"Experimental study about gate oxide damages in patterned MOS capacitor ..."

Giovanni Busatto et al. (2009)

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DOI: 10.1016/J.MICROREL.2009.07.012

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type: Journal Article

metadata version: 2024-10-06

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Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi:
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions. Microelectron. Reliab. 49(9-11): 1033-1037 (2009)

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