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ORCIDMicroelectronics Reliability, Volume 45
Volume 45, Number 1, January 2005
- Tomasz Brozek:
Editorial. 1-2 - M. Houssa:
Modelling negative bias temperature instabilities in advanced p-MOSFETs. 3-12 - Prasad Chaparala, Douglas Brisbin:
Impact of NBTI and HCI on PMOSFET threshold voltage drift. 13-18 - Shyue Seng Tan, Tupei Chen
, Chew Hoe Ang, Lap Chan:
Mechanism of nitrogen-enhanced negative bias temperature instability in pMOSFET. 19-30 - Vijay Reddy, Anand T. Krishnan, Andrew Marshall, John Rodriguez, Sreedhar Natarajan, Tim Rost, Srikanth Krishnan:
Impact of negative bias temperature instability on digital circuit reliability. 31-38 - Christian Schlünder, Ralf Brederlow, Benno Ankele, Wolfgang Gustin, Karl Goser, Roland Thewes:
Effects of inhomogeneous negative bias temperature stress on p-channel MOSFETs of analog and RF circuits. 39-46 - Terence B. Hook, Ronald J. Bolam, William Clark, Jay S. Burnham, Nivo Rovedo, Laura Schutz:
Negative bias temperature instability on three oxide thicknesses (1.4/2.2/5.2 nm) with nitridation variations and deuteration. 47-56 - Shinji Fujieda, Yoshinao Miura, Motofumi Saitoh, Yuden Teraoka, Akitaka Yoshigoe:
Characterization of interface defects related to negative-bias temperature instability in ultrathin plasma-nitrided SiON/Si<1 0 0> systems. 57-64 - Shimpei Tsujikawa, Jiro Yugami:
Positive charge generation due to species of hydrogen during NBTI phenomenon in pMOSFETs with ultra-thin SiON gate dielectrics. 65-69 - Muhammad Ashraful Alam, S. Mahapatra:
A comprehensive model of PMOS NBTI degradation. 71-81 - Vincent Huard, Mickael Denais, F. Perrier, Nathalie Revil, C. R. Parthasarathy, Alain Bravaix, E. Vincent:
A thorough investigation of MOSFETs NBTI degradation. 83-98 - Maxim Ershov, Sharad Saxena, Sean Minehane, P. Clifton, Mark Redford, R. Lindley, H. Karbasi, S. Graves, S. Winters:
Degradation dynamics, recovery, and characterization of negative bias temperature instability. 99-105 - Yung-Huei Lee, Steve Jacobs, Stefan Stadler, Neal R. Mielke, Ramez Nachman:
The impact of PMOST bias-temperature degradation on logic circuit reliability performance. 107-114 - Ninoslav Stojadinovic, Ivica Manic, Vojkan Davidovic, Danijel Dankovic, Snezana Djoric-Veljkovic, Snezana Golubovic, Sima Dimitrijev:
Effects of electrical stressing in power VDMOSFETs. 115-122 - Elena Atanassova, Raisa V. Konakova, Vadym Fedorovych Mitin, J. Koprinarova, O. S. Lytvym, O. B. Okhrimenko, V. V. Schinkarenko, D. Virovska:
Effect of microwave radiation on the properties of Ta2O5-Si microstructures. 123-135 - Jian Chen, Jianbin Xu, Kun Xue, Jin An, Ning Ke, Wei Cao, Haibo Xia, Jing Shi, Decheng Tian:
Nanoscale structural characteristics and electron field emission properties of transition metal-fullerene compound TiC60 films. 137-142 - Y. C. Lin, Xu Chen, Xingsheng Liu, Guo-Quan Lu:
Effect of substrate flexibility on solder joint reliability. Part II: finite element modeling. 143-154 - Ming-e Jing, Yue Hao, Jinfeng Zhang, Peijun Ma:
Efficient parametric yield optimization of VLSI circuit by uniform design sampling method. 155-162 - Andrej Zemva, Baldomir Zajc:
Test generation for technology-specific multi-faults based on detectable perturbations. 163-173 - Enrique Miranda, B. Brandala:
A function-fit model for the hard breakdown I-V characteristics of ultra-thin oxides in MOS structures. 175-178 - Cher Ming Tan, Zhenghao Gan, Wai Fung Ho, Sam Chen, Robert Liu:
Determination of the dice forward I-V characteristics of a power diode from a packaged device and its applications. 179-184 - Weifeng Sun, Longxing Shi:
Improving the yield and reliability of the bulk-silicon HV-CMOS by adding a P-well. 185-190 - Pedro A. Martínez Martínez, Beatriz M. Monge-Sanz:
Single resistance controlled oscillator using unity gain cells. 191-194 - Mile K. Stojcev:
Analog IP blocks. 195-196 - Mile K. Stojcev:
Layout-mixed-signal. 197-198
Volume 45, Number 2, February 2005
- Wolfgang Stadler:
Guest editorial. 199-200 - Jeremy C. Smith, Gianluca Boselli:
A MOSFET power supply clamp with feedback enhanced triggering for ESD protection in advanced CMOS technologies. 201-210 - Michael Stockinger, James W. Miller, Michael G. Khazhinsky, Cynthia A. Torres, James C. Weldon, Bryan D. Preble, Martin J. Bayer, Matthew D. Akers, Vishnu G. Kamat:
Advanced rail clamp networks for ESD protection. 211-222 - Michael Chaine, James Davis, Al Kearney:
TLP analysis of 0.125 mum CMOS ESD input protection circuit. 223-231 - Florence Azaïs, B. Caillard, S. Dournelle, P. Salomé, Pascal Nouet:
A new multi-finger SCR-based structure for efficient on-chip ESD protection. 233-243 - Sami Hyvonen, Sopan Joshi, Elyse Rosenbaum:
Comprehensive ESD protection for RF inputs. 245-254 - Vesselin K. Vassilev, Steven Thijs, P. L. Segura, Piet Wambacq, Paul Leroux, Guido Groeseneken, M. I. Natarajan, Herman E. Maes, Michiel Steyaert:
ESD-RF co-design methodology for the state of the art RF-CMOS blocks. 255-268 - Wolfgang Stadler, Kai Esmark, K. Reynders, M. Zubeidat, Michael Graf, Wolfgang Wilkening, J. Willemen, Ning Qu, S. Mettler, M. Etherton:
Test circuits for fast and reliable assessment of CDM robustness of I/O stages. 269-277 - Heinrich Wolf, Horst A. Gieser, Wolfgang Stadler, Wolfgang Wilkening:
Capacitively coupled transmission line pulsing cc-TLP--a traceable and reproducible stress method in the CDM-domain. 279-285 - Andrew Olney, Brad Gifford, John Guravage, Alan W. Righter:
Real-world printed circuit board ESD failures. 287-295 - S. Bargstädt-Franke, Wolfgang Stadler, Kai Esmark, Martin Streibl, Krzysztof Domanski, Horst A. Gieser, Heinrich Wolf, Waclaw Bala:
Transient latch-up: experimental analysis and device simulation. 297-304 - Al Wallash:
ESD SPICE model and measurements for a hard disk drive. 305-311 - Martin Streibl, Franz Zängl, Kai Esmark, Robert Schwencker, Wolfgang Stadler, Harald Gossner, S. Drüen, Doris Schmitt-Landsiedel:
High abstraction level permutational ESD concept analysis. 313-321 - Steven H. Voldman:
A review of latchup and electrostatic discharge (ESD) in BiCMOS RF silicon germanium technologies: Part I - ESD. 323-340 - N. A. Hastas, N. Archontas, C. A. Dimitriadis, G. Kamarinos, T. Nikolaidis, N. Georgoulas, Adonios Thanailakis:
Substrate current and degradation of n-channel polycrystalline silicon thin-film transistors. 341-348 - Tsz Yin Man, Mansun Chan:
A 2-bit highly scalable nonvolatile memory cell with two electrically isolated charge trapping sites. 349-354 - P. C. Adell, Ronald D. Schrimpf, C. R. Cirba, W. T. Holman, X. Zhu, Hugh J. Barnaby, O. Mion:
Single event transient effects in a voltage reference. 355-359 - S. H. Choa:
Reliability of vacuum packaged MEMS gyroscopes. 361-369 - Chang-Lin Yeh, Yi-Shao Lai:
Transient analysis of the impact stage of wirebonding on Cu/low-K wafers. 371-378 - Daniel T. Rooney, DeePak Nager, David Geiger, Dongkai Shanguan:
Evaluation of wire bonding performance, process conditions, and metallurgical integrity of chip on board wire bonds. 379-390 - E. Misra, Md. M. Islam, Mahbub Hasan, H. C. Kim, T. L. Alford:
Percolative approach for failure time prediction of thin film interconnects under high current stress. 391-395 - Vitezslav Benda:
A note on trap recombination in high voltage device structures. 397-401 - Mile K. Stojcev:
Data communication. 403-404 - Mile K. Stojcev:
Yale N. Patt and Sanjay J. Patel, Introduction to Computing Systems: From Bits and Gates to C and Beyond Second edition, McGraw-Hill Higher Education, Boston (2004) ISBN 0-07-121503-4 Softcover, pp 632, plus XXIV. 405-406 - Mile K. Stojcev:
Vadim Ivanov, Igor Filanovsky, Operational Amplifier Speed and Accuracy Improvement: Analog Circuit Design with Structural Methodology, Kluwer Academic Publishers, Boston, 2004, Hardcover, pp 194, plus XIV, ISBN 1-4020-7772-6. 407-408
Volume 45, Numbers 3-4, March-April 2005
- Joachim N. Burghartz:
Review of add-on process modules for high-frequency silicon technology. 409-418 - John S. Suehle, Baozhong Zhu, Yuan Chen, Joseph B. Bernstein:
Detailed study and projection of hard breakdown evolution in ultra-thin gate oxides. 419-426 - Bonnie E. Weir, Che-Choi Leung, Paul J. Silverman, Muhammad Ashraful Alam:
Gate dielectric breakdown in the time-scale of ESD events. 427-436 - Steven H. Voldman:
A review of CMOS latchup and electrostatic discharge (ESD) in bipolar complimentary MOSFET (BiCMOS) Silicon Germanium technologies: Part II - Latchup. 437-455 - Vladislav A. Vashchenko, P. Hopper:
Bipolar SCR ESD devices. 457-471 - Jihyuk Lim, Keon Kuk, Seung-joo Shin, Seog-soon Baek, Youngjae Kim, Jong-Woo Shin, Yongsoo Oh:
Failure mechanisms in thermal inkjet printhead analyzed by experiments and numerical simulation. 473-478 - Christian Petit, A. Meinertzhagen, Damien Zander, O. Simonetti, M. Fadlallah, T. Maurel:
Low voltage SILC and P- and N-MOSFET gate oxide reliability. 479-485 - Didier Goguenheim, Alain Bravaix, S. Gomri, J. M. Moragues, C. Monserie, N. Legrand, Philippe Boivin:
Impact of wafer charging on hot carrier reliability and optimization of latent damage detection methodology in advanced CMOS technologies. 487-492 - Ignasi Cortés, Jaume Roig, David Flores, Jesús Urresti, Salvador Hidalgo, José Rebollo:
Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile. 493-498 - Alessandro Marras, Ilaria De Munari, Davide Vescovi, Paolo Ciampolini:
Impact of gate-leakage currents on CMOS circuit performance. 499-506 - Ramana Murthy, Y. W. Chen, A. Krishnamoorthy, X. T. Chen:
SiLKTM etch optimization and electrical characterization for 0.13 mum interconnects. 507-516 - C. F. Tsang, C. K. Chang, A. Krishnamoorthy, K. Y. Ee, Y. J. Su, H. Y. Li, W. H. Li, L. Y. Wong:
A study of post-etch wet clean on electrical and reliability performance of Cu/low k interconnections. 517-525 - J. de Vries, J. van Delft, C. Slob:
100 mum Pitch flip chip on foil assemblies with adhesive interconnections. 527-534 - Ying Wang, Changchun Zhu, Chunyu Wu, Junhua Liu:
Improving reliability of beveled power semiconductor devices passivated by SIPOS. 535-539 - Nebojsa Nenadovic, V. Cuoco, S. J. C. H. Theeuwen, Lis K. Nanver, Hugo Schellevis, G. Spierings, H. F. F. Jos, J. W. Slotboom:
Electrothermal characterization of silicon-on-glass VDMOSFETs. 541-550 - Ivan N. Ndip, Grit Sommer, Werner John, Herbert Reichl:
Characterization of bump arrays at RF/microwave frequencies. 551-558 - Yi Tao, Ajay P. Malshe:
Theoretical investigation on hermeticity testing of MEMS packages based on MIL-STD-883E. 559-566 - Tadanori Shimoto, Kazuhiro Baba, Koji Matsui, Jun Tsukano, Takehiko Maeda, Kenji Oyachi:
Ultra-thin high-density LSI packaging substrate for advanced CSPs and SiPs. 567-574 - Yi-Shao Lai, Tong Hong Wang:
Verification of submodeling technique in thermomechanical reliability assessment of flip-chip package assembly. 575-582 - Laura Frisk, Eero Ristolainen:
Flip chip attachment on flexible LCP substrate using an ACF. 583-588 - M. J. Rizvi, Y. C. Chan, Chris Bailey, Hua Lu:
Study of anisotropic conductive adhesive joint behavior under 3-point bending. 589-596 - Hua Lu, Jesse Zhou, Rich Golek, Ming Zhou:
Hybrid reliability assessment for packaging prototyping. 597-609 - Dongsu Ryu, Seogweon Chang:
Novel concepts for reliability technology. 611-622 - L. Zhang, G. Subbarayan, B. C. Hunter, D. Rose:
Response surface models for efficient, modular estimation of solder joint reliability in area array packages. 623-635 - Jinwon Joo, Seungmin Cho, Bongtae Han:
Characterization of flexural and thermo-mechanical behavior of plastic ball grid package assembly using moiré interferometry. 637-646 - Kyung-Seob Kim, K. W. Ryu, C. H. Yu, J. M. Kim:
The formation and growth of intermetallic compounds and shear strength at Sn-Zn solder/Au-Ni-Cu interfaces. 647-655 - C. T. Pan, P. J. Cheng, M. F. Chen, C. K. Yen:
Intermediate wafer level bonding and interface behavior. 657-663 - Tuomas F. Waris, Markus P. K. Turunen, Tomi Laurila, Jorma K. Kivilahti:
Evaluation of electrolessly deposited NiP integral resistors on flexible polyimide substrate. 665-673 - Sam Siau, Johan de Baets, André Van Calster, Leon Heremans, Sammy Tanghe:
Processing quality results for electroless/electroplating of high-aspect ratio plated through holes in industrially produced printed circuit boards. 675-687 - Yi He:
Chemical and diffusion-controlled curing kinetics of an underfill material. 689-695 - Tarikul Islam, C. Pramanik, Hiranmay Saha:
Modeling, simulation and temperature compensation of porous polysilicon capacitive humidity sensor using ANN technique. 697-703 - Sasa Radovanovic, Anne-Johan Annema, Bram Nauta:
Bandwidth of integrated photodiodes in standard CMOS for CD/DVD applications. 705-710 - Luke Maguire, Masud Behnia, Graham Morrison:
Systematic evaluation of thermal interface materials - a case study in high power amplifier design. 711-725 - Maria Teresa Sanz, Santiago Celma, Belén Calvo, Juan Pablo Alegre:
MOS current divider based PGA. 727-732 - Milos D. Krstic, Mile K. Stojcev, Goran Lj. Djordjevic, Ivan D. Andrejic:
A mid-value select voter. 733-738 - Wen Lea Pearn, Mou-Yuan Liao:
Measuring process capability based on CPK with gauge measurement errors. 739-751 - Kris Vanstreels, Marc D'Olieslaeger, Ward De Ceuninck, Jan D'Haen, Karen Maex:
A new method for the lifetime determination of submicron metal interconnects by means of a parallel test structure. 753-759 - Adam Jarosz, Andrzej Pfitzner:
Evaluation of parasitic capacitances for interconnection buses crossing in different layers. 761-765
Volume 45, Numbers 5-6, May-June 2005
- Paul K. Hurley:
Editorial. 767-769 - Gerald Lucovsky, James C. Phillips:
Bond strain and defects at interfaces in high-k gate stacks. 770-778 - Tom Schram, L.-Å. Ragnarsson, G. S. Lujan, W. Deweerd, J. Chen, W. Tsai, K. Henson, R. J. P. Lander, J. C. Hooker, J. Vertommen:
Performance improvement of self-aligned HfO2/TaN and SiON/TaN nMOS transistors. 779-782 - Jin-Ping Han, Sang-Mo Koo, Eric M. Vogel, Evgeni P. Gusev, C. D'Emic, Curt A. Richter, John S. Suehle:
Reverse short channel effects in high-k gated nMOSFETs. 783-785 - W. Deweerd, Vidya Kaushik, J. Chen, Y. Shimamoto, Tom Schram, L.-Å. Ragnarsson, Annelies Delabie, Luigi Pantisano, B. Eyckens, J. W. Maes:
Potential remedies for the VT/Vfb-shift problem of Hf/polysilicon-based gate stacks: a solution-based survey. 786-789 - Udo Schwalke, Yordan Stefanov:
Process integration and nanometer-scale electrical characterization of crystalline high-k gate dielectrics. 790-793 - G. S. Lujan, Wim Magnus, L.-Å. Ragnarsson, Stefan Kubicek, Stefan De Gendt, Marc M. Heyns, Kristin De Meyer:
Modelling mobility degradation due to remote Coulomb scattering from dielectric charges and its impact on MOS device performance. 794-797 - Vidya Kaushik, Martine Claes, Annelies Delabie, Sven Van Elshocht, Olivier Richard, Thierry Conard, Erika Rohr, Thomas Witters, Matty Caymax, Stefan De Gendt:
Observation and characterization of defects in HfO2 high-K gate dielectric layers. 798-801 - Y. G. Fedorenko, L. Truong, V. V. Afanasev, A. Stesmans, Z. Zhang, Stephen A. Campbell:
Impact of nitrogen incorporation on interface states in (100)Si/HfO2. 802-805 - Chadwin D. Young, Gennadi Bersuker, Yuegang Zhao, Jeff J. Peterson, Joel Barnett, George A. Brown, Jang H. Sim, Rino Choi, Byoung Hun Lee, Peter Zeitzoff:
Probing stress effects in HfO2 gate stacks with time dependent measurements. 806-810 - X. Blasco, Montserrat Nafría, Xavier Aymerich, J. Pétry, Wilfried Vandervorst:
Breakdown spots of ultra-thin (EOT<1.5nm) HfO2/SiO2 stacks observed with enhanced - CAFM. 811-814 - J. Pétry, Wilfried Vandervorst, Luigi Pantisano, Robin Degraeve:
On the data interpretation of the C-AFM measurements in the characterization of thin insulating layers. 815-818 - Martin Lemberger, Albena Paskaleva, Stefan Zürcher, Anton J. Bauer, Lothar Frey, Heiner Ryssel:
Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor. 819-822 - L. Truong, Y. G. Fedorenko, V. V. Afanasev, A. Stesmans:
Admittance spectroscopy of traps at the interfaces of (100)Si with Al2O3, ZrO2, and HfO2. 823-826 - Gerald Lucovsky, J. G. Hong, Charles C. Fulton, N. A. Stoute, Y. Zou, Robert J. Nemanich, David E. Aspnes, Harald Ade, D. G. Schlom:
Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra. 827-830 - Pietro Delugas, Vincenzo Fiorentini:
Dielectric properties of two phases of crystalline lutetium oxide. 831-833 - Andreas Martin:
Reliability of gate dielectrics and metal-insulator-metal capacitors. 834-840 - G. Ribes, S. Bruyère, Mickael Denais, David Roy, Gérard Ghibaudo:
Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown. 841-844 - Felix Palumbo, G. Condorelli, Salvatore Lombardo, Kin Leong Pey, C. H. Tung, L. J. Tang:
Structure of the oxide damage under progressive breakdown. 845-848 - D. Bauza, F. Rahmoune, R. Laqli, Gérard Ghibaudo:
On the SILC mechanism in MOSFET's with ultrathin oxides. 849-852 - Fernanda Irrera, Giuseppina Puzzilli, Domenico Caputo:
A comprehensive model for oxide degradation. 853-856 - G. Ghidini, M. Langenbuch, R. Bottini, D. Brazzelli, Andrea Ghetti, N. Galbiati, G. Giusto, A. Garavaglia:
Impact of interface and bulk trapped charges on transistor reliability. 857-860 - Raul Fernández, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich:
Influence of oxide breakdown position and device aspect ratio on MOSFET's output characteristics. 861-864 - E. Sleeckx, Marc Schaekers, X. Shi, E. Kunnen, B. Degroote, M. Jurczak, Muriel de Potter de ten Broeck, E. Augendre:
Optimization of low temperature silicon nitride processes for improvement of device performance. 865-868 - Robert O'Connor, Greg Hughes, Robin Degraeve, Ben Kaczer:
Progressive breakdown in ultrathin SiON dielectrics and its effect on transistor performance. 869-874 - M. Langenbuch, R. Bottini, Maria Elena Vitali, G. Ghidini:
In situ steam generation (ISSG) versus standard steam technology: impact on oxide reliability. 875-878 - A. Pecora, Luca Maiolo, A. Bonfiglietti, M. Cuscunà, F. Mecarini, Luigi Mariucci, Guglielmo Fortunato, N. D. Young:
Silicon dioxide deposited by ECR-PECVD for low-temperature Si devices processing. 879-882 - C. Trapes, Didier Goguenheim, Alain Bravaix:
Experimental extraction of degradation parameters after constant voltage stress and substrate hot electron injection on ultrathin oxides. 883-886 - J. Yang, Joseph J. Kopanski, Adam Postula, Marek E. Bialkowski:
Experimental investigation of the dielectric-semiconductor interface with scanning capacitance microscopy. 887-890 - Damien Zander:
Comparison of interfaces states density through their energy distribution and LVSILC induced by uniform and localized injections in 2.3nm thick oxides. 891-894 - Ester Spitale, D. Corso, Isodiana Crupi, Salvatore Lombardo, Cosimo Gerardi:
