"Temperature dependent time-to-breakdown (TBD) of ..."

N. A. Chowdhury et al. (2009)

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DOI: 10.1016/J.MICROREL.2009.02.003

access: closed

type: Journal Article

metadata version: 2021-10-14

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N. A. Chowdhury, X. Wang, Gennadi Bersuker, Chadwin D. Young, N. Rahim, Durga Misra:
Temperature dependent time-to-breakdown (T_BD) of TiN/HfO₂ n-channel MOS devices in inversion. Microelectron. Reliab. 49(5): 495-498 (2009)

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