"Interfacial properties and reliability of SiO2 grown on 6H-SiC ..."

Pui-To Lai et al. (2004)

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DOI: 10.1016/J.MICROREL.2004.01.009

access: closed

type: Journal Article

metadata version: 2023-10-02

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Pui-To Lai, Jing-Ping Xu, H. P. Wu, C. L. Chan:
Interfacial properties and reliability of SiO₂ grown on 6H-SiC in dry O₂ plus trichloroethylene. Microelectron. Reliab. 44(4): 577-580 (2004)

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