Improvement of the P/E window in nanocrystal memories by the use of high-k materials in the control dielectric. 895-898 - Josep Carreras, B. Garrido, J. R. Morante:
Improved charge injection in Si nanocrystal non-volatile memories. 899-902 - V. I. Turchanikov, A. N. Nazarov, V. S. Lysenko, Josep Carreras, B. Garrido:
Charge storage peculiarities in poly-Si-SiO2-Si memory devices with Si nanocrystals rich SiO2. 903-906 - Fernanda Irrera, Giuseppina Puzzilli:
Crested barrier in the tunnel stack of non-volatile memories. 907-910 - Nicolas Baboux, Carole Plossu, Philippe Boivin:
Dynamic Fowler-Nordheim injection in EEPROM tunnel oxides at realistic time scales. 911-914 - R. Rölver, O. Winkler, Michael Först, B. Spangenberg, H. Kurz:
Light emission from Si/SiO2 superlattices fabricated by RPECVD. 915-918 - C. M. Garner, G. Kloster, G. Atwood, L. Mosley, A. C. Palanduz:
Challenges for dielectric materials in future integrated circuit technologies. 919-924 - Emilie Deloffre, L. Montès, Gérard Ghibaudo, Sylvie Bruyère, Serge Blonkowski, Stéphane Bécu, Mickael Gros-Jean, Sébastien Crémer:
Electrical properties in low temperature range (5K-300K) of Tantalum Oxide dielectric MIM capacitors. 925-928 - J. M. Decams, H. Guillon, Carmen Jiménez, M. Audier, J. P. Sénateur, C. Dubourdieu, O. Cadix, Barry J. O'Sullivan, Mircea Modreanu, Paul K. Hurley:
Electrical characterization of HfO2 films obtained by UV assisted injection MOCVD. 929-932 - V. Mikhelashvili, B. Meyler, J. Shneider, O. Kreinin, Gadi Eisenstein:
Electrical properties of MIS capacitor using low temperature electron beam gun - evaporated HfAlO dielectrics. 933-936 - Vanessa Capodieci, Florian Wiest, Torsten Sulima, Jörg Schulze, Ignaz Eisele:
Examination and evaluation of La2O3 as gate dielectric for sub-100nm CMOS and DRAM technology. 937-940 - A. Sibai, S. Lhostis, Yoann Rozier, O. Salicio, S. Amtablian, C. Dubois, J. Legrand, J. P. Sénateur, M. Audier, L. Hubert-Pfalzgraff:
Characterization of crystalline MOCVD SrTiO3 films on SiO2/Si(100). 941-944 - U. Weber, M. Schumacher, J. Lindner, O. Boissière, P. Lehnen, S. Miedl, P. K. Baumann, G. Barbar, C. Lohe, T. McEntee:
AVD® technology for deposition of next generation devices. 945-948 - Salvador Dueñas, Helena Castán, Héctor García, J. Barbolla, Kaupo Kukli, Jaan Aarik, Mikko Ritala, Markku Leskelä:
Electrical characterization of hafnium oxide and hafnium-rich silicate films grown by atomic layer deposition. 949-952 - Max Christian Lemme, J. K. Efavi, H. D. B. Gottlob, Thomas Mollenhauer, Thorsten Wahlbrink, Heinrich Kurz:
Comparison of metal gate electrodes on MOCVD HfO2. 953-956 - Q. Fang, I. Liaw, Mircea Modreanu, Paul K. Hurley, I. W. Boyd:
Post deposition UV-induced O2 annealing of HfO2 thin films. 957-960 - Fu-Chien Chiu, Shun-An Lin, Joseph Ya-min Lee:
Electrical properties of metal-HfO2-silicon system measured from metal-insulator-semiconductor capacitors and metal-insulator-semiconductor field-effect transistors using HfO2 gate dielectric. 961-964 - Y. Lu, Octavian Buiu, Steve Hall, Paul K. Hurley:
Optical and electrical characterization of hafnium oxide deposited by MOCVD. 965-968 - Ming-Tsong Wang, Tsung-Hong Wang, Joseph Ya-min Lee:
Electrical conduction mechanism in high-dielectric-constant ZrO2 thin films. 969-972 - James Prendergast, Eoin O'Driscoll, Ed Mullen:
Investigation into the correct statistical distribution for oxide breakdown over oxide thickness range. 973-977 - Salvador Dueñas, Helena Castán, Héctor García, J. Barbolla, E. San Andrés, I. Mártil, G. González-Díaz:
On the influence of substrate cleaning method and rapid thermal annealing conditions on the electrical characteristics of Al/SiNx/SiO2/Si fabricated by ECR-CVD. 978-981 - Elena Halova, Sashka Alexandrova, A. Szekeres, Mircea Modreanu:
LPCVD-silicon oxynitride films: interface properties. 982-985 - V. Em. Vamvakas, D. Davazoglou:
Influence of the annealing temperature on the IR properties of SiO2 films grown from SiH4+O2. 986-989 - Maria Vasilopoulou, A. M. Douvas, D. Kouvatsos, Panagiotis Argitis, D. Davazoglou:
Characterization of various insulators for possible use as low-k dielectrics deposited at temperatures below 200degreeC. 990-993 - Giacomo Barletta, Giuseppe Currò:
Junction leakage current degradation under high temperature reverse-bias stress induced by band-defect-band tunnelling in power VDMOS. 994-999 - Simon A. Rushworth, L. M. Smith, Andrew J. Kingsley, Rajesh Odedra, R. Nickson, P. Hughes:
Vapour pressure measurement of low volatility precursors. 1000-1002 - P. C. Juan, H. C. Chou, J. Y. M. Lee:
The effect of electrode material on the electrical conduction of metal-Pb(Zr0.53Ti0.47)O3-metal thin film capacitors. 1003-1006 - S. Beckx, M. Demand, S. Locorotondo, K. Henson, M. Claes, V. Paraschiv, D. Shamiryan, P. Jaenen, W. Boullart, S. Degendt:
Implementation of high-k and metal gate materials for the 45nm node and beyond: gate patterning development. 1007-1011 - Mile K. Stojcev:
Testing Static Random Access Memories: Defects, Fault Models and Test Patterns, Said Hamdioui, Kluwer Academic Publishers, Boston, 2004, Hardcover, pp 221, plus XX, ISBN 1-4020-7752-1. 1012-1013 - Mile K. Stojcev:
Behrouz A. Forouzan, Data Communications and Networking Third edition, McGraw-Hill Higher Education, Boston (2003) ISBN 0-07-251584-8 Softcover, pp 973, plus XXXIV. 1014-1016 - Mile K. Stojcev:
Boris Murmann, Bernhard Boser, Digitally Assisted Pipeline ADCs: Theory and Implementation, Kluwer Academic Publishers, Boston, 2004, ISBN 1-4020-7839-0. Hardcover, pp 155, plus XX. 1017-1018 - Mile K. Stojcev:
Carl Hamacher, Zvonko Vranesic, Safwat Zaky, Computer Organization, Fifth edition, 2004, ISBN 0-07-112214-4. Hardcover, pp 805, plus XX. 1019-1020
Volume 45, Numbers 7-8, July-August 2005
- Douglas Brisbin, Andy Strachan, Prasad Chaparala:
Optimizing the hot carrier reliability of N-LDMOS transistor arrays. 1021-1032 - David Q. Kelly, Sagnik Dey, David Onsongo, Sanjay K. Banerjee:
Considerations for evaluating hot-electron reliability of strained Si n-channel MOSFETs. 1033-1040 - Wataru Mizubayashi, Naoki Yasuda, Kenji Okada, Hiroyuki Ota, Hirokazu Hisamatsu, Kunihiko Iwamoto, Koji Tominaga, Katsuhiko Yamamoto, Tsuyoshi Horikawa, Toshihide Nabatame:
