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ORCIDMicroelectronics Reliability, Volume 41
Volume 41, Number 1, January 2001
- Ninoslav Stojadinovic, Michael G. Pecht:
Editorial. 1
- Simon Deleonibus:
Alternative CMOS or alternative to CMOS? 3-12 - Joachim N. Burghartz:
Status and trends of silicon RF technology. 13-19 - Mattia Borgarino
, Roberto Menozzi, D. Dieci, L. Cattani, Fausto Fantini:
Reliability physics of compound semiconductor transistors for microwave applications. 21-30 - Wim Magnus, Wim Schoenmaker:
On the calculation of gate tunneling currents in ultra-thin metal-insulator-semiconductor capacitors. 31-35 - Nian Yang, Jimmie J. Wortman:
A study of the effects of tunneling currents and reliability of sub-2 nm gate oxides on scaled n-MOSFETs. 37-46 - Akinobu Teramoto, H. Umeda, K. Azamawari, K. Kobayashi, K. Shiga, J. Komori, Y. Ohno, A. Shigetomi:
Time-dependent dielectric breakdown of SiO2 films in a wide electric field range. 47-52 - Peter Coppens, Guido Vanhorebeek, Eddy De Backer:
Correlation between predicted cause of SRAM failures and in-line defect data. 53-57 - Milan Jevtic, Zdravko I. Stanimirovic, Ivanka P. Stanimirovic:
Evaluation of thick-film resistor structural parameters based on noise index measurements. 59-66 - Gady Golan, E. Rabinovich, A. Inberg, Alex Axelevitch, Gennady Lubarsky, Pier Giorgio Rancoita, M. Demarchi, A. Seidman, N. Croitoru:
Inversion phenomenon as a result of junction damages in neutron irradiated silicon detectors. 67-72 - Javier Mateos, Tomás González, Daniel Pardo, Virginie Hoel, Alain Cappy:
Monte Carlo simulation of electronic characteristics in short channel δ-doped AlInAs/GaInAs HEMTs. 73-77 - Hidenori Ohyama, Eddy Simoen, S. Kuroda, Cor Claeys, Y. Takami, T. Hakata, K. Kobayashi, M. Nakabayashi, Hiromi Sunaga:
Degradation and recovery of AlGaAs/GaAs p-HEMT irradiated by high-energy particle. 79-85 - B. K. Jones, C. N. Graham, A. Konczakowska, L. Hasse:
The coherence of the gate and drain noise in stressed AlGaAs-InAlGaAs PHEMTs. 87-97 - Gaetano Ferrante, Dominique Persano Adorno:
A wavelet analysis of 1/f and white noise in microwave transistors. 99-104 - X. Y. Chen, A. Pedersen, A. D. van Rheenen:
Effect of electrical and thermal stress on low-frequency noise characteristics of laser diodes. 105-110 - H. Oohashi, M. Fukuda, Yasuhiro Kondo, M. Yamamoto, Y. Kadota, Yoshihiro Kawaguchi, K. Kishi, Y. Tohmori, K. Yokoyama, Y. Itaya:
Highly reliable spot-size converter integrated laser diodes over a wide temperature range for access network systems. 111-118 - Chern-Sheng Lin, Li Wen Lue:
An image system for fast positioning and accuracy inspection of ball grid array boards. 119-128 - Fuchen Mu, Changhua Tan, Mingzhen Xu:
Proportional difference estimate method of determining characteristic parameters of normal and log-normal distributions. 129-131 - Klaus-Willi Pieper, Martin Sauter:
Direct temperature measurement of integrated microelectronic devices by thermally induced leakage currents. 133-136 - M. M. Shahidul Hassan, A. H. Khandoker:
New expression for base transit time in a bipolar transistor for all levels of injection. 137-140 - Milan Jevtic:
Guidebook for Managing Silicon Chip Reliability; Michael G. Pecht, Riko Radojcic, Gopal Rao. CRC Press LLC, Boca Raton, 1999, 224 pp. ISBN: 0-8493-9624-7. 141-142 - Ninoslav Stojadinovic:
Understanding Semiconductor Devices; Sima Dimitrijev. Oxford University Press, New York. 2000. ISBN: 0-19-513186-X. 142-143
Volume 41, Number 2, February 2001
- F. Schwierz, Juin J. Liou:
Semiconductor devices for RF applications: evolution and current status. 145-168 - Merlyne M. De Souza, J. Wang, S. K. Manhas, E. M. Sankara Narayanan, A. S. Oates:
A comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors. 169-177 - Hei Wong, P. G. Han, M. C. Poon, Y. Gao:
Investigation of the surface silica layer on porous poly-Si thin films. 179-184 - M. N. Levin, V. R. Gitlin, S. G. Kadmensky, S. S. Ostrouhov, V. S. Pershenkov:
X-ray and UV controlled adjustment of MOS VLSI circuits threshold voltages. 