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ORCIDMicroelectronics Reliability, Volume 44
Volume 44, Number 1, January 2004
- Enrique Miranda
, Jordi Suñé:
Electron transport through broken down ultra-thin SiO2 layers in MOS devices. 1-23 - Merlyne M. De Souza, S. K. Manhas, D. Chandra Sekhar, A. S. Oates, Prasad Chaparala:
Influence of mobility model on extraction of stress dependent source-drain series resistance. 25-32 - Steven H. Voldman:
A review of electrostatic discharge (ESD) in advanced semiconductor technology. 33-46 - Hyuck In Kwon, In Man Kang, Byung-Gook Park, Jong Duk Lee, Sang Sik Park, Jung Chak Ahn, Yong Hee Lee:
Effects of electrical stress on mid-gap interface trap density and capture cross sections in n-MOSFETs characterized by pulsed interface probing measurements. 47-51 - Mohamed A. Imam, Mohamed A. Osman, Ashraf A. Osman:
Simulation of partially and near fully depleted SOI MOSFET devices and circuits using SPICE compatible physical subcircuit model. 53-63 - Alain Bravaix, Didier Goguenheim, Nathalie Revil, E. Vincent:
Hole injection enhanced hot-carrier degradation in PMOSFETs used for systems on chip applications with 6.5-2 nm thick gate-oxides. 65-77 - Guillaume Bonnet, Patrick Austin, Jean-Louis Sanchez:
New distributed model of NPT IGBT dedicated to power circuits design. 79-88 - Enhai Zhao, Zeynep Çelik-Butler, Frank Thiel, Ranadeep Dutta:
Origin of 1/f noise in lateral PNP bipolar transistors. 89-94 - Josep Altet, Jean-Michel Rampnoux, Jean-Christophe Batsale, Stefan Dilhaire, Antonio Rubio, Wilfrid Claeys, Stéphane Grauby:
Applications of temperature phase measurements to IC testing. 95-103 - Tong Yan Tee, Zhaowei Zhong:
Integrated vapor pressure, hygroswelling, and thermo-mechanical stress modeling of QFN package during reflow with interfacial fracture mechanics analysis. 105-114 - P. Towashiraporn, G. Subbarayan, B. McIlvanie, B. C. Hunter, D. Love, B. Sullivan:
The effect of model building on the accuracy of fatigue life predictions in electronic packages. 115-127 - Rajendra M. Patrikar, K. Murali, Li Er Ping:
Thermal distribution calculations for block level placement in embedded systems. 129-134 - Jad S. Rasul:
Chip on paper technology utilizing anisotropically conductive adhesive for smart label applications. 135-140 - Jiri Jakovenko, Miroslav Husák, Tibor Lalinsky:
Design and simulation of micromechanical thermal converter for RF power sensor microsystem. 141-148 - Taizo Tomioka, Tomohiro Iguchi, Ikuo Mori:
Thermosonic flip-chip bonding for SAW filter. 149-154 - Jong-heon Kim, In-Soo Kang, Chi-jung Song, Young-Jik Hur, Hak-Nam Kim, Esdy Baek, Tae-Jun Seo:
Flip-chip packaging solution for CMOS image sensor device. 155-161 - Enrique Miranda, E. Mallaina:
Single-equation model for low and high voltage soft breakdown conduction. 163-166 - Kyung-Seob Kim, H. I. Kim, C. H. Yu, E. G. Chang:
Fatigue analysis of high-speed photodiode submodule by using FEM. 167-171 - Mile K. Stojcev, Goran Lj. Djordjevic, Tatjana R. Stankovic:
Implementation of self-checking two-level combinational logic on FPGA and CPLD circuits. 173-178 - Mile K. Stojcev:
System on chip design languages; Anne Mignotte, Eugenio Villar, Lynn Horobin, editors, Kluwer Academic Publishers, Boston, 2002. Hardcover, pp 283, plus IX, ISBN 1-4020-7046-2. 179 - Mile K. Stojcev:
Design criteria for low distortion in feedback OPAMP circuits; Bjornar Hernes, Trond Saether, Kluwer Academic Publishers, Boston, 2003. Hardcover, pp 160, plus XXV, ISBN 1-4020-7356-9. 181-182
Volume 44, Number 2, February 2004
- Young-Hee Kim, Jack C. Lee:
Reliability characteristics of high-k dielectrics. 183-193 - Christine S. Hau-Riege:
An introduction to Cu electromigration. 195-205 - Yi-Mu Lee, Yider Wu, Gerald Lucovsky:
Breakdown and reliability of p-MOS devices with stacked RPECVD oxide/nitride gate dielectric under constant voltage stress. 207-212 - Chih-Yao Huang, Wei-Fang Chen, Song-Yu Chuan, Fu-Chien Chiu, Jeng-Chou Tseng, I-Cheng Lin, Chuan-Jane Chao, Len-Yi Leu, Ming-Dou Ker:
Design optimization of ESD protection and latchup prevention for a serial I/O IC. 213-221 - A. Bouhdada, R. Marrakh, F. Vigué, J.-P. Faurie:
Modeling of the spectral response of PIN photodetectors Impact of exposed zone thickness, surface recombination velocity and trap concentration. 223-228 - Takeshi Yanagisawa, Takeshi Kojima, Tadamasa Koyanagi:
Behavior of Cu(In, Ga)Se2 solar cells under light/damp heat over time. 229-235 - Hyun Ho Kim, Byeong Kwon Ju, Yun Hi Lee, Si Hyung Lee, Jeon Kook Lee, Soo Won Kim:
Fabrication of suspended thin film resonator for application of RF bandpass filter. 237-243 - Simone Lee, Ramesh Ramadoss, Michael Buck, V. M. Bright, K. C. Gupta, Y. C. Lee:
Reliability testing of flexible printed circuit-based RF MEMS capacitive switches. 245-250 - Yi Tao, Ajay P. Malshe, William D. Brown:
Selective bonding and encapsulation for wafer-level vacuum packaging of MEMS and related micro systems. 251-258 - Jason Y. L. Goh, Mark C. Pitter, Chung W. See, Michael G. Somekh, Daniel Vanderstraeten:
Sub-pixel image correlation: an alternative to SAM and dye penetrant for crack detection and mechanical stress localisation in semiconductor packages. 259-267 - Ikuo Shohji, Hideo Mori, Yasumitsu Orii:
Solder joint reliability evaluation of chip scale package using a modified Coffin-Manson equation. 269-274 - Daniel T. Rooney, N. Todd Castello, Mike Cibulsky, Doug Abbott, Dongji Xie:
Materials characterization of the effect of mechanical bending on area array package interconnects. 275-285 - Cristina Lopez, Liang Chai, Aziz Shaikh, Vern Stygar:
Wire bonding characteristics of gold conductors for low temperature co-fired ceramic applications. 287-294 - Y. P. Wu, M. O. Alam, Yan Cheong Chan, B. Y. Wu:
Dynamic strength of anisotropic conductive joints in flip chip on glass and flip chip on flex packages. 295-302 - Katsuhito Yoshida, Hideaki Morigami:
Thermal properties of diamond/copper composite material. 303-308 - Barbara Pahl, Christine Kallmayer, Rolf Aschenbrenner, Herbert Reichl:
Long time reliability study of soldered flip chips on flexible substrates. 309-314 - Seok Hwan Moon, Gunn Hwang, Sang Choon Ko, Youn Tae Kim:
Experimental study on the thermal performance of micro-heat pipe with cross-section of polygon. 315-321 - Esther Wai Ching Yau, Jing Feng Gong, Philip Chan:
Al surface morphology effect on flip-chip solder bump shear strength. 323-331 - Arun Ramakrishnan, Michael G. Pecht:
Load characterization during transportation. 333-338 - Juan A. Carrasco, Víctor Suñé:
Combinatorial methods for the evaluation of yield and operational reliability of fault-tolerant systems-on-chip. 339-350 - Wladyslaw Dabrowski, Pawel Grybos, Tomasz Fiutowski:
Design for good matching in multichannel low-noise amplifier for recording neuronal signals in modern neuroscience experiments. 351-361 - Mile K. Stojcev:
Interconnecting and Computing over Satellite Networks; Yongguang Zhang (Ed.). Kluwer Academic Publishers, Boston, 2003. Hardcover, pp 262, plus XXII, ISBN 1-4020-7424-7. 363-364
Volume 44, Number 3, March 2004
- Baozhen Li, Timothy D. Sullivan, Tom C. Lee, Dinesh Badami:
Reliability challenges for copper interconnects. 365-380 - Ming-C. Cheng, Feixia Yu, Lin Jun, Min Shen, Goodarz Ahmadi:
Steady-state and dynamic thermal models for heat flow analysis of silicon-on-insulator MOSFETs. 381-396 - Greg G. Freeman, Jae-Sung Rieh, Zhijian Yang, Fernando J. Guarín:
Reliability and performance scaling of very high speed SiGe HBTs. 397-410 - K.-H. Allers:
Prediction of dielectric reliability from I-V characteristics: Poole-Frenkel conduction mechanism leading to sqrt(E) model for silicon nitride MIM capacitor. 411-423 - Kyungmee O. Kim, Way Kuo, Wen Luo:
A relation model of gate oxide yield and reliability. 425-434 - Xiangbin Zeng, X. W. Sun, Junfeng Li, Johnny K. O. Sin:
Improving reliability of poly-Si TFTs with channel layer and gate oxide passivated by NH3/N2O plasma. 435-442 - Pierre Temple-Boyer, Jérôme Launay, Iryna Humenyuk, Thierry Do Conto, Augustin Martinez, C. Bériet, A. Grisel:
Study of front-side connected chemical field effect transistor for water analysis. 443-447 - S. Nakajima, S. Nakamura, T. Ueki, T. Sakai:
Sample preparation techniques for physical analysis of VLSIs. 449-458 - Jie-Hua Zhao:
A three-parameter Weibull-like fitting function for flip-chip die strength data. 459-470 - Yu Gu, Toshio Nakamura:
Interfacial delamination and fatigue life estimation of 3D solder bumps in flip-chip packages. 471-483 - S. Nurmi, J. Sundelin, Eero Ristolainen, T. Lepistö:
The effect of solder paste composition on the reliability of SnAgCu joints. 485-494 - S. C. Tan, Y. C. Chan, Y. W. Chiu, C. W. Tan:
Thermal stability performance of anisotropic conductive film at different bonding temperatures. 495-503 - M. A. Uddin, M. O. Alam, Yan Cheong Chan, H. P. Chan:
Adhesion strength and contact resistance of flip chip on flex packages--effect of curing degree of anisotropic conductive film. 505-514 - Tadanori Shimoto, Katsumi Kikuchi, Kazuhiro Baba, Koji Matsui, Hirokazu Honda, Keiichiro Kata:
High-performance FCBGA based on multi-layer thin-substrate packaging technology. 515-520 - Beth Keser, Li Wetz, Jerry White:
WL-CSP reliability with various solder alloys and die thicknesses. 521-531 - Li Zhang, Vivek Arora, Luu Nguyen, Nikhil Kelkar:
Numerical and experimental analysis of large passivation opening for solder joint reliability improvement of micro SMD packages. 533-541 - R. Khlil, Abdelillah El Hdiy, A. F. Shulekin, S. E. Tyaginov, M. I. Vexler:
Soft breakdown of MOS tunnel diodes with a spatially non-uniform oxide thickness. 543-546 - Mile K. Stojcev:
Power-Constrained Testing of VLSI Circuits. Nikola Nikolici, Bashir M. Al-Hashimi. Kluwer Academic Publishers, Boston, 2003. Hardcover, pp 178, plus XI, ISBN 1-4020-7235-X. 547-548
Volume 44, Number 4, April 2004
- Jorge Salcedo-Suñer, Charvaka Duvvury, Roger Cline, Alfonso Cadena-Hernandez:
Latchup in voltage tolerant circuits: a new phenomenon. 549-562 - J. A. Felix, J. R. Schwank, Daniel M. Fleetwood, M. R. Shaneyfelt, Evgeni P. Gusev:
Effects of radiation and charge trapping on the reliability of high-kappa gate dielectrics. 563-575 - Pui-To Lai, Jing-Ping Xu, H. P. Wu, C. L. Chan:
Interfacial properties and reliability of SiO2 grown on 6H-SiC in dry O2 plus trichloroethylene. 577-580 - Guo Lihui, Zhang Yibin, Su Yong Jie Jeffrey:
Integrating thick copper/Black DiamondTM layer in CMOS interconnect process for RF passive components. 581-585 - Teija Uusluoto, Paavo Jalonen, Harri Laaksonen, Aulis Tuominen:
Metallization of microvias by sputter-deposition. 587-593 - N. H. Yeung, Victor Lau, Y. C. Chan:
Bias-HAST on tape ball grid array (TBGA) test pattern. 595-602 - T. Y. Lin, B. Njoman, D. Crouthamel, K. H. Chua, S. Y. Teo, Y. Y. Ma:
The impact of moisture in mold compound preforms on the warpage of PBGA packages. 603-609 - Xiaowu Zhang, Ee-Hua Wong, Charles Lee, Tai Chong Chai, Yiyi Ma, Poi-Siong Teo, D. Pinjala, Srinivasamurthy Sampath:
Thermo-mechanical finite element analysis in a multichip build up substrate based package design. 611-619 - Kyoungsoon Cho, Insu Jeon:
Numerical analysis of the warpage problem in TSOP. 621-626 - Chia-Tai Kuo, Ming-Chuen Yip, Kuo-Ning Chiang:
Time and temperature-dependent mechanical behavior of underfill materials in electronic packaging application. 627-638 - Anne Seppälä, Eero Ristolainen:
Study of adhesive flip chip bonding process and failure mechanisms of ACA joints. 639-648 - Juan Santana, Magali Estrada, Ofelia Martinez:
Editorial. 649 - Iosvany León Monzón, Ricardo Amador Pérez, Karl Kohlhof:
Evaluation of MUMPS polysilicon structures for thermal flow sensors. 651-655 - Fernando da Rocha Paixão Cortes, Eric E. Fabris, Sergio Bampi:
Analysis and design of amplifiers and comparators in CMOS 0.35 mum technology. 657-664 - Alessandro Girardi, Sergio Bampi:
AC analysis of an inverter amplifier using minimum-length trapezoidal association of transistors. 665-671 - José Ernesto Rayas-Sánchez:
A frequency-domain approach to interconnect crosstalk simulation and minimization. 673-681 - Joaquín Louzao, Santiago Paz, Daniel Tejera, Gustavo Bellora, Guillermo Langwagen:
Architectural design of a programmable cell for the implementation of a filter bank on FPGA. 683-695 - Luciano Volcan Agostini, Ivan Saraiva Silva, Sergio Bampi:
Parallel color space converters for JPEG image compression. 697-703 - Gang Qu, Miodrag Potkonjak, Mile K. Stojcev:
Book review: Intellectual property protection in VLSI designs: Theory and practice, Hardcover, pp 183, plus XIX, Kluwer Academic Publishers, Boston, 2003, ISBN 1-4020-7320-8. 705-706 - Mile K. Stojcev:
Power estimation and optimization for VLIW-based embedded systems; Vittorio Zaccaria, Mariagiovanna Sami, Donatella Sciuto, Cristina Silvano. Hardcover, pp 203, plus XXIV, Kluwer Academic Publishers, Boston, 2003. ISBN 1-4020-7377-1. 707-708
Volume 44, Number 5, May 2004
- Bing-Liang Yang, P. T. Lai, Hei Wong:
Conduction mechanisms in MOS gate dielectric films. 709-718 - Paul S. Ho, Guotao Wang, Min Ding, Jie-Hua Zhao, Xiang Dai:
Reliability issues for flip-chip packages. 719-737 - Domenico Caputo, Fernanda Irrera:
On the reliability of ZrO2 films for VLSI applications. 739-745 - A. V. Vairagar, S. G. Mhaisalkar, Ahila Krishnamoorthy:
Electromigration behavior of dual-damascene Cu interconnects--Structure, width, and length dependences. 747-754 - Peter Z. F. Shi, Albert C. W. Lu, Y. M. Tan, Stephen C. K. Wong, Eric Tan, Ronson Tan:
Thermal design and experimental validation for optical transmitters. 755-769 - Yoshiteru Yamada, Hirotaka Komoda:
An example of fault site localization on a 0.18 mum CMOS device with combination of front and backside techniques. 771-778 - Zhimin Mo, Helge Kristiansen, Morten Eliassen, Shiming Li, Johan Liu:
Study on thermomechanical reliability of a tunable light modulator. 779-785 - Mark A. Fritz, Daniel T. Cassidy:
Extraction of bonding strain data in diode lasers from polarization-resolved photoluminescence measurements. 787-796 - Dionysios Manessis, Rainer Patzelt, Andreas Ostmann, Rolf Aschenbrenner, Herbert Reichl:
Technical challenges of stencil printing technology for ultra fine pitch flip chip bumping. 797-803 - Frank Stepniak:
Mechanical loading of flip chip joints before underfill: the impact on yield and reliability. 805-814 - Rashed Adnan Islam, Y. C. Chan:
Effect of microwave preheating on the bonding performance of flip chip on flex joint. 815-821 - C. W. Tan, Y. C. Chan, H. P. Chan, N. W. Leung, C. K. So:
Investigation on bondability and reliability of UV-curable adhesive joints for stable mechanical properties in photonic device packaging. 823-831 - Jinlin Wang, H. K. Lim, H. S. Lew, Woon Theng Saw, Chew Hong Tan:
A testing method for assessing solder joint reliability of FCBGA packages. 833-840 - X. Q. Shi, John H. L. Pang, X. R. Zhang:
Investigation of long-term reliability and failure mechanism of solder interconnections with multifunctional micro-moiré interferometry system. 841-852 - L. Han, Arkady Voloshin:
Statistical analysis for test lands positioning and PCB deformation during electrical testing. 853-859 - Pawel Sniatala, André S. Botha:
A/D converter based on a new memory cell implemented using the switched current technique. 861-867 - Aránzazu Otín, Santiago Celma, Concepción Aldea:
Digitally programmable CMOS transconductor for very high frequency. 869-875 - Oliver Mitea, Manfred Glesner:
A power-constrained design strategy for CMOS tuned low noise amplifiers. 877-883 - V. Sánchez, J. Munguía, Magali Estrada:
Photo-CVD process for ultra thin SiO2 films. 885-888
Volume 44, Number 6, June 2004
- Vassil Palankovski, Siegfried Selberherr:
Rigorous modeling of high-speed semiconductor devices. 889-897 - David Dubuc, M. Saddaoui, S. Mellé, F. Flourens, L. Rabbia, Benoit Ducarouge, Katja Grenier, Patrick Pons, Ali Boukabache, Laurent Bary:
Smart MEMS concept for high secure RF and millimeterwave communications. 899-907 - Rolf-Peter Vollertsen, Ernest Y. Wu:
Voltage acceleration and t63.2 of 1.6-10 nm gate oxides. 909-916 - Insu Jeon, Young-Bae Park:
Analysis of the reservoir effect on electromigration reliability. 917-928 - Zoubir Khatir, Stéphane Lefebvre:
Boundary element analysis of thermal fatigue effects on high power IGBT modules. 929-938 - Maximilian Dammann, Arnulf Leuther, Rüdiger Quay, M. Meng, Helmer Konstanzer, W. Jantz, Michael Mikulla:
Reliability of 70 nm metamorphic HEMTs. 939-943 - Hassène Mnif, Thomas Zimmer, Jean Luc Battaglia, Sébastien Fregonese:
Representation of the SiGe HBT's thermal impedance by linear and recursive networks. 945-950 - Yu Ying, Peter Grant:
Deformation measurement of RF MEMS switches by optical interference. 951-955 - Yingxue Shi, Jing Li, Guijun Hu, Sumei Zhang, Xuedan Wang, Jiawei Shi:
Effects of annealing on the electric noise in semiconductor lasers. 957-961 - Zoran Radivojevic, Klas Andersson, Jeroen A. Bielen, Paul J. van der Wel, Jukka Rantala:
Operating limits for RF power amplifiers at high junction temperatures. 963-972 - C. D. Breach, F. Wulff:
New observations on intermetallic compound formation in gold ball bonds: general growth patterns and identification of two forms of Au4Al. 973-981 - Jong-Min Kim, Yong-Eui Shin, Kozo Fujimoto:
Dynamic modeling for resin self-alignment mechanism. 983-992 - Markus P. K. Turunen, Pekka Marjamäki, Matti Paajanen, Jouko Lahtinen, Jorma K. Kivilahti:
Pull-off test in the assessment of adhesion at printed wiring board metallisation/epoxy interface. 993-1007 - Frøydis Oldervoll, Frode Strisland:
Wire-bond failure mechanisms in plastic encapsulated microcircuits and ceramic hybrids at high temperatures. 1009-1015 - Alireza Ejlali, Seyed Ghassem Miremadi:
FPGA-based Monte Carlo simulation for fault tree analysis. 1017-1028 - Mile K. Stojcev:
Oversampled delta-sigma modulators: analysis applications and novel topologies; Mücahit Kozak, Izzet Kale. Kluwer Academic Publishers, Boston. 2003. Hardcover, pp 226, plus XII, ISBN 1-4020-7420-4. 1029
Volume 44, Number 7, July 2004
- Peter Ersland, Roberto Menozzi:
Editorial. 1031 - Yeong-Chang Chou, D. Leung, Ioulia Smorchkova, Mike Wojtowicz, R. Grundbacher, L. Callejo, Q. Kan, R. Lai, P. H. Liu, D. Eng:
Degradation of AlGaN/GaN HEMTs under elevated temperature lifetesting. 1033-1038 - Peter Ersland, Hei-Ruey Jen, Xinxing Yang:
Lifetime acceleration model for HAST tests of a pHEMT process. 1039-1045 - William J. Roesch, Suwanna Jittinorasett:
Cycling copper flip chip interconnects. 1047-1054 - Bruce M. Paine, Timothy J. Perham, Stephen Thomas III:
High-resolution transmission electron microscopy on aged InP HBTs. 1055-1060 - Satbir S. Madra:
Role of carrier depletion effects and material properties in advanced microscale thermal modeling of N-GaInP-Si/p-GaAs-C heterojunction bipolar transistor (HBT) devices. 1061-1068 - Chun-Hsing Shih, Yi-Min Chen, Chen-Hsin Lien:
Design strategy of localized halo profile for achieving sub-50 nm bulk MOSFET. 1069-1075 - M. Marin, Y. Akue Allogo, M. de Murcia, P. Llinares, J. C. Vildeuil:
Low frequency noise characterization in 0.13 mum p-MOSFETs. Impact of scaled-down 0.25, 0.18 and 0.13 mum technologies on 1/f noise. 1077-1085 - Qungang Ma, Yuejin Li, Yintang Yang:
Study of swing potential on deep submicron on-chip interconnect. 1087-1091 - T. K. Chiang:
A two-dimensional analytical subthreshold behavior model for short-channel AlGaAs/GaAs HFETs. 1093-1099 - L. Yang, Asen Asenov, Jeremy R. Watling, M. Boriçi, John R. Barker, Scott Roy, K. Elgaid, Iain Thayne, T. Hackbarth:
Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs. 1101-1107 - A. Sozza, Christian Dua, A. Kerlain, C. Brylinski, Enrico Zanoni:
Long-term reliability of Ti-Pt-Au metallization system for Schottky contact and first-level metallization on SiC MESFET. 1109-1113 - Adam Golda, Andrzej Kos:
Temperature influence on energy losses in MOSFET capacitors. 1115-1121 - Milan Jevtic:
Low frequency noise as a tool to study optocouplers with phototransistors. 1123-1129 - Tong Yan Tee, Hun Shen Ng, Chwee Teck Lim, Eric Pek, Zhaowei Zhong:
Impact life prediction modeling of TFBGA packages under board level drop test. 1131-1142 - Hongfang Wang, Mei Zhao, Qiang Guo:
Vibration fatigue experiments of SMT solder joint. 1143-1156 - Ashish Batra, Pradeep Ramachandran, Poornima Sathyanarayanan, Susan Lu, Hari Srihari:
Reliability enhancement of electronic packages by design of optimal parameters. 1157-1163 - Hyong Tae Kim, Chang Seop Song, Hae Jeong Yang:
2-Step algorithm for automatic alignment in wafer dicing process. 1165-1179 - Octavio A. Leon, Gilbert De Mey, Erik Dick, Jan A. Vierendeels:
Staggered heat sinks with aerodynamic cooling fins. 1181-1187 - Belén Calvo, Santiago Celma, Maria Teresa Sanz, Pedro A. Martínez:
A high-linear wide-tunable CMOS transconductor for video frequency applications. 1189-1198 - Y. L. Goh, Duu Sheng Ong:
Analytical investigation of dead space effect under near-breakdown conditions in GaInP/GaAs composite double heterojunction bipolar transistors. 1199-1202 - Mile K. Stojcev:
Networks on Chip; Axel Jantsch, Hannu Tenhunen (Eds.). Kluwer Academic Publishers, Boston; 2003. Hardcover, pp 303, plus VIII, ISBN 1-4020-7392-5. 1203-1204 - Mile K. Stojcev:
Memory architecture exploration for programmable embedded systems; Peter Grun, Nikil Dutt, Alexandru Nicolau. Kluwer Academic Publishers, Boston. 2003. Hardcover, pp 128, plus XVII, ISBN 1-4020-7324-0. 1205-1206
Volume 44, Number 8, August 2004
- Rolf-Peter Vollertsen:
Fast wafer level reliability: methods and experiences. 1207-1208 - Andreas Martin, Rolf-Peter Vollertsen:
An introduction to fast wafer level reliability monitoring for integrated circuit mass production. 1209-1231 - Summer F. C. Tseng, Wei-Ting Kary Chien, Excimer Gong, Willings Wang, Bing-Chu Cai:
Some practical considerations for effective and efficient wafer-level reliability control. 1233-1243 - David Smeets, Josef Fazekas:
Quantifying charging damage in gate oxides of antenna structures for WLR monitoring. 1245-1250 - Werner Muth, Wolfgang Walter:
Bias temperature instability assessment of n- and p-channel MOS transistors using a polysilicon resistive heated scribe lane test structure. 1251-1262 - Barry O'Connell, Prasad Chaparala, Bhola Mehrotra:
Evaluation of performance-reliability trade-offs in a Si-Ge BiCMOS process using fast wafer level techniques. 1263-1268 - Guoqiao Tao, Andrea Scarpa, Leo van Marwijk, Kitty van Dijk, Fred G. Kuper:
Applying the fWLR concept to Stress induced leakage current in non-volatile memory processes. 1269-1273 - Mile K. Stojcev:
Reliability of Computer Systems and Networks: Fault Tolerance, Analysis and Design; Martin L. Shooman. John Wiley and Sons Inc., New York; 2002. Hardcover, pp 528, plus XXII. 1275-1276 - Mile K. Stojcev:
Power Distribution Networks in High Speed Integrated Circuits; Andrey Mezhiba, Eby Friedman. Kluwer Academic Publishers, Boston; 2004. Hardcover, 280pp, plus XXIII, ISBN 1-4020-7534-0. 1277-1278 - Mile K. Stojcev:
Digital design and computer architecture; Hassan A. Farhat. CRC Press, Boca Raton: 2004. Hardcover, 487pp, plus XXII. ISBN 0-8493-1191-8. 1279-1280
Volume 44, Numbers 9-11, September - November 2004
- C. K. Chen, W. A. Tan, H. S. Goh, Y. S. Yip, W. T. Saw:
Full ball shear metrology as defect detection and analysis tool for solder joint reliability assessment on direct immersion gold technology. 1281-1285 - Müge Erinc, Piet J. G. Schreurs, G. Q. Zhang, Marc G. D. Geers:
Characterization and fatigue damage simulation in SAC solder joints. 1287-1292 - Peter Alpern, Kheng Chooi Lee, Rainer Tilgner:
Effect of long and short Pb-free soldering profiles of IPC/JEDEC J-STD-020 on plastic SMD packages. 1293-1297 - Geneviève Duchamp, Frédéric Verdier, Yannick Deshayes, François Marc, Yves Ousten, Yves Danto:
Reliability of Low-Cost PCB Interconnections for Telecommunication Applications. 1299-1304 - Laura Frisk, Anne Seppälä, Eero Ristolainen:
Effect of bonding pressure on reliability of flip chip joints on flexible and rigid substrates. 1305-1310 - Hélène Frémont, Jean-Yves Delétage, Kirsten Weide-Zaage, Yves Danto:
How to study delamination in plastic encapsulated devices. 1311-1316 - Marcel A. J. van Gils, P. J. J. H. A. Habets, G. Q. Zhang, Willem D. van Driel, Piet J. G. Schreurs:
Characterization and Modelling of Moisture Driven Interface Failures. 1317-1322 - C. Zhang, P. Yalamanchili, M. Al-Sheikhley, Aris Christou:
Metal migration in epoxy encapsulated ECL devices. 1323-1330 - Alexandrine Guédon-Gracia, Pascal Roux, Eric Woirgard, Christian Zardini:
Influence of the thermo-mechanical residual state on the power assembly modellization. 1331-1335 - Laurent Mendizabal, Laurent Béchou, Yannick Deshayes, Frédéric Verdier, Yves Danto, Dominique Laffitte, Jean-Luc Goudard, F. Houé:
Study of influence of failure modes on lifetime distribution prediction of 1.55 μm DFB Laser diodes using weak drift of monitored parameters during ageing tests. 1337-1342 - Stéphane Moreau, Thierry Lequeu, Robert Jérisian:
Comparative study of thermal cycling and thermal shocks tests on electronic components reliability. 1343-1347 - G. Q. Zhang, Jaap Bisschop:
Integrated thermo-mechanical design and qualification of wafer backend structures. 1349-1354 - Mathieu Paillard, C. Schaffauser, Claude Drevon, Jean Louis Cazaux, Hans Reinhard Schubach, F. Frese:
Non destructive control of flip chip packages for space applications. 1355-1359 - Nathalie Labat, Nathalie Malbert, Cristell Maneux, André Touboul:
Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors. 1361-1368 - A. Sozza, Christian Dua, Erwan Morvan, Bertrand Grimbert, V. Hoel, Sylvain L. Delage, N. Chaturvedi, Richard Lossy, Joachim Würfl:
Reliability Investigation of Gallium Nitride HEMT. 1369-1373 - Fabiana Rampazzo, Roberto Pierobon, D. Pacetta, Christophe Gaquière, Didier Théron, Bertrand Boudart, Gaudenzio Meneghesso, Enrico Zanoni:
Hot carrier aging degradation phenomena in GaN based MESFETs. 1375-1380 - Paolo Cova, Nicola Delmonte, Giovanna Sozzi, Roberto Menozzi:
Temperature-dependent breakdown and hot carrier stress of PHEMTs. 1381-1385 - Brice Grandchamp, Cristell Maneux, Nathalie Labat, André Touboul, Thomas Zimmer:
On-wafer low frequency noise measurements of SiGe HBTs: Impact of technological improvements on 1/f noise. 1387-1392 - Jae-Seong Jeong, Jong-Shin Ha, Sang-Deuk Park:
Field Failure Mechanism Investigation of GaAs based HBT Power Amplifier Mmodule (PAM). 1393-1398 - Gerald Sölkner, Winfried Kaindl, Hans-Joachim Schulze, Gerhard K. M. Wachutka:
Reliability of power electronic devices against cosmic radiation-induced failure. 1399-1406 - Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Alberto Porzio, Annunziata Sanseverino, Giuseppe Currò, Alessandra Cascio, Ferruccio Frisina:
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure. 1407-1411 - Michael Goroll, Reinhard Pufall, Werner Kanert, Boris Plikat:
Semiconductors in high temperature applications - a future trend in automotive industry. 1413-1417 - Alberto Castellazzi, H. Schwarzbauer, Doris Schmitt-Landsiedel:
Analysis of PowerMOSFET chips failed in thermal instability. 1419-1424 - Jan-Henning Fabian, Samuel Hartmann, Amina Hamidi:
Partial Discharge Failure Analysis of AIN Substrates for IGBT Modules. 1425-1430 - Masayasu Ishiko, Koji Hotta, Sachiko Kawaji, Takahide Sugiyama, Tomoyuki Shouji, Takeshi Fukami, Kimimori Hamada:
Investigation of IGBT turn-on failure under high applied voltage operation. 1431-1436 - Paolo Cova, Fioravante Fasce, Pietro Pampili, Marco Portesine, Giovanna Sozzi, Pier Enrico Zani:
High reliable high power diode for welding applications. 1437-1441 - Giovanni Busatto, Luigi Fratelli, Carmine Abbate, Roberta Manzo, Francesco Iannuzzo:
Analysis and optimisation through innovative driving strategy of high power IGBT performances/EMI reduction trade-off for converter systems in railway applications. 1443-1448 - Hichame Maanane, Pierre Bertram, Jérôme Marcon, Mohamed Masmoudi, Mohamed Ali Belaïd, Karine Mourgues, Philippe Eudeline, K. Ketata:
Reliability study of Power RF LDMOS for Radar Application. 1449-1454 - E. D'Arcangelo, Andrea Irace, Giovanni Breglio, Paolo Spirito:
Experimental characterization of temperature distribution on Power MOS devices during Unclamped Inductive Switching. 1455-1459 - Cheick Oumar Maïga, Hamid Toutah, Boubekeur Tala-Ighil, Bertrand Boudart:
Comparison Between the Behaviour of Punch-Through and Non-Punch-Through Insulated Gate Bipolar Transistors Under High Temperature Reverse Bias Stress. 1461-1465 - Laurence Allirand, Bernard Regairaz:
Passivation schemes to improve power devices HAST robustness. 1467-1471 - Tesfaye Ayalew, Andreas Gehring, Tibor Grasser, Siegfried Selberherr:
Enhancement of breakdown voltage for Ni-SiC Schottky diodes utilizing field plate edge termination. 1473-1478 - J. Y. Kim, S. W. Park, M. C. Jung, C. H. Kim, Man Young Sung, D. H. Rhie, Ey Goo Kang, N. G. Kim, S. C. Kim:
Compare of SOI and SOS LIGBT structure for the thermal conductivity and self-heating characteristics. 1479-1483 - Thomas Detzel, Michael Glavanovics, Karin Weber:
Analysis of wire bond and metallization degradation mechanisms in DMOS power transistors stressed under thermal overload conditions. 1485-1490 - J. W. McPherson:
Mie-Grüneisen Analysis of the Molecular Bonding States in Silica Which Impact Time-Dependent Dielectric Breakdown. 1491-1496 - A. Nannipieri, Giuseppe Iannaccone, Felice Crupi:
Extraction of the trap distribution responsible for SILCs in MOS structures from the measurements and simulations of DC and noise properties. 1497-1501 - Zhichun Wang, Jan Ackaert, Cora Salm, Fred G. Kuper, Eddy De Backer:
Plasma Charging Damage Reduction in IC Processing by A Self-balancing Interconnect. 1503-1507 - Gennadi Bersuker, Jang H. Sim, Chadwin D. Young, Rino Choi, Peter Zeitzoff, George A. Brown, Byoung Hun Lee, Robert W. Murto:
Effect of Pre-Existing Defects on Reliability Assessment of High-K Gate Dielectrics. 1509-1512 - Y. H. Kim, Rino Choi, R. Jha, J. H. Lee, Veena Misra, J. C. Lee:
Reliability of High-K Dielectrics and Its Dependence on Gate Electrode and Interfacial / High-K Bi-Layer Structure. 1513-1518 - Raul Fernández, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich:
A new approach to the modeling of oxide breakdown on CMOS circuits. 1519-1522 - Marc Porti, S. Meli, Montserrat Nafría, Xavier Aymerich:
Standard and C-AFM tests to study the post-BD gate oxide conduction of MOS devices after current limited stresses. 1523-1528 - Alberto Tosi, Mustapha Remmach, Romain Desplats, Franco Zappa, Philippe Perdu:
Implementation of TRE systems into Emission Microscopes. 1529-1534 - Steven Kasapi, Bruce Cory:
Overcoming Fault Test Coverage with Time-Resolved Emission (TRE) Probing. 1535-1539 - Thomas Schweinböck, S. Schömann, D. Álvarez, Marco Buzzo, Werner Frammelsberger, Peter Breitschopf, Günther Benstetter:
New trends in the application of Scanning Probe Techniques in Failure Analysis. 1541-1546 - Ruggero Pintus, Simona Podda, Francesca Mighela, Massimo Vanzi:
Quantitative 3D reconstruction from BS imaging. 1547-1552 - D. Martin, Romain Desplats, Gérald Haller, Pascal Nouet, Florence Azaïs:
Automated Diagnosis and Probing Flow for Fast Fault Localization in IC. 1553-1558 - Olivier Crépel, Patrick Poirier, Philippe Descamps, Romain Desplats, Philippe Perdu, Gérald Haller, Abdellatif Firiti:
Magnetic Microscopy for IC Failure Analysis: Comparative Case Studies using SQUID, GMR and MTJ systems. 1559-1563 - M. H. Ji, C.-H. Choi, B. K. Jang, B. K. Kim:
Study on electrostatic discharge (ESD) reliability improvement of ZnO-based multilayered chip varistor(MLV). 1565-1569 - C. Ali, C. Charpentier:
Fail / recover / fail (F/R/F) failure mechanisms new trend. 1571-1575 - Alberto Tosi, Franco Stellari, Franco Zappa:
Current crowding in faulty MOSFET: optical and electrical investigation. 1577-1581 - Joachim C. Reiner, Philipp Nellen, Urs Sennhauser:
Gallium Artefacts on FIB-milled Silicon Samples. 1583-1588 - Bernadette Domengès, B. Tiphaigne:
VCO phase noise improvement through direct passive component modification in the FIB. 1589-1592 - Frank Siegelin:
Failure analysis of vertical cavity surface emission laser diodes. 1593-1597 - Giovanna Mura, Massimo Vanzi, G. Micheletti:
Failure analysis of RFIC amplifiers. 1599-1604 - Felix Beaudoin, J. López, M. Faucon, Romain Desplats, Philippe Perdu:
Femtosecond Laser Ablation for Backside Silicon Thinning. 1605-1609 - Ilana Grimberg, H. Coulson, K. Williamson, J. Pohl, Z. Shafrir, Efrat Raz:
A Novel Automatic Polishing Technique for Micro-Controllers with 45° off Si <100> Rotation. 1611-1614 - Günther Benstetter, Peter Breitschopf, Werner Frammelsberger, Heiko Ranzinger, Peter Reislhuber, Thomas Schweinböck:
AFM-based scanning capacitance techniques for deep sub-micron semiconductor failure analysis. 1615-1619 - Stefano Aresu, Ward De Ceuninck, Geert Van den Bosch, Guido Groeseneken, Peter Moens, Jean Manca, D. Wojciechowski, P. Gassot:
Evidence for source side injection hot carrier effects on lateral DMOS transistors. 1621-1624 - Filip Bauwens, Peter Moens:
Locating hot carrier injection in n-type DeMOS transistors by Charge Pumping and 2D device simulations. 1625-1629 - Dimitrios N. Kouvatsos, Vojkan Davidovic, George J. Papaioannou, Ninoslav Stojadinovic, Loukas Michalas, M. A. Exarchos, Apostolos T. Voutsas, Dimitrios Goustouridis:
Effects of hot carrier and irradiation stresses on advanced excimer laser annealed polycrystalline silicon thin film transistors. 1631-1636 - Byung-Jin Lee, Kyosun Kim, Jong Tae Park:
Effects of hot carrier stress on the RF performance in SOI MOSFETs. 1637-1642 - M. A. Exarchos, François Dieudonné, Jalal Jomaah, George J. Papaioannou, Francis Balestra:
On the defects introduced by AC and DC hot carrier stress in SOI PD MOSFETs. 1643-1647 - Se Re Na Yun, Chong-Gun Yu, Seok Hee Jeon, Chungkyue Kim, Jong Tae Park, Jean-Pierre Colinge:
Reduced Hot Carrier Effects in Self-Aligned Ground-Plane FDSOI MOSFET's. 1649-1654 - Romain Desplats, Gaël Faggion, Mustapha Remmach, Felix Beaudoin, Philippe Perdu, Dean Lewis:
Time Resolved Photon Emission Processing Flow for IC Analysis. 1655-1662 - Franco Stellari, Peilin Song:
Testing of Ultra Low Voltage VLSI Chips using the Superconducting Single-Photon Detector (SSPD). 1663-1668 - Anton Stuffer:
Interactive and non-destructive verification of sram-descrambling with laser. 1669-1674 - Abdellatif Firiti, Felix Beaudoin, Gérald Haller, Philippe Perdu, Dean Lewis, Pascal Fouillat:
Understanding the effects of NIR laser stimulation on NMOS transistor. 1675-1680 - Marco Buzzo, Markus Leicht, Thomas Schweinböck, Mauro Ciappa, Maria Stangoni, Wolfgang Fichtner:
2D Dopant Profiling on 4H Silicon Carbide P+N Junction by Scanning Capacitance and Scanning Electron Microscopy. 1681-1686 - Sergey Bychikhin, Viktor Dubec, Dionyz Pogany, Erich Gornik, M. Graf, V. Dudek, Winfried Soppa:
Transient interferometric mapping of smart power SOI ESD protection devices under TLP and vf-TLP stress. 1687-1692 - Peter Dias-Lalcaca, Erwin Hack, Filippo Visintainer, Stefano Bernard, Urs Sennhauser:
A laser-based instrument for measuring strain in electronic packages using coherent fibre-bundles. 1693-1697 - Sanjib Kumar Brahma, Christian Boit, Arkadiusz Glowacki, Hiroyoshi Suzuki:
Localization of FET Device Performance with Thermal Laser Stimulation. 1699-1702 - Mauro Ciappa, Maria Stangoni, Wolfgang Fichtner, Elisa Ricci, Andrea Scorzoni:
On the Use of Neural Networks to Solve the Reverse Modelling Problem for the Quantification of Dopant Profiles Extracted by Scanning Probe Microscopy Techniques. 1703-1708 - Romain Desplats, S. Petit, Sana Rezgui, Carl Carmichael, Pascal Fouillat, Dean Lewis:
Investigation of SEU sensitivity of Xilinx Virtex II FPGA by pulsed laser fault injections. 1709-1714 - Mustapha Remmach, Romain Desplats, Philippe Perdu, J. P. Roux, Michel Vallet, Sylvain Dudit, P. Sardin, Dean Lewis:
Light Emission From Small Technologies. Are Silicon Based Detectors Reaching Their Limits? 1715-1720 - Kiyoteru Hayama, Kenichiro Takakura, Hidenori Ohyama, Abdelkarim Mercha, Eddy Simoen, Cor Claeys, Joan Marc Rafí, Michael Kokkoris:
Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation. 1721-1726 - Wei-Cheng Lin, Long-Jei Du, Ya-Chin King:
Reliability Evaluation and Redesign of LNA. 1727-1732 - Robert Modlinski, Ann Witvrouw, Petar Ratchev, Anne Jourdain, Veerle Simons, H. A. C. Tilmans, Jaap M. J. den Toonder, Robert Puers, Ingrid De Wolf:
Creep as a reliability problem in MEMS. 1733-1738 - Petra Schmitt, Xavier Lafontan, Francis Pressecq, B. Kurz, Coumar Oudéa, Daniel Estève, Jean-Yves Fourniols, Henri Camon:
Impact of the space environmental conditions on the reliability of a MEMS COTS based system. 1739-1744 - Nicolas Baboux, Carole Plossu, Philippe Boivin:
A new structure to monitor electrical transients during programming of EEPROM memory cells. 1745-1750 - Oleg Semenov, Michael S. Obrecht, Manoj Sachdev:
Evaluation of STI degradation using temperature dependence of leakage current in parasitic STI MOSFET. 1751-1755 - Frédéric Perisse, Pascal Venet, Gérard Rojat:
Reliability determination of aluminium electrolytic capacitors by the mean of various methods. Application to the protection system of the LHC. 1757-1762 - Simona Podda, G. Cassanelli, Fausto Fantini, Massimo Vanzi:
Failure Analysis of RuO2 Thick Film Chip Resistors. 1763-1767 - Walid Lajnef, Jean-Michel Vinassa, Stephane Azzopardi, Olivier Briat, Alexandrine Guédon-Gracia, Christian Zardini:
First step in the reliability assessment of ultracapacitors used as power source in hybrid electric vehicles. 1769-1773 - Philippe Galy, V. Berland, A. Guilhaume, F. Blanc, J. P. Chante:
Experimental measurements and 3D simulation of the parasitic lateral bipolar transistor triggering within a single finger gg-nMOS under ESD. 1775-1780 - Nicolas Guitard, David Trémouilles, Marise Bafleur, Laurent Escotte, Laurent Bary, Philippe Perdu, Gérard Sarrabayrouse, Nicolas Nolhier, Roberto Reyna-Rojas:
Low Frequency Noise Measurements for ESD Latent Defect Detection in High Reliability Applications. 1781-1786 - Peter Jacob, Joachim C. Reiner:
Electrostatic Effects on Semiconductor Tools. 1787-1792 - Viktor Dubec, Sergey Bychikhin, M. Blaho, Michael Heer, Dionyz Pogany, Marie Denison, Nils Jensen, Matthias Stecher, Gerhard Groos, Erich Gornik:
Multiple-time-instant 2D thermal mapping during a single ESD event. 1793-1798 - F. Barbier, Fabrice Blanc, A. Le Grontec, R. Colclaser, Theo Smedes, M. Johnson, Serge Bardy, Philippe Descamps:
Study and validation of a power-rail ESD clamp in BiCMOS process with a reduced temperature dependency of its leakage current. 1799-1804 - Tao Cheng, Y. S. Shyu:
The Failure Analysis of High Voltage Tolerance IO Buffer under ESD. 1805-1810 - Fabien Essely, Corinne Bestory, Nicolas Guitard, Marise Bafleur, A. Wislez, E. Doche, Philippe Perdu, André Touboul, Dean Lewis:
Study of the ESD defects impact on ICs reliability. 1811-1815 - Oleg Semenov, Hossein Sarbishaei, Valery Axelrad, Manoj Sachdev:
The Impact of CMOS technology scaling on MOSFETs second breakdown: Evaluation of ESD robustness. 1817-1822 - T. Wu, Theo Smedes, J. P. Lokker, S.-N. Mei, J. W. Slotboom:
A case study of ESD failures at random levels: analysis, explanation and solution. 1823-1827 - Yong-Ha Song, Choong-Kyun Kim, Moo-Young Park, Bum-Suk Kye, Jeongil Seo, Dong-Soo Cho, Taek-Soo Kim, Gab-soo Han:
A study of an abnormal ESD failure mechanism and threshold voltage caused by ESD current zapping sequence. 1829-1834 - J. R. Lloyd, M. R. Lane, X.-H. Liu, E. Liniger, T. M. Shaw, C.-K. Hu, R. Rosenberg:
Reliability Challenges with Ultra-Low k Interlevel Dielectrics. 1835-1841 - Guan Zhang, Cher Ming Tan, Kok Tong Tan, Derek Sim Kwang Ye, W. Y. Zhang:
Reliability Improvement in Al Metallization: A Combination of Statistical Prediction and Failure Analytical Methodology. 1843-1848 - Leen Biesemans, K. Schepers, Kris Vanstreels, Jan D'Haen, Ward De Ceuninck, Marc D'Olieslaeger:
MTF test system with AC based dynamic joule correction for electromigration tests on interconnects. 1849-1854 - Maurizio Impronta, Sandro Farris, Andrea Scorzoni:
An improved isothermal electromigration test for Cu-damascene characterization. 1855-1860 - J. R. Lloyd, E. Liniger, S. T. Chen:
Time dependent dielectric breakdown in a low-k interlevel dielectric. 1861-1865 - Changsoo Hong, Linda Milor, M. Z. Lin:
Analysis of the layout impact on electric fields in interconnect structures using finite element method. 1867-1871 - Chiara Corvasce, Mauro Ciappa, Davide Barlini, S. Sponton, Gaudenzio Meneghesso, Wolfgang Fichtner:
Characterization of self-heating effects in semiconductor resistors during transmission line pulses. 1873-1878 - Andreas Gehring, Siegfried Selberherr:
Statistical simulation of gate dielectric wearout, leakage, and breakdown. 1879-1884 - Vesselin K. Vassilev, Vladislav A. Vashchenko, Philippe Jansen, B.-J. Choi, Ann Concannon, J.-J. Yang, Guido Groeseneken, M. I. Natarajan, Marcel ter Beek, Peter Hopper, Michiel Steyaert, Herman E. Maes:
A CAD assisted design and optimisation methodology for over-voltage ESD protection circuits. 1885-1890
Volume 44, Number 12, December 2004
- Bart Vandevelde, Dag Andersson:
Package and solder joint reliability analysed by FEM simulation and experiments. 1891-1892 - Steffen Wiese, Sven Rzepka:
Time-independent elastic-plastic behaviour of solder materials. 1893-1900 - Wolfgang H. Müller:
Morphology changes in solder joints--experimental evidence and physical understanding. 1901-1914 - Marcel Gonzalez, Bart Vandevelde, R. Van Hoof, Eric Beyne:
Characterization and FE analysis on the shear test of electronic materials. 1915-1921 - Steffen Wiese, Klaus-Jürgen Wolter:
Microstructure and creep behaviour of eutectic SnAg and SnAgCu solders. 1923-1931 - Bernhard Wunderle, Wolfgang Nüchter, Andreas Schubert, Bernd Michel, Herbert Reichl:
Parametric FE-approach to flip-chip reliability under various loading conditions. 1933-1945 - Dao-Guo Yang, J. S. Liang, Quan-Yong Li, Leo J. Ernst, G. Q. Zhang:
Parametric study on flip chip package with lead-free solder joints by using the probabilistic designing approach. 1947-1955 - Tong Yan Tee, Zhaowei Zhong:
Board level solder joint reliability analysis and optimization of pyramidal stacked die BGA packages. 1957-1965 - Xuejun Fan, Jiang Zhou, G. Q. Zhang:
Multi-physics modeling in virtual prototyping of electronic packages--combined thermal, thermo-mechanical and vapor pressure modeling. 1967-1976 - Leon Xu, Tommi Reinikainen, Wei Ren, Bo Ping Wang, Zhenxue Han, Dereje Agonafer:
A simulation-based multi-objective design optimization of electronic packages under thermal cycling and bending. 1977-1983 - Marcel H. H. Meuwissen, Hedzer A. de Boer, Henk L. A. H. Steijvers, Piet J. G. Schreurs, Marc G. D. Geers:
Residual stresses in microelectronics induced by thermoset packaging materials during cure. 1985-1994 - Rudolf Krondorfer, Yeong K. Kim, Jaeok Kim, Claes-Gøran Gustafson, Timothy C. Lommasson:
Finite element simulation of package stress in transfer molded MEMS pressure sensors. 1995-2002 - Y. T. He, Marcel A. J. van Gils, Willem D. van Driel, G. Q. Zhang, Richard B. R. van Silfhout, Leo J. Ernst:
Prediction of crack growth in IC passivation layers. 2003-2009 - Viktor Gonda, Jaap M. J. den Toonder, Johan Beijer, G. Q. Zhang, Willem D. van Driel, Romano J. O. M. Hoofman, Leo J. Ernst:
Prediction of thermo-mechanical integrity of wafer backend processes. 2011-2017 - Willem D. van Driel, C. J. Liu, G. Q. Zhang, J. H. J. Janssen, Richard B. R. van Silfhout, Marcel A. J. van Gils, Leo J. Ernst:
Prediction of interfacial delamination in stacked IC structures using combined experimental and simulation methods. 2019-2027 - Mile K. Stojcev:
CMOS Telecom Data converters; Angel Rodriguez-Vazquez, Fernando Medeiro, Edmond Janssens, editors. Kluwer Academic Publishers, Boston; 2003. Hardcover, 588pp, plus XXXIII, 128 euro. ISBN 1-4020-7546-4. 2029-2030 - Mile K. Stojcev:
Design and control of RF power amplifier; Alireza Shirvani, Bruce Wooley. Kluwer Academic Publishers, Boston; 2003. Hardcover, pp. 149, plus XVI, 127 euro. ISBN 1-4020-7562-6. 2031-2032 - Mile K. Stojcev:
Low-voltage CMOS log companding analog design; Francisco Sera-Graells, Andoracion Rueda, Jose L. Huertas. Kluwer Academic Publishers, Boston; 2003. Hardcover, pp. 192, plus XXV, 117 euro. ISBN 1-4020-7445-X. 2033-2034
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