Carrier separation analysis for clarifying carrier conduction and degradation mechanisms in high-k stack gate dielectrics. 1041-1050 - Se Jong Rhee, Jack C. Lee:
Threshold voltage instability characteristics of HfO2 dielectrics n-MOSFETs. 1051-1060 - M. H. Lin, Y. L. Lin, K. P. Chang, K. C. Su, Tahui Wang:
Copper interconnect electromigration behaviors in various structures and lifetime improvement by cap/dielectric interface treatment. 1061-1078 - Guotao Wang, Paul S. Ho, Steven Groothuis:
Chip-packaging interaction: a critical concern for Cu/low k packaging. 1079-1093 - Andrea Chimenton, Piero Olivo:
Reliability of erasing operation in NOR-Flash memories. 1094-1108 - Hideki Aono, Eiichi Murakami, Kousuke Okuyama, A. Nishida, Masataka Minami, Y. Ooji, Katsuhiko Kubota:
Modeling of NBTI saturation effect and its impact on electric field dependence of the lifetime. 1109-1114 - Shyue Seng Tan, Tupei Chen, Lap Chan:
Dynamic NBTI lifetime model for inverter-like waveform. 1115-1118 - Yao-Jen Lee, Tien-Sheng Chao, Tiao-Yuan Huang:
High voltage applications and NBTI effects of DT-pMOSFETS with reverse Schottky substrate contacts. 1119-1123 - Albena Paskaleva, Anton J. Bauer, Martin Lemberger:
Conduction mechanisms and an evidence for phonon-assisted conduction process in thin high-k HfxTiySizO films. 1124-1133 - H. Y. Li, Y. J. Su, C. F. Tsang, S. M. Sohan, V. N. Bliznetsov, L. Zhang:
Process improvement of 0.13mum Cu/Low K (Black DiamondTM) dual damascene interconnection. 1134-1143 - Ching-Sung Ho, Kuo-Yin Huang, Ming Tang, Juin J. Liou:
An analytical threshold voltage model of NMOSFETs with hot-carrier induced interface charge effect. 1144-1149 - Yoon-Jong Song, Heung-Jin Joo, Seung-Kuk Kang, Hyun-Ho Kim, Jung-Hoon Park, Y. M. Kang, E. Y. Kang, Sung-Young Lee, Kinam Kim:
Electrical properties of highly reliable 32Mb FRAM with advanced capacitor technology. 1150-1153 - Anirban Saha, S. Chattopadhyay, G. K. Dalapati, S. K. Nandi, Chinmay K. Maiti:
An investigation of electrical and structural properties of Ni-germanosilicided Schottky diode. 1154-1160 - Magali Estrada, Antonio Cerdeira, Luis Reséndiz, Benjamín Iñíguez, Lluís F. Marsal, Josep Pallarès:
Effect of localized traps on the anomalous behavior of the transconductance in nanocrystalline TFTs. 1161-1166 - Nicolas Valdaperez, Jean-Marc Routoure, Daniel Bloyet, Régis Carin, Serge Bardy:
Size effects on the DC characteristics and low frequency noise of double polysilicon NPN bipolar transistors. 1167-1173 - Peter Jacob, Uwe Thiemann, Joachim C. Reiner:
Electrostatic discharge directly to the chip surface, caused by automatic post-wafer processing. 1174-1180 - Jesús Urresti, Salvador Hidalgo, David Flores, Jaume Roig, Ignasi Cortés, José Rebollo:
Lateral punch-through TVS devices for on-chip protection in low-voltage applications. 1181-1186 - Martin Sauter:
Determination of self-heating and thermal resistance in polycrystalline and bulk silicon resistors by DC measurements. 1187-1193 - Walter Smetana, Roland Reicher, H. Homolka:
Improving reliability of thick film initiators for automotive applications based on FE-analyses. 1194-1201 - Halina Niemiec, Antonio Bulgheroni, Massimo Caccia, Piotr Grabiec, Miroslaw Grodner, M. Jastrzab, Wojciech Kucewicz, Krzysztof Kucharski, Stanislaw W. Kuta, Jacek Marczewski:
Monolithic active pixel sensor realized in SOI technology - concept and verification. 1202-1207 - Masayuki Kitajima, Tadaaki Shono:
Reliability study of new SnZnAl lead-free solders used in CSP packages. 1208-1214 - Xiaowu Zhang, Ee-Hua Wong, Ranjan Rajoo, Mahadevan K. Iyer, J. F. J. M. Caers, X. J. Zhao:
Development of process modeling methodology for flip chip on flex interconnections with non-conductive adhesives. 1215-1221 - Y. F. Yao, B. Njoman, K. H. Chua, T. Y. Lin:
New encapsulation development for fine pitch IC devices. 1222-1229 - Wenming Zhang, Guang Meng, Hongguang Li:
Electrostatic micromotor and its reliability. 1230-1242 - Sheng-Jen Hsieh, Sung-Ling Huang:
A methodology for microcontroller signal frequency stress prediction. 1243-1251 - M. Serényi, J. Betko, Ákos Nemcsics, N. Q. Khanh, D. K. Basa, M. Morvic:
Study on the RF Sputtered hydrogenated amorphous silicon-germanium thin films. 1252-1256 - G. Janczyk:
Bipolar mechanisms present in short channel SOI-MOSFET transistors. 1257-1263 - Mansour Jaragh, Ahmed Hasswa:
Implementation, analysis and performance evaluation of the IRP replacement policy. 1264-1269 - Mile K. Stojcev:
Design of Energy-Efficient Application-Specific Instruction Set Processors (ASIPs), Tilman Glokler, Heinrich Meyr, Kluwer Academic Publishers, Boston, 2004, ISBN 1-4020-7730-0, Hardcover, pp 234, plus XX. 1270-1271 - Mile K. Stojcev:
Digital Computer Arithmetic Datapath Design Using Verilog HDL, James E. Stine, Kluwer Academic Publishers, Boston, 2004, ISBN 1-4020-7710-6. Hardcover, pp 180, plus XI. 1272 - Mile K. Stojcev:
Alberto Leon-Garcia, Indra Widjaja, Communication Networks: Fundamental Concepts and Key Architectures, Second edition, McGraw Hill Higher Education, Boston, 2004, ISBN 0-07-119848-2. Hardcover, pp 900, plus XXVII. 1273-1274
Volume 45, Numbers 9-11, September-November 2005
- Nathalie Labat:
Editorial. 1275-1276 - Etienne Sicard, J. M. Dienot:
Issues in electromagnetic compatibility of integrated circuits: emission and susceptibility. 1277-1284 - A. London:
Basic Principles for Managing Foundry Programs. 1285-1292 - Mauro Ciappa:
Lifetime prediction on the base of mission profiles. 1293-1298 - Yunlong Li, Zsolt Tökei, Philippe Roussel, Guido Groeseneken, Karen Maex:
Layout dependency induced deviation from Poisson area scaling in BEOL dielectric reliability. 1299-1304 - Changsoo Hong, Linda S. Milor, Munkang Choi, Tom Lin:
Study of Area Scaling Effect on Integrated Circuit Reliability Based on Yield Models. 1305-1310 - Shih-Hung Chen, Ming-Dou Ker:
Investigation on seal-ring rules for IC product reliability in 0.25-mum CMOS technology. 1311-1316 - J. Y. Seo, K. J. Lee, Y. S. Kim, S. Y. Lee, S. J. Hwang, C. K. Yoon:
Reliability for Recessed Channel Structure n-MOSFET. 1317-1320 - G. Cassanelli, Giovanna Mura, F. Cesaretti, Massimo Vanzi, Fausto Fantini:
