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"Plasma-assisted chemical vapor deposited silicon oxynitride as an ..."

Anna Maria Szekeres et al. (2006)

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DOI: 10.1016/J.MEJO.2005.06.013

access: closed

type: Journal Article

metadata version: 2020-02-22

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Anna Maria Szekeres, T. Nikolova, S. Simeonov, A. Gushterov, F. Hamelmann, U. Heinzmann:
Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices. Microelectron. J. 37(1): 64-70 (2006)

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