karpyna, A. A. Evtukh, M. O. Semenenko, V. I. Lazorenko, G. V. Lashkarev, V. D. Khranovskyy, Rositsa Yakimova, D. A. Fedorchenko:
Electron field emission from ZnO self-organized nanostructures and doped ZnO: Ga nanostructured films. 229-231 - Junjie Zhu, Lasse Vines, Titta Aaltonen, Andrej Kuznetsov:
Correlation between nitrogen and carbon incorporation into MOVPE ZnO at various oxidizing conditions. 232-235 - Fabio Trani, M. Causà, Stefano Lettieri, Antonio Setaro, Domenico Ninno, Vincenzo Barone, Pasqualino Maddalena:
Role of surface oxygen vacancies in photoluminescence of tin dioxide nanobelts. 236-238 - J. Petersen, C. Brimont, M. Gallart, O. Crégut, G. Schmerber, P. Gilliot, B. Hönerlage, C. Ulhaq-Bouillet, J. L. Rehspringer, C. Leuvrey, Silviu Colis, A. Slaoui, A. Dinia:
Optical properties of ZnO thin films prepared by sol-gel process. 239-241 - M. Rosina, Pierre Ferret, Pierre-Henri Jouneau, Ivan-Christophe Robin, F. Lévy, G. Feuillet, M. Lafossas:
Morphology and growth mechanism of aligned ZnO nanorods grown by catalyst-free MOCVD. 242-245 - H. Bieber, G. Versini, S. Barre, J.-L. Loison, G. Schmerber, C. Ulhaq-Bouillet, Silviu Colis, A. Dinia:
Structural and magnetic study of hard-soft systems with ZnO barrier grown by pulsed laser deposition. 246-249 - Ivan-Christophe Robin, M. Lafossas, J. Garcia, M. Rosina, E. Latu-Romain, Pierre Ferret, P. Gilet, A. Tchelnokov, M. Azize, Joel Eymery, G. Feuillet:
Growth and characterization of ZnO nanowires on p-type GaN. 250-252 - Adrien Tribu, Gregory Sallen, Thomas Aichele, Catherine Bougerol, Régis André, Jean-Philippe Poizat, Serge Tatarenko, Kuntheak Kheng:
Bright CdSe quantum dot inserted in single ZnSe nanowires. 253-255 - Alexander Pawlis, Marina Panfilova, K. Sanaka, Thaddeus D. Ladd, Donat Josef As, Klaus Lischka, Yoshihisa Yamamoto:
Low-threshold ZnSe microdisk laser based on fluorine impurity bound-exciton transitions. 256-258 - Mahua Biswas, Enda McGlynn, M. O. Henry:
Carbothermal reduction growth of ZnO nanostructures on sapphire - comparisons between graphite and activated charcoal powders. 259-261 - B. Dierre, X. L. Yuan, Takashi Sekiguchi:
Effect of hydrogenation on the cathodoluminescence properties of ZnO single crystals. 262-264 - Y. Belghazi, M. Ait Aouaj, M. El Yadari, G. Schmerber, C. Ulhaq-Bouillet, C. Leuvrey, Silviu Colis, M. Abd-lefdil, A. Berrada, A. Dinia:
Elaboration and characterization of Co-doped ZnO thin films deposited by spray pyrolysis technique. 265-267 - A. El Manouni, M. Tortosa, F. J. Manjón, Miguel Mollar, Bernabé Marí, J. F. Sánchez-Royo:
Effect of annealing on Zn1-xCoxO thin films prepared by electrodeposition. 268-271 - Gun Hee Kim, Dong Lim Kim, Byung Du Ahn, Sang Yeol Lee, Hyun Jae Kim:
Investigation on doping behavior of copper in ZnO thin film. 272-275 - Miguel Mollar, M. Tortosa, R. Casasús, Bernabé Marí:
Electrodepositing ZnxMnyOz alloys from zinc oxide to manganese oxide. 276-279 - Arne Behrends, Andrey Bakin, Andreas Waag:
Investigation of ZnO nanopillars fabrication in a new Thomas Swan close coupled showerhead MOCVD reactor. 280-282 - Jae-Hoon Kim, Hooyoung Song, Eun Kyu Kim:
Study of magnetic impurity as defects in ZnO grown by pulsed laser deposition. 283-285 - C. Y. Zhu, C. C. Ling, G. Brauer, W. Anwand, W. Skorupa:
Deep-level defects study of arsenic-implanted ZnO single crystal. 286-288 - Markus R. Wagner, H. W. Kunert, A. G. J. Machatine, A. Hoffmann, P. Niyongabo, Johan Malherbe, J. Barnas:
Bound and free excitons in ZnO. Optical selection rules in the absence and presence of time reversal symmetry. 289-292 - Tomasz Krajewski, E. Guziewicz, Marek Godlewski, Lukasz Wachnicki, I. A. Kowalik, A. Wojcik-Glodowska, M. Lukasiewicz, K. Kopalko, V. Osinniy, M. Guziewicz:
The influence of growth temperature and precursors' doses on electrical parameters of ZnO thin films grown by atomic layer deposition technique. 293-295 - C. Chandrinou, Nikos Boukos, C. Stogios, A. Travlos:
PL study of oxygen defect formation in ZnO nanorods. 296-298 - Woo-Sun Lee, Gwon-Woo Choi, Yong-Jin Seo:
Surface planarization of ZnO thin film for optoelectronic applications. 299-302 - A. Kabir, Marina Panfilova, Alexander Pawlis, H. P. Wagner, Klaus Lischka:
Well-width dependence of the phase coherent photorefractive effect in ZnSe quantum wells. 303-305 - Anton Reiser, V. Raeesi, Günther M. Prinz, Martin Schirra, Martin Feneberg, U. Röder, Rolf Sauer, Klaus Thonke:
Growth of high-quality, uniform c-axis-oriented zinc oxide nano-wires on a-plane sapphire substrate with zinc oxide templates. 306-308 - Mafalda Macatrão, Marco Peres, C. P. L. Rubinger, M. J. Soares, L. C. Costa, F. M. Costa, Teresa Monteiro, Nuno Franco, Eduardo Alves, B. Z. Saggioro, Marcello R. B. Andreeta, A. C. Hernandes:
Structural and optical properties on thulium-doped LHPG-grown Ta2O5 fibres. 309-312 - Hooyoung Song, Jae-Hoon Kim, Eun Kyu Kim:
Studies of defect states of ZnO thin films under different annealing conditions. 313-315 - Joshua B. Halpern, A. Bello, J. Gilcrease, Gary L. Harris, Maoqi He:
Biphasic GaN nanowires: Growth mechanism and properties. 316-318 - Alexandru Müller, George Konstantinidis, Mircea Dragoman, Dan Neculoiu, Adrian Dinescu, M. Androulidaki, M. Kayambaki, Antonios Stavrinidis, Dan Vasilache, Cristina Buiculescu, I. Petrini, Athanasios Kostopoulos, D. Dascalu:
GaN membrane-supported UV photodetectors manufactured using nanolithographic processes. 319-321 - Carsten Buchheim, M. Röppischer, Rüdiger Goldhahn, G. Gobsch, Christoph Cobet, Christoph Werner, Norbert Esser, Armin Dadgar, Matthias Wieneke, Jürgen Bläsing, Alois Krost:
Influence of anisotropic strain on excitonic transitions in a-plane GaN films. 322-324 - L. Lahourcade, Julien Renard, Prem K. Kandaswamy, Bruno Gayral, M. P. Chauvat, Prem Ruterana, Eva Monroy:
PAMBE growth of (1 1 2- 2)-oriented GaN/AlN nanostructures on m-sapphire. 325-327 - D. Lagarde, Andrea Balocchi, Hélène Carrère, P. Renucci, T. Amand, S. Founta, H. Mariette, Xavier Marie:
Exciton spin dynamics in zinc-blende GaN/AlN quantum dots: Temperature dependence. 328-330 - L. Rigutti, Antonio Castaldini, Anna Cavallini:
Effects of internal fields on deep-level emission in InGaN/GaN quantum-well light-emitting diodes. 331-332 - S. Fündling, U. Jahn, A. Trampert, H. Riechert, H.-H. Wehmann, Andreas Waag:
