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"Electronic properties of GST for non-volatile memory."
Hangbing Lv et al. (2006)
- Hangbing Lv, Peng Zhou, Yinyin Lin, Tingao Tang, Baowei Qiao, Yunfeng Lai, Jie Feng, Bingchu Cai, Bomy Chen:
Electronic properties of GST for non-volatile memory. Microelectron. J. 37(9): 982-984 (2006)
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