Reliability predictions in electronic industrial applications. 1321-1326 - A. Kerlain, V. Mosser:
Robust, versatile, direct low-frequency noise characterization method for material/process quality control using cross-shaped 4-terminal devices. 1327-1330 - Ling-Chang Hu, An-Chi Kang, Eric Chen, J. R. Shih, Yao-Feng Lin, Kenneth Wu, Ya-Chin King:
Gate stress effect on low temperature data retention characteristics of split-gate flash memories. 1331-1336 - G. Ghidini, C. Capolupo, G. Giusto, A. Sebastiani, B. Stragliati, Maria Elena Vitali:
Tunnel oxide degradation under pulsed stress. 1337-1342 - Ninoslav Stojadinovic, Danijel Dankovic, Snezana Djoric-Veljkovic, Vojkan Davidovic, Ivica Manic, Snezana Golubovic:
Negative bias temperature instability mechanisms in p-channel power VDMOSFETs. 1343-1348 - Yannick Rey-Tauriac, J. Badoc, B. Reynard, Raúl Andrés Bianchi, D. Lachenal, Alain Bravaix:
Hot-carrier reliability of 20V MOS transistors in 0.13 mum CMOS technology. 1349-1354 - Michael Nelhiebel, J. Wissenwasser, Thomas Detzel, A. Timmerer, E. Bertagnolli:
Hydrogen-related influence of the metallization stack on characteristics and reliability of a trench gate oxide. 1355-1359 - J. Y. Seo, K. J. Lee, S. Y. Lee, S. J. Hwang, C. K. Yoon:
Dielectric reliability of stacked Al2O3-HfO2 MIS capacitors with cylinder type for improving DRAM data retention characteristics. 1360-1364 - Enrique Miranda, Joel Molina Reyes, Y. Kim, Hiroshi Iwai:
Degradation of high-K LA2O3 gate dielectrics using progressive electrical stress. 1365-1369 - Alain Bravaix, Didier Goguenheim, Mickael Denais, Vincent Huard, C. R. Parthasarathy, F. Perrier, Nathalie Revil, E. Vincent:
Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs. 1370-1375 - Kiyoteru Hayama, Kenichiro Takakura, Hidenori Ohyama, S. Kuboyama, S. Matsuda, Joan Marc Rafí, Abdelkarim Mercha, Eddy Simoen, Cor Claeys:
Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETs. 1376-1381 - Enjun Xiao, P. P. Ghosh, Chuanzhao Yu, J. S. Yuan:
Hot carrier and soft breakdown effects on LNA performance for ultra wideband communications. 1382-1385 - M. A. Exarchos, George J. Papaioannou, Jalal Jomaah, Francis Balestra:
The impact of static and dynamic degradation on SOI "smart-cut" floating body MOSFETs. 1386-1389 - Lidia Aguilera, Marc Porti, Montserrat Nafría, Xavier Aymerich:
Pre- and post-BD electrical conduction of stressed HfO2/SiO2 MOS gate stacks observed at the nanoscale. 1390-1393 - Jin-Wook Lee, Gyoung Ho Buh, Guk-Hyon Yon, Tai-su Park, Yu Gyun Shin, U-In Chung, Joo Tae Moon:
Elimination of surface state induced edge transistors in high voltage NMOSFETs for flash memory devices. 1394-1397 - Jae-Seong Jeong, Jae-Hyun Lee, Jong-Shin Ha, Sang-Deuk Park:
Stress Mechanism about Field Lightning Surge of High Voltage BJT Based Line Driver for ADSL System. 1398-1401 - Chuanzhao Yu, Enjun Xiao, J. S. Yuan:
Voltage stress-induced hot carrier effects on SiGe HBT VCO. 1402-1405 - Gianluca Boselli, Charvaka Duvvury:
Trends and challenges to ESD and Latch-up designs for nanometer CMOS technologies. 1406-1414 - Nicolas Guitard, Fabien Essely, David Trémouilles, Marise Bafleur, Nicolas Nolhier, Philippe Perdu, André Touboul, Vincent Pouget, Dean Lewis:
Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure. 1415-1420 - Heinrich Wolf, Horst A. Gieser, Wolfgang Soldner, Harald Gossner:
A Dedicated TLP Set-Up to Investigate the ESD Robustness of RF Elements and Circuits. 1421-1424 - M. S. B. Sowariraj, Theo Smedes, Peter C. de Jong, Cora Salm, Ton J. Mouthaan, Fred G. Kuper:
A 3-D Circuit Model to evaluate CDM performance of ICs. 1425-1429 - Vesselin K. Vassilev, Vladislav A. Vashchenko, Philippe Jansen, Guido Groeseneken, Marcel ter Beek:
ESD circuit model based protection network optimisation for extended-voltage NMOS drivers. 1430-1435 - Zsolt Tökei, Yunlong Li, G. P. Beyer:
Reliability challenges for copper low-k dielectrics and copper diffusion barriers. 1436-1442 - Arijit Roy, Cher Ming Tan, Rakesh Kumar, Xian Tong Chen:
Effect of test condition and stress free temperature on the electromigration failure of Cu dual damascene submicron interconnect line-via test structures. 1443-1448 - Cher Ming Tan, Arijit Roy, Kok Tong Tan, Derek Sim Kwang Ye, Frankie Low:
Effect of vacuum break after the barrier layer deposition on the electromigration performance of aluminum based line interconnects. 1449-1454 - Jong Hun Kim, Kyosun Kim, Seok Hee Jeon, Jong Tae Park:
Reliability improvement by the suppression of keyhole generation in W-plug vias. 1455-1458 - Kevin Sanchez, Romain Desplats, Felix Beaudoin, Philippe Perdu, J. P. Roux, G. Woods, Dean Lewis:
NIR laser stimulation for dynamic timing analysis. 1459-1464 - Abdellatif Firiti, Felix Beaudoin, Gérald Haller, Philippe Perdu, Dean Lewis, Pascal Fouillat:
Impact of semiconductors material on IR Laser Stimulation signal. 1465-1470 - Stas Polonsky, M. Bhushan, A. Gattiker, Alan J. Weger, Peilin Song:
Photon emission microscopy of inter/intra chip device performance variations. 1471-1475 - Mustapha Remmach, A. Pigozzi, Romain Desplats, Philippe Perdu, Dean Lewis, J. Noel, Sylvain Dudit:
Light Emission to Time Resolved Emission For IC Debug and Failure Analysis. 1476-1481 - Stéphane Grauby, M. Amine Salhi, Wilfrid Claeys, D. Trias, Stefan Dilhaire:
ElectroStatic Discharge Fault Localization by Laser Probing. 1482-1486 - Sanjib Kumar Brahma, Christian Boit, Arkadiusz Glowacki:
Seebeck Effect Detection on Biased Device without OBIRCH Distortion Using FET Readout. 1487-1492 - Alberto Tosi, Franco Stellari, Franco Zappa:
Innovative packaging technique for backside optical testing of wire-bonded chips. 1493-1498 - Marco Buzzo, Mauro Ciappa, Maria Stangoni, Wolfgang Fichtner:
Two-dimensional Dopant Profiling and Imaging of 4H Silicon Carbide Devices by Secondary Electron Potential Contrast. 1499-1504 - Claus Hartmann, Wolfgang Mertin, Gerd Bacher:
Circuit-internal signal measurements with a needle sensor. 1505-1508 - M. Grützner:
Advanced electrical analysis of embedded memory cells using atomic force probing. 1509-1513 - C. De Nardi, Romain Desplats, Philippe Perdu, Felix Beaudoin, J.-L. Gauffier:
Oxide charge measurements in EEPROM devices. 1514-1519 - Gerald Neumann, J. Touzel, Rainer Duschl:
