"Impact of Al-, Ni-, TiN-, and Mo-metal gates on MOCVD-grown ..."

Stephan Abermann et al. (2007)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2007.01.002

access: closed

type: Journal Article

metadata version: 2024-06-17

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/AbermannESLOB07
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/AbermannESLOB07
Stephan Abermann, J. K. Efavi, G. Sjöblom, Max Christian Lemme, Jörgen Olsson, Emmerich Bertagnolli:
Impact of Al-, Ni-, TiN-, and Mo-metal gates on MOCVD-grown HfO₂ and ZrO₂ high-kappa dielectrics. Microelectron. Reliab. 47(4-5): 536-539 (2007)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.