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"Growth temperature effect on MOVPE Si-doped GaN: Thermodynamic modeling."

A. Touré et al. (2009)

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DOI: 10.1016/J.MEJO.2008.07.059

access: closed

type: Journal Article

metadata version: 2021-05-10

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  - journals/mj/ToureHBB09
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  - https://dblp.org/rec/journals/mj/ToureHBB09
A. Touré, I. Halidou, Zohra Benzarti, Tarek Boufaden:
Growth temperature effect on MOVPE Si-doped GaN: Thermodynamic modeling. Microelectron. J. 40(2): 363-366 (2009)

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