Localization and physical analysis of dielectric weaknesses for state-of-the-art deep trench based DRAM products. 1520-1525 - M.-A. Iannello, L. Tsung:
STEM role in failure analysis. 1526-1531 - Maria Stangoni, Mauro Ciappa, Wolfgang Fichtner:
Assessment of the Analytical Capabilities of Scanning Capacitance and Scanning Spreading Resistance Microscopy Applied to Semiconductor Devices. 1532-1537 - Felix Beaudoin, Kevin Sanchez, Romain Desplats, Philippe Perdu, Jean Marc Nicot, J. P. Roux, M. Otte:
Dynamic Laser Stimulation Case Studies. 1538-1543 - Rudolf Schlangen, Uwe Kerst, A. Kabakow, Christian Boit:
Electrical Performance Evaluation of FIB Edited Circuits through Chip Backside Exposing Shallow Trench Isolations. 1544-1549 - Franco Stellari, Peilin Song, John Hryckowian, Otto A. Torreiter, Steven C. Wilson, Philip Wu, Alberto Tosi:
Characterization of a 0.13 mum CMOS Link Chip using Time Resolved Emission (TRE). 1550-1553 - Joy Y. Liao, G. L. Woods, X. Chen, Howard L. Marks:
Localization of Marginal Circuits for Yield Diagnostics Utilizing a Dynamic Laser Stimulation Probing System. 1554-1557 - U. Muehle, A. Lenk, R. Weiland, H. Lichte:
Characterisation of dopants distribution using electron holography and FIB-based lift-off preparation. 1558-1561 - F. Sibileau, C. Ali, C. Giret, D. Faure:
SRAM cell defect isolation methodology by sub micron probing technique. 1562-1567 - Peter Breitschopf, Guenther Benstetter, Bernhard Knoll, Werner Frammelsberger:
Intermittent contact scanning capacitance microscopy-An improved method for 2D doping profiling. 1568-1571 - Cher Ming Tan, Kim Peng Lim, Tai Chong Chai, Guat Cheng Lim:
Non-destructive identification of open circuit in wiring on organic substrate with high wiring density covered with solder resist. 1572-1575 - S. Barberan, E. Auvray:
Die repackaging for failure analysis. 1576-1580 - Ruggero Pintus, Simona Podda, Massimo Vanzi:
Image alignment for 3D reconstruction in a SEM. 1581-1584 - Giovanni Verzellesi, Gaudenzio Meneghesso, Alessandro Chini, Enrico Zanoni, Claudio Canali:
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues. 1585-1592 - S. Huyghe, Laurent Béchou, Nicolas Zerounian, Yannick Deshayes, Frédéric Aniel, A. Denolle, Dominique Laffitte, Jean-Luc Goudard, Yves Danto:
Electroluminescence spectroscopy for reliability investigations of 1.55 mum bulk semiconductor optical amplifier. 1593-1599 - Cezary Sydlo, Jochen Sigmund, Bastian Mottet, Hans L. Hartnagel:
Reliability investigations on LTG-GaAs photomixers for THz generation based on optical heterodyning. 1600-1604 - Paolo Cova, Nicola Delmonte, Roberto Menozzi:
On state breakdown in PHEMTs and its temperature dependence. 1605-1610 - Naoufel Ismail, Nathalie Malbert, Nathalie Labat, André Touboul, Jean-Luc Muraro, F. Brasseau, D. Langrez:
Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions. 1611-1616 - A. Sozza, Christian Dua, Erwan Morvan, Bertrand Grimbert, Sylvain L. Delage:
A 3000 hours DC Life Test on AlGaN/GaN HEMT for RF and microwave applications. 1617-1621 - O. Pajona, Christelle Aupetit-Berthelemot, R. Lefevre, Jean-Michel Dumas:
Performances and limitations analyses of PHEMT and MHEMT for applications in high bit rate fiber-optic systems. 1622-1625 - H. A. Post, P. Letullier, T. Briolat, R. Humke, R. Schuhmann, K. Saarinen, W. Werner, Yves Ousten, G. Lekens, A. Dehbi:
Failure mechanisms and qualification testing of passive components. 1626-1632 - W. D. van Driel, Marcel A. J. van Gils, Richard B. R. van Silfhout, G. Q. Zhang:
Prediction of Delamination Related IC & Packaging Reliability Problems. 1633-1638 - Dolphin Abessolo-Bidzo, Patrick Poirier, Philippe Descamps, Bernadette Domengès:
Isolating failing sites in IC packages using time domain reflectometry: Case studies. 1639-1644 - Isaline Richard, Romain Fayolle, Jean-Claude Lecomte:
New experimental approach for failure prediction in electronics: Topography and deformation measurement complemented with acoustic microscopy. 1645-1651 - Alexandrine Guédon-Gracia, Eric Woirgard, Christian Zardini:
Correlation between Experimental Results and FE Simulations to Evaluate Lead-Free BGA Assembly Reliability. 1652-1657 - A. Dehbi, Yves Ousten, Yves Danto, Wolfgang Wondrak:
Vibration lifetime modelling of PCB assemblies using steinberg model. 1658-1661 - Kirsten Weide-Zaage, Walter Horaud, Hélène Frémont:
Moisture diffusion in Printed Circuit Boards: Measurements and Finite- Element- Simulations. 1662-1667 - Kheng Chooi Lee, A. Vythilingam, Peter Alpern:
A simple moisture diffusion model for the prediction of optimal baking schedules for plastic SMD packages. 1668-1671 - Tanja Braun, Karl-Friedrich Becker, Mathias Koch, Volker Bader, Rolf Aschenbrenner, Herbert Reichl:
Reliability Potential Of Epoxy Based Encapsulants For Automotive Applications. 1672-1675 - J. Vobecký, D. Kolesnikov:
Reliability of Contacts for Press-Pack High-Power Devices. 1676-1681 - Masanori Usui, Masayasu Ishiko, Koji Hotta, Satoshi Kuwano, Masato Hashimoto:
Effects of uni-axial mechanical stress on IGBT characteristics. 1682-1687 - Michael Heer, Viktor Dubec, M. Blaho, Sergey Bychikhin, Dionyz Pogany, Erich Gornik, Marie Denison, Matthias Stecher, Gerhard Groos:
Automated setup for thermal imaging and electrical degradation study of power DMOS devices. 1688-1693 - Mauro Ciappa, Wolfgang Fichtner, T. Kojima, Y. Yamada, Y. Nishibe:
Extraction of Accurate Thermal Compact Models for Fast Electro-Thermal Simulation of IGBT Modules in Hybrid Electric Vehicles. 1694-1699 - Stephane Azzopardi, A. Benmansour, M. Ishiko, Eric Woirgard:
Assessment of the Trench IGBT reliability: low temperature experimental characterization. 1700-1705 - Andrea Irace, Giovanni Breglio, Paolo Spirito, Romeo Letor, Sebastiano Russo:
Reliability enhancement with the aid of transient infrared thermal analysis of smart Power MOSFETs during short circuit operation. 1706-1710 - Giovanni Busatto, Alberto Porzio, Francesco Velardi, Francesco Iannuzzo, Annunziata Sanseverino, Giuseppe Currò:
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET. 1711-1716 - B. Khong, Patrick Tounsi, Philippe Dupuy, X. Chauffleur, Marc Legros, A. Deram, Colette Levade, G. Vanderschaeve, Jean-Marie Dorkel, Jean-Pierre Fradin:
Innovative Methodology for Predictive Reliability of Intelligent Power Devices Using Extreme Electro-thermal Fatigue. 1717-1722 - Cher Ming Tan, Joe Chiu, Robert Liu, Guan Zhang:
Reliability screening through electrical testing for press-fit alternator power diode in automotive application. 1723-1727 - Cheick Oumar Maïga, Hamid Toutah, Boubekeur Tala-Ighil, Bertrand Boudart:
Trench insulated gate bipolar transistors submitted to high temperature bias stress. 1728-1731 - Mohamed Ali Belaïd, K. Ketata, Karine Mourgues, Hichame Maanane, Mohamed Masmoudi, Jérôme Marcon:
Comparative analysis of accelerated ageing effects on power RF LDMOS reliability. 1732-1737 - Francesco Iannuzzo:
Non-destructive Testing Technique for MOSFET's Characterisation during Soft-Switching ZVS Operations. 1738-1741 - Augusto Tazzoli, Gaudenzio Meneghesso, Enrico Zanoni:
A novel fast and versatile temperature measurement system for LDMOS transistors. 1742-1745 - Walid Lajnef, Jean-Michel Vinassa, Olivier Briat, Eric Woirgard:
Specification and use of pulsed current profiles for ultracapacitors power cycling. 1746-1749 - Jeremy A. Walraven:
Failure Analysis Issues in Microelectromechanical Systems (MEMS). 1750-1757 - Fabrizio Cacchione, Alberto Corigliano, Biagio De Masi, Caterina Riva:
Out of plane vs in plane flexural behaviour of thin polysilicon films: Mechanical characterization and application of the Weibull approach. 1758-1763 - David Veyrié, Djemel Lellouchi, J.-L. Roux, Francis Pressecq, Angie Tetelin, Claude Pellet:
FTIR spectroscopy for the hermeticity assessment of micro-cavities. 1764-1769 - S. Mellé, D. De Conto, L. Mazenq, David Dubuc, B. Poussard, C. Bordas, Katja Grenier, Laurent Bary, Olivier Vendier, J. L. Muraro:
Failure predictive model of capacitive RF-MEMS. 1770-1775 - K. Yacine, F. Flourens, David Bourrier, Ludovic Salvagnac, P. Calmont, Xavier Lafontan, Q.-H. Duong, Lionel Buchaillot, D. Peyrou, Patrick Pons:
Biaxial initial stress characterization of bilayer gold RF-switches. 1776-1781 - M. A. Exarchos, V. Theonas, Patrick Pons, George J. Papaioannou, S. Mellé, David Dubuc, Fabio Coccetti, Robert Plana:
Investigation of charging mechanisms in metal-insulator-metal structures. 1782-1785 - Danick Briand, Felix Beaudoin, Jérôme Courbat, Nico F. de Rooij, Romain Desplats, Philippe Perdu:
Failure analysis of micro-heating elements suspended on thin membranes. 1786-1789 - Q.-H. Duong, Lionel Buchaillot, Dominique Collard, Petra Schmitt, Xavier Lafontan, Patrick Pons, F. Flourens, Francis Pressecq:
Thermal and electrostatic reliability characterization in RF MEMS switches. 1790-1793 - Chuanzhao Yu, J. S. Yuan, Anwar Sadat:
Dynamic stress-induced high-frequency noise degradations in nMOSFETs. 1794-1799 - P. Benoit, Jérémy Raoult, C. Delseny, Fabien Pascal, L. Snadny, J. C. Vildeuil, M. Marin, B. Martinet, D. Cottin, Olivier Noblanc:
Dc and low frequency noise analysis of hot-carrier induced degradation of low complexity 0.13 mum CMOS bipolar transistors. 1800-1806
Volume 45, Number 12, December 2005
- Rolf-Peter Vollertsen, Enrique Miranda:
The TDDB power-law model - Physics and experimental evidences. 1807-1808
- Ernest Y. Wu, Jordi Suñé:
Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability. 1809-1834
- Thomas Pompl, Michael Röhner:
Voltage acceleration of time-dependent breakdown of ultra-thin gate dielectrics. 1835-1841 - G. Ribes, S. Bruyère, Mickael Denais, Frederic Monsieur, Vincent Huard, David Roy, Gérard Ghibaudo:
Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides. 1842-1854 - A. Haggag, N. Liu, D. Menke, M. Moosa:
Physical model for the power-law voltage and current acceleration of TDDB. 1855-1860 - Rainer Duschl, Rolf-Peter Vollertsen:
Is the power-law model applicable beyond the direct tunneling regime? 1861-1867
- Peter Ersland, Roberto Menozzi:
Editorial. 1868
- Yuan Chen, Qing Wang, Sammy Kayali:
A statistical approach to characterizing the reliability of systems utilizing HBT devices. 1869-1874 - William J. Roesch, Dorothy June M. Hamada:
Metal defect yield and reliability relationships. 1875-1881 - Charles S. Whitman, Michael Meeder:
Determining constant voltage lifetimes for silicon nitride capacitors in a GaAs IC process by a step stress method. 1882-1893 - Takayuki Hisaka, Yasuki Aihara, Yoichi Nogami, Hajime Sasaki, Yasushi Uehara, Naohito Yoshida, Kazuo Hayashi:
Degradation mechanisms of GaAs PHEMTs in high humidity conditions. 1894-1900
- Andrzej Dziedzic:
IMAPS Poland 2004 - Guest Editorial. 1901-1902
- Govind G. Umarji, Supriya A. Ketkar, Girish J. Phatak, V. D. Giramkar, Uttam P. Mulik, Dinesh P. Amalnerkar:
An aqueous developable photoimageable silver conductor composition for high density electronic packaging. 1903-1909 - Zbigniew Suszynski, Radoslaw Duer:
Photoacoustic inspection of thermal properties of layered structure with pulse excitations. 1910-1915 - Cho-Liang Chung, Liang-Tien Lu, Yao-Jung Lee:
Influence of halogen-free compound and lead-free solder paste on on-board reliability of green CSP (chip scale package). 1916-1923 - Darko Belavic, Marko Hrovat, Jaroslaw Kita, Janez Holc, Jena Cilensek, Leszek J. Golonka, Andrzej Dziedzic:
Evaluation of compatibility of thick-film PTC thermistors and LTCC structures. 1924-1929 - Wieslaw Zaraska, P. Thor, Marcin Lipinski, M. Ciez, Wojciech Grzesiak, J. Poczatek, Krzysztof Zaraska:
Design and fabrication of neurostimulator implants - selected problems. 1930-1934 - Ryszard Kisiel, Janusz Borecki, Grazyna Koziol, Jan Felba:
Conductive adhesives for through holes and blind vias metallization. 1935-1940 - Marek Wronski, Slawomir Kaminski, Edward Mis, Andrzej Dziedzic:
New trim configurations for laser trimmed thick-film resistors - theoretical analysis, numerical simulation and experimental verification. 1941-1948
- Mile K. Stojcev:
N.G. Jacobson, The In-System Configuration Handbook: A Designer's Guide to ISC, Kluwer Academic Publishers, Boston, 2004, ISBN 1-4020-7655-X. Hardcover, pp 201, plus XVII. 1949-1950 - Mile K. Stojcev:
Gregory A. Matson, Tony R. Taylor, Julie N. Villar, Elements of STIL: Principles and Applications of IEEE Std. 1450, Kluwer Academic Publishers, Boston, 2003, Hardcover, pp 291, plus XIX, ISBN 1-4020-7637-1. 1951-1952
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