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ORCIDMicroelectronics Reliability, Volume 45
Volume 45, Number 1, January 2005
- Tomasz Brozek:
Editorial. 1-2 - M. Houssa:
Modelling negative bias temperature instabilities in advanced p-MOSFETs. 3-12 - Prasad Chaparala, Douglas Brisbin:
Impact of NBTI and HCI on PMOSFET threshold voltage drift. 13-18 - Shyue Seng Tan, Tupei Chen
, Chew Hoe Ang, Lap Chan:
Mechanism of nitrogen-enhanced negative bias temperature instability in pMOSFET. 19-30 - Vijay Reddy, Anand T. Krishnan, Andrew Marshall, John Rodriguez, Sreedhar Natarajan, Tim Rost, Srikanth Krishnan:
Impact of negative bias temperature instability on digital circuit reliability. 31-38 - Christian Schlünder, Ralf Brederlow, Benno Ankele, Wolfgang Gustin, Karl Goser, Roland Thewes:
Effects of inhomogeneous negative bias temperature stress on p-channel MOSFETs of analog and RF circuits. 39-46 - Terence B. Hook, Ronald J. Bolam, William Clark, Jay S. Burnham, Nivo Rovedo, Laura Schutz:
Negative bias temperature instability on three oxide thicknesses (1.4/2.2/5.2 nm) with nitridation variations and deuteration. 47-56 - Shinji Fujieda, Yoshinao Miura, Motofumi Saitoh, Yuden Teraoka, Akitaka Yoshigoe:
Characterization of interface defects related to negative-bias temperature instability in ultrathin plasma-nitrided SiON/Si<1 0 0> systems. 57-64 - Shimpei Tsujikawa, Jiro Yugami:
Positive charge generation due to species of hydrogen during NBTI phenomenon in pMOSFETs with ultra-thin SiON gate dielectrics. 65-69 - Muhammad Ashraful Alam, S. Mahapatra:
A comprehensive model of PMOS NBTI degradation. 71-81 - Vincent Huard, Mickael Denais, F. Perrier, Nathalie Revil, C. R. Parthasarathy, Alain Bravaix, E. Vincent:
A thorough investigation of MOSFETs NBTI degradation. 83-98 - Maxim Ershov, Sharad Saxena, Sean Minehane, P. Clifton, Mark Redford, R. Lindley, H. Karbasi, S. Graves, S. Winters:
Degradation dynamics, recovery, and characterization of negative bias temperature instability. 99-105 - Yung-Huei Lee, Steve Jacobs, Stefan Stadler, Neal R. Mielke, Ramez Nachman:
The impact of PMOST bias-temperature degradation on logic circuit reliability performance. 107-114 - Ninoslav Stojadinovic, Ivica Manic, Vojkan Davidovic, Danijel Dankovic, Snezana Djoric-Veljkovic, Snezana Golubovic, Sima Dimitrijev:
Effects of electrical stressing in power VDMOSFETs. 115-122 - Elena Atanassova, Raisa V. Konakova, Vadym Fedorovych Mitin, J. Koprinarova, O. S. Lytvym, O. B. Okhrimenko, V. V. Schinkarenko, D. Virovska:
Effect of microwave radiation on the properties of Ta2O5-Si microstructures. 123-135 - Jian Chen, Jianbin Xu, Kun Xue, Jin An, Ning Ke, Wei Cao, Haibo Xia, Jing Shi, Decheng Tian:
Nanoscale structural characteristics and electron field emission properties of transition metal-fullerene compound TiC60 films. 137-142 - Y. C. Lin, Xu Chen, Xingsheng Liu, Guo-Quan Lu:
Effect of substrate flexibility on solder joint reliability. Part II: finite element modeling. 143-154 - Ming-e Jing, Yue Hao, Jinfeng Zhang, Peijun Ma:
Efficient parametric yield optimization of VLSI circuit by uniform design sampling method. 155-162 - Andrej Zemva, Baldomir Zajc:
Test generation for technology-specific multi-faults based on detectable perturbations. 163-173 - Enrique Miranda, B. Brandala:
A function-fit model for the hard breakdown I-V characteristics of ultra-thin oxides in MOS structures. 175-178 - Cher Ming Tan, Zhenghao Gan, Wai Fung Ho, Sam Chen, Robert Liu:
Determination of the dice forward I-V characteristics of a power diode from a packaged device and its applications. 179-184 - Weifeng Sun, Longxing Shi:
Improving the yield and reliability of the bulk-silicon HV-CMOS by adding a P-well. 185-190 - Pedro A. Martínez Martínez, Beatriz M. Monge-Sanz:
Single resistance controlled oscillator using unity gain cells. 191-194 - Mile K. Stojcev:
Analog IP blocks. 195-196 - Mile K. Stojcev:
Layout-mixed-signal. 197-198
Volume 45, Number 2, February 2005
- Wolfgang Stadler:
Guest editorial. 199-200 - Jeremy C. Smith, Gianluca Boselli:
A MOSFET power supply clamp with feedback enhanced triggering for ESD protection in advanced CMOS technologies. 201-210 - Michael Stockinger, James W. Miller, Michael G. Khazhinsky, Cynthia A. Torres, James C. Weldon, Bryan D. Preble, Martin J. Bayer, Matthew D. Akers, Vishnu G. Kamat:
Advanced rail clamp networks for ESD protection. 211-222 - Michael Chaine, James Davis, Al Kearney:
TLP analysis of 0.125 mum CMOS ESD input protection circuit. 223-231 - Florence Azaïs, B. Caillard, S. Dournelle, P. Salomé, Pascal Nouet:
A new multi-finger SCR-based structure for efficient on-chip ESD protection. 233-243 - Sami Hyvonen, Sopan Joshi, Elyse Rosenbaum:
Comprehensive ESD protection for RF inputs. 245-254 - Vesselin K. Vassilev, Steven Thijs, P. L. Segura, Piet Wambacq, Paul Leroux, Guido Groeseneken, M. I. Natarajan, Herman E. Maes, Michiel Steyaert:
ESD-RF co-design methodology for the state of the art RF-CMOS blocks. 255-268 - Wolfgang Stadler, Kai Esmark, K. Reynders, M. Zubeidat, Michael Graf, Wolfgang Wilkening, J. Willemen, Ning Qu, S. Mettler, M. Etherton:
Test circuits for fast and reliable assessment of CDM robustness of I/O stages. 269-277 - Heinrich Wolf, Horst A. Gieser, Wolfgang Stadler, Wolfgang Wilkening:
Capacitively coupled transmission line pulsing cc-TLP--a traceable and reproducible stress method in the CDM-domain. 279-285 - Andrew Olney, Brad Gifford, John Guravage, Alan W. Righter:
Real-world printed circuit board ESD failures. 287-295 - S. Bargstädt-Franke, Wolfgang Stadler, Kai Esmark, Martin Streibl, Krzysztof Domanski, Horst A. Gieser, Heinrich Wolf, Waclaw Bala:
Transient latch-up: experimental analysis and device simulation. 297-304 - Al Wallash:
ESD SPICE model and measurements for a hard disk drive. 305-311 - Martin Streibl, Franz Zängl, Kai Esmark, Robert Schwencker, Wolfgang Stadler, Harald Gossner, S. Drüen, Doris Schmitt-Landsiedel:
High abstraction level permutational ESD concept analysis. 313-321 - Steven H. Voldman:
A review of latchup and electrostatic discharge (ESD) in BiCMOS RF silicon germanium technologies: Part I - ESD. 323-340 - N. A. Hastas, N. Archontas, C. A. Dimitriadis, G. Kamarinos, T. Nikolaidis, N. Georgoulas, Adonios Thanailakis:
Substrate current and degradation of n-channel polycrystalline silicon thin-film transistors. 341-348 - Tsz Yin Man, Mansun Chan:
A 2-bit highly scalable nonvolatile memory cell with two electrically isolated charge trapping sites. 349-354 - P. C. Adell, Ronald D. Schrimpf, C. R. Cirba, W. T. Holman, X. Zhu, Hugh J. Barnaby, O. Mion:
Single event transient effects in a voltage reference. 355-359 - S. H. Choa:
Reliability of vacuum packaged MEMS gyroscopes. 361-369 - Chang-Lin Yeh, Yi-Shao Lai:
Transient analysis of the impact stage of wirebonding on Cu/low-K wafers. 371-378 - Daniel T. Rooney, DeePak Nager, David Geiger, Dongkai Shanguan:
Evaluation of wire bonding performance, process conditions, and metallurgical integrity of chip on board wire bonds. 379-390 - E. Misra, Md. M. Islam, Mahbub Hasan, H. C. Kim, T. L. Alford:
Percolative approach for failure time prediction of thin film interconnects under high current stress. 391-395 - Vitezslav Benda:
A note on trap recombination in high voltage device structures. 397-401 - Mile K. Stojcev:
Data communication. 403-404 - Mile K. Stojcev:
Yale N. Patt and Sanjay J. Patel, Introduction to Computing Systems: From Bits and Gates to C and Beyond Second edition, McGraw-Hill Higher Education, Boston (2004) ISBN 0-07-121503-4 Softcover, pp 632, plus XXIV. 405-406 - Mile K. Stojcev:
Vadim Ivanov, Igor Filanovsky, Operational Amplifier Speed and Accuracy Improvement: Analog Circuit Design with Structural Methodology, Kluwer Academic Publishers, Boston, 2004, Hardcover, pp 194, plus XIV, ISBN 1-4020-7772-6. 407-408
Volume 45, Numbers 3-4, March-April 2005
- Joachim N. Burghartz:
Review of add-on process modules for high-frequency silicon technology. 409-418 - John S. Suehle, Baozhong Zhu, Yuan Chen, Joseph B. Bernstein:
Detailed study and projection of hard breakdown evolution in ultra-thin gate oxides. 419-426 - Bonnie E. Weir, Che-Choi Leung, Paul J. Silverman, Muhammad Ashraful Alam:
Gate dielectric breakdown in the time-scale of ESD events. 427-436 - Steven H. Voldman:
A review of CMOS latchup and electrostatic discharge (ESD) in bipolar complimentary MOSFET (BiCMOS) Silicon Germanium technologies: Part II - Latchup. 437-455 - Vladislav A. Vashchenko, P. Hopper:
Bipolar SCR ESD devices. 457-471 - Jihyuk Lim, Keon Kuk, Seung-joo Shin, Seog-soon Baek, Youngjae Kim, Jong-Woo Shin, Yongsoo Oh:
Failure mechanisms in thermal inkjet printhead analyzed by experiments and numerical simulation. 473-478 - Christian Petit, A. Meinertzhagen, Damien Zander, O. Simonetti, M. Fadlallah, T. Maurel:
Low voltage SILC and P- and N-MOSFET gate oxide reliability. 479-485 - Didier Goguenheim, Alain Bravaix, S. Gomri, J. M. Moragues, C. Monserie, N. Legrand, Philippe Boivin:
Impact of wafer charging on hot carrier reliability and optimization of latent damage detection methodology in advanced CMOS technologies. 487-492 - Ignasi Cortés, Jaume Roig, David Flores, Jesús Urresti, Salvador Hidalgo, José Rebollo:
Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile. 493-498 - Alessandro Marras, Ilaria De Munari, Davide Vescovi, Paolo Ciampolini:
Impact of gate-leakage currents on CMOS circuit performance. 499-506 - Ramana Murthy, Y. W. Chen, A. Krishnamoorthy, X. T. Chen:
SiLKTM etch optimization and electrical characterization for 0.13 mum interconnects. 507-516 - C. F. Tsang, C. K. Chang, A. Krishnamoorthy, K. Y. Ee, Y. J. Su, H. Y. Li, W. H. Li, L. Y. Wong:
A study of post-etch wet clean on electrical and reliability performance of Cu/low k interconnections. 517-525 - J. de Vries, J. van Delft, C. Slob:
100 mum Pitch flip chip on foil assemblies with adhesive interconnections. 527-534 - Ying Wang, Changchun Zhu, Chunyu Wu, Junhua Liu:
Improving reliability of beveled power semiconductor devices passivated by SIPOS. 535-539 - Nebojsa Nenadovic, V. Cuoco, S. J. C. H. Theeuwen, Lis K. Nanver, Hugo Schellevis, G. Spierings, H. F. F. Jos, J. W. Slotboom:
Electrothermal characterization of silicon-on-glass VDMOSFETs. 541-550 - Ivan N. Ndip, Grit Sommer, Werner John, Herbert Reichl:
Characterization of bump arrays at RF/microwave frequencies. 551-558 - Yi Tao, Ajay P. Malshe:
Theoretical investigation on hermeticity testing of MEMS packages based on MIL-STD-883E. 559-566 - Tadanori Shimoto, Kazuhiro Baba, Koji Matsui, Jun Tsukano, Takehiko Maeda, Kenji Oyachi:
Ultra-thin high-density LSI packaging substrate for advanced CSPs and SiPs. 567-574 - Yi-Shao Lai, Tong Hong Wang:
Verification of submodeling technique in thermomechanical reliability assessment of flip-chip package assembly. 575-582 - Laura Frisk, Eero Ristolainen:
Flip chip attachment on flexible LCP substrate using an ACF. 583-588 - M. J. Rizvi, Y. C. Chan, Chris Bailey, Hua Lu:
Study of anisotropic conductive adhesive joint behavior under 3-point bending. 589-596 - Hua Lu, Jesse Zhou, Rich Golek, Ming Zhou:
Hybrid reliability assessment for packaging prototyping. 597-609 - Dongsu Ryu, Seogweon Chang:
Novel concepts for reliability technology. 611-622 - L. Zhang, G. Subbarayan, B. C. Hunter, D. Rose:
Response surface models for efficient, modular estimation of solder joint reliability in area array packages. 623-635 - Jinwon Joo, Seungmin Cho, Bongtae Han:
Characterization of flexural and thermo-mechanical behavior of plastic ball grid package assembly using moiré interferometry. 637-646 - Kyung-Seob Kim, K. W. Ryu, C. H. Yu, J. M. Kim:
The formation and growth of intermetallic compounds and shear strength at Sn-Zn solder/Au-Ni-Cu interfaces. 647-655 - C. T. Pan, P. J. Cheng, M. F. Chen, C. K. Yen:
Intermediate wafer level bonding and interface behavior. 657-663 - Tuomas F. Waris, Markus P. K. Turunen, Tomi Laurila, Jorma K. Kivilahti:
Evaluation of electrolessly deposited NiP integral resistors on flexible polyimide substrate. 665-673 - Sam Siau, Johan de Baets, André Van Calster, Leon Heremans, Sammy Tanghe:
Processing quality results for electroless/electroplating of high-aspect ratio plated through holes in industrially produced printed circuit boards. 675-687 - Yi He:
Chemical and diffusion-controlled curing kinetics of an underfill material. 689-695 - Tarikul Islam, C. Pramanik, Hiranmay Saha:
Modeling, simulation and temperature compensation of porous polysilicon capacitive humidity sensor using ANN technique. 697-703 - Sasa Radovanovic, Anne-Johan Annema, Bram Nauta:
Bandwidth of integrated photodiodes in standard CMOS for CD/DVD applications. 705-710 - Luke Maguire, Masud Behnia, Graham Morrison:
Systematic evaluation of thermal interface materials - a case study in high power amplifier design. 711-725 - Maria Teresa Sanz, Santiago Celma, Belén Calvo, Juan Pablo Alegre:
MOS current divider based PGA. 727-732 - Milos D. Krstic, Mile K. Stojcev, Goran Lj. Djordjevic, Ivan D. Andrejic:
A mid-value select voter. 733-738 - Wen Lea Pearn, Mou-Yuan Liao:
Measuring process capability based on CPK with gauge measurement errors. 739-751 - Kris Vanstreels, Marc D'Olieslaeger, Ward De Ceuninck, Jan D'Haen, Karen Maex:
A new method for the lifetime determination of submicron metal interconnects by means of a parallel test structure. 753-759 - Adam Jarosz, Andrzej Pfitzner:
Evaluation of parasitic capacitances for interconnection buses crossing in different layers. 761-765
Volume 45, Numbers 5-6, May-June 2005
- Paul K. Hurley:
Editorial. 767-769 - Gerald Lucovsky, James C. Phillips:
Bond strain and defects at interfaces in high-k gate stacks. 770-778 - Tom Schram, L.-Å. Ragnarsson, G. S. Lujan, W. Deweerd, J. Chen, W. Tsai, K. Henson, R. J. P. Lander, J. C. Hooker, J. Vertommen:
Performance improvement of self-aligned HfO2/TaN and SiON/TaN nMOS transistors. 779-782 - Jin-Ping Han, Sang-Mo Koo, Eric M. Vogel, Evgeni P. Gusev, C. D'Emic, Curt A. Richter, John S. Suehle:
Reverse short channel effects in high-k gated nMOSFETs. 783-785 - W. Deweerd, Vidya Kaushik, J. Chen, Y. Shimamoto, Tom Schram, L.-Å. Ragnarsson, Annelies Delabie, Luigi Pantisano, B. Eyckens, J. W. Maes:
Potential remedies for the VT/Vfb-shift problem of Hf/polysilicon-based gate stacks: a solution-based survey. 786-789 - Udo Schwalke, Yordan Stefanov:
Process integration and nanometer-scale electrical characterization of crystalline high-k gate dielectrics. 790-793 - G. S. Lujan, Wim Magnus, L.-Å. Ragnarsson, Stefan Kubicek, Stefan De Gendt, Marc M. Heyns, Kristin De Meyer:
Modelling mobility degradation due to remote Coulomb scattering from dielectric charges and its impact on MOS device performance. 794-797 - Vidya Kaushik, Martine Claes, Annelies Delabie, Sven Van Elshocht, Olivier Richard, Thierry Conard, Erika Rohr, Thomas Witters, Matty Caymax, Stefan De Gendt:
Observation and characterization of defects in HfO2 high-K gate dielectric layers. 798-801 - Y. G. Fedorenko, L. Truong, V. V. Afanasev, A. Stesmans, Z. Zhang, Stephen A. Campbell:
Impact of nitrogen incorporation on interface states in (100)Si/HfO2. 802-805 - Chadwin D. Young, Gennadi Bersuker, Yuegang Zhao, Jeff J. Peterson, Joel Barnett, George A. Brown, Jang H. Sim, Rino Choi, Byoung Hun Lee, Peter Zeitzoff:
Probing stress effects in HfO2 gate stacks with time dependent measurements. 806-810 - X. Blasco, Montserrat Nafría, Xavier Aymerich, J. Pétry, Wilfried Vandervorst:
Breakdown spots of ultra-thin (EOT<1.5nm) HfO2/SiO2 stacks observed with enhanced - CAFM. 811-814 - J. Pétry, Wilfried Vandervorst, Luigi Pantisano, Robin Degraeve:
On the data interpretation of the C-AFM measurements in the characterization of thin insulating layers. 815-818 - Martin Lemberger, Albena Paskaleva, Stefan Zürcher, Anton J. Bauer, Lothar Frey, Heiner Ryssel:
Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor. 819-822 - L. Truong, Y. G. Fedorenko, V. V. Afanasev, A. Stesmans:
Admittance spectroscopy of traps at the interfaces of (100)Si with Al2O3, ZrO2, and HfO2. 823-826 - Gerald Lucovsky, J. G. Hong, Charles C. Fulton, N. A. Stoute, Y. Zou, Robert J. Nemanich, David E. Aspnes, H. Ade, D. G. Schlom:
Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra. 827-830 - Pietro Delugas, Vincenzo Fiorentini:
Dielectric properties of two phases of crystalline lutetium oxide. 831-833 - Andreas Martin:
Reliability of gate dielectrics and metal-insulator-metal capacitors. 834-840 - G. Ribes, S. Bruyère, Mickael Denais, David Roy, Gérard Ghibaudo:
Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown. 841-844 - Felix Palumbo, G. Condorelli, Salvatore Lombardo, Kin Leong Pey, C. H. Tung, L. J. Tang:
Structure of the oxide damage under progressive breakdown. 845-848 - D. Bauza, F. Rahmoune, R. Laqli, Gérard Ghibaudo:
On the SILC mechanism in MOSFET's with ultrathin oxides. 849-852 - Fernanda Irrera, Giuseppina Puzzilli, Domenico Caputo:
A comprehensive model for oxide degradation. 853-856 - G. Ghidini, M. Langenbuch, R. Bottini, D. Brazzelli, Andrea Ghetti, N. Galbiati, G. Giusto, A. Garavaglia:
Impact of interface and bulk trapped charges on transistor reliability. 857-860 - Raul Fernández, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich:
Influence of oxide breakdown position and device aspect ratio on MOSFET's output characteristics. 861-864 - E. Sleeckx, Marc Schaekers, X. Shi, E. Kunnen, B. Degroote, M. Jurczak, Muriel de Potter de ten Broeck, E. Augendre:
Optimization of low temperature silicon nitride processes for improvement of device performance. 865-868 - Robert O'Connor, Greg Hughes, Robin Degraeve, Ben Kaczer:
Progressive breakdown in ultrathin SiON dielectrics and its effect on transistor performance. 869-874 - M. Langenbuch, R. Bottini, Maria Elena Vitali, G. Ghidini:
In situ steam generation (ISSG) versus standard steam technology: impact on oxide reliability. 875-878 - A. Pecora, Luca Maiolo,