Metal-organic vapour-phase epitaxy of gallium nitride nanostructures for optoelectronic applications. 333-335 - Prem K. Kandaswamy, H. Machhadani, E. Bellet-Amalric, L. Nevou, Maria Tchernycheva, L. Lahourcade, Francois H. Julien, Eva Monroy:
Strain effects in GaN/AlN multi-quantum-well structures for infrared optoelectronics. 336-338 - S. Leconte, L. Gerrer, Eva Monroy:
Electronic transport through GaN/AlN single barriers: Effect of polarisation and dislocations. 339-341 - Huaping Lei, Jun Chen, Xunya Jiang, Gérard Nouet:
Microstructure analysis in strained-InGaN/GaN multiple quantum wells. 342-345 - B. Arnaudov, D. S. Domanevskii, S. Evtimova, Ch. Ivanov, R. Kakanakov:
Band-filling effect on the light emission spectra of InGaN/GaN quantum wells with highly doped barriers. 346-348 - Fernando Bernabé Naranjo, Miguel González-Herráez, Sirona Valdueza-Felip, H. Fernández, Javier Solis, Susana Fernández, Eva Monroy, J. Grandal, M. A. Sánchez-García:
Non-linear properties of nitride-based nanostructures for optically controlling the speed of light at 1.5 µm. 349-352 - Mao-Nan Chang, Ruo-Syuan Lin, Hsueh-Hsing Liu, Hung-Min Lin, Hung-Cheng Lin, Jen-Inn Chyi:
Investigations of photo-assisted conductive atomic force microscopy on III-nitrides. 353-356 - Fayçal Djeffal, Djemai Arar, N. Lakhdar, Toufik Bendib, Zohir Dibi, M. Chahdi:
An approach based on particle swarm computation to study the electron mobility in wurtzite GaN. 357-359 - Thorvald G. Andersson, X. Y. Liu, T. Aggerstam, Petter Holmström, S. Lourdudoss, Lars Thylén, Y. L. Chen, C. H. Hsieh, I. Lo:
Macroscopic defects in GaN/AlN multiple quantum well structures grown by MBE on GaN templates. 360-362 - A. Touré, I. Halidou, Zohra Benzarti, Tarek Boufaden:
Growth temperature effect on MOVPE Si-doped GaN: Thermodynamic modeling. 363-366 - Elena Tschumak, Marcio Peron Franco de Godoy, Donat Josef As, Klaus Lischka:
Insulating substrates for cubic GaN-based HFETs. 367-369 - R. Kudrawiec, M. Motyka, J. Misiewicz, B. Paszkiewicz, R. Paszkiewicz, M. Tlaczala:
Contactless electroreflectance study of band bending for undoped, Si- and Mg-doped GaN layers and AlGaN/GaN transistor heterostructures. 370-372 - S. M. Kang, T. I. Shin, Duc V. Dinh, J. H. Yang, Sang-Woo Kim, D. H. Yoon:
Synthesis of GaN nanowires and nanorods via self-growth mode control. 373-376 - Marco Peres, Sérgio Magalhães, Nuno Franco, M. J. Soares, A. J. Neves, Eduardo Alves, Katharina Lorenz, Teresa Monteiro:
Influence of the AlN molar fraction on the structural and optical properties of praseodymium-doped AlxGa1-xN (0<=x<=1) alloys. 377-380 - Maria Elena Fragala, Graziella Malandrino:
Characterization of ZnO and ZnO: Al films deposited by MOCVD on oriented and amorphous substrates. 381-384
Volume 40, Number 3, March 2009
- Abdelkader Saïdane:
Preface: Workshop of recent advances on low dimensional structures and devices (WRA-LDSD). 385 - Shumin Wang, Huan Zhao, Göran Adolfsson, Yongqiang Wei, Q. X. Zhao, Johan S. Gustavsson, Mahdad Sadeghi, Anders Larsson:
Dilute nitrides and 1.3 µm GaInNAs quantum well lasers on GaAs. 386-391 - R. Kudrawiec, M. Gladysiewicz, M. Motyka, J. Misiewicz, G. Cywinski, Marcin Siekacz, Czeslaw Skierbiszewski:
Contactless electroreflectance of GaInN/AlInN multi quantum wells: The issue of broadening of optical transitions. 392-395 - Benjamin Royall, N. Balkan:
Dilute nitride n-i-p-i solar cells. 396-398 - L. Buckle, S. D. Coomber, T. Ashley, P. H. Jefferson, David Walker, T. D. Veal, Chris F. McConville, P. A. Thomas:
Growth and characterisation of dilute antimonide nitride materials for long-wavelength applications. 399-402 - Y. Sun, Naci Balkan, Ayse Erol, Cetin M. Arikan:
Electronic transport in n- and p-type modulation-doped GaInNAs/GaAs quantum wells. 403-405 - Mükremin Yilmaz, Y. Sun, Naci Balkan, Bülent Ulug, A. Ulug, M. Sopanen, O. Reentilä, M. Mattila, Chantal Fontaine, A. Arnoult:
Photoluminescence in n and p modulation-doped GaInNAs/GaAs quantum wells. 406-409 - A. Brannick, N. A. Zakhleniuk, B. K. Ridley, Lester F. Eastman, James R. Shealy, William J. Schaff:
Hydrodynamic simulation of surface traps in the AlGaN/GaN HEMT. 410-412 - S. B. Lisesivdin, N. Balkan, Ekmel Özbay:
A simple parallel conduction extraction method (SPCEM) for MODFETs and undoped GaN-based HEMTs. 413-417 - Alejandro Molina-Sánchez, A. García-Cristóbal, Andres Cantarero:
Tight-binding study of the optical properties of GaN/AlN polar and nonpolar quantum wells. 418-420 - Andenet Alemu, Alexandre Freundlich:
Opportunities in dilute nitride III-V semiconductors quantum confined p-i-n solar cells for single carrier resonant tunneling. 421-423 - J. Valenzuela, Samuel Mil'shtein:
Quantum well model of a conjugated polymer heterostructure solar cell. 424-426 - Macho Anani, Christian Mathieu, Mohammed Khadraoui, Zouaoui Chama, Sara Lebid, Youcef Amar:
High-grade efficiency III-nitrides semiconductor solar cell. 427-434 - Alex Axelevitch, Gady Golan:
Novel silicon high sensitive photonic sensor. 435-438 - Álvaro Miranda, Miguel Cruz-Irisson, C. Wang:
Modelling of electronic and phononic states of Ge nanostructures. 439-441 - Fauzia Jabeen, Silvia Rubini, Faustino Martelli:
Growth of III-V semiconductor nanowires by molecular beam epitaxy. 442-445 - Bin Li, Bart Partoens, François M. Peeters, Wim Magnus:
Dielectric mismatch effect on coupled impurity states in a freestanding nanowire. 446-448 - Artur Medvid, Igor Dmitruk, Pavels Onufrijevs, Iryna Pundyk:
Laser-induced self-organization of nano-wires on SiO2/Si interface. 449-451 - P. Das Kanungo, A. Wolfsteller, N. D. Zakharov, P. Werner, U. Gösele:
Enhanced electrical properties of nominally undoped Si/SiGe heterostructure nanowires grown by molecular beam epitaxy. 452-455 - Álvaro Miranda, Ruben Vázquez-Medina, Alejandro Díaz-Méndez, Miguel Cruz-Irisson:
Optical matrix elements in tight-binding approach of hydrogenated Si nanowires. 456-458 - Adalberto Alejo-Molina, José J. Sánchez-Mondragón, Daniel A. May-Arrioja, David Romero, Jesús Escobedo-Alatorre, Álvaro Zamudio Lara:
Complex dispersion relation of 1D dielectric photonic crystal with thin metallic layers. 459-461 - Chandani Rajapaksha, Alex Freundlich:
A real-time quantitative assessment of self-assembled quantum dots by reflection high-energy electron diffraction. 462-464