"Impacts of the recovery phenomena on the worst-case of damage in DC/AC ..."

Alain Bravaix et al. (2005)

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DOI: 10.1016/J.MICROREL.2005.07.023

access: closed

type: Journal Article

metadata version: 2024-11-04

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Alain Bravaix, Didier Goguenheim, Mickael Denais, Vincent Huard, C. R. Parthasarathy, F. Perrier, Nathalie Revil, E. Vincent:
Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs. Microelectron. Reliab. 45(9-11): 1370-1375 (2005)

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