"Effect of SiO₂/Si interface roughness on gate current."

Lingfeng Mao et al. (2001)

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DOI: 10.1016/S0026-2714(01)00099-3

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type: Journal Article

metadata version: 2025-01-19

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Lingfeng Mao, Yao Yang, Jian-Lin Wei, Heqiu Zhang, Mingzhen Xu, Changhua Tan:
Effect of SiO₂/Si interface roughness on gate current. Microelectron. Reliab. 41(11): 1903-1907 (2001)

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