"Examination and evaluation of La2O3 as gate ..."

Vanessa Capodieci et al. (2005)

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DOI: 10.1016/J.MICROREL.2004.11.021

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type: Journal Article

metadata version: 2024-10-06

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Vanessa Capodieci, Florian Wiest, Torsten Sulima, Jörg Schulze, Ignaz Eisele:
Examination and evaluation of La₂O₃ as gate dielectric for sub-100nm CMOS and DRAM technology. Microelectron. Reliab. 45(5-6): 937-940 (2005)

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