"Pre- and post-BD electrical conduction of stressed ..."

Lidia Aguilera et al. (2005)

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DOI: 10.1016/J.MICROREL.2005.07.105

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type: Journal Article

metadata version: 2020-02-22

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Lidia Aguilera, Marc Porti, Montserrat Nafría, Xavier Aymerich:
Pre- and post-BD electrical conduction of stressed HfO₂/SiO₂ MOS gate stacks observed at the nanoscale. Microelectron. Reliab. 45(9-11): 1390-1393 (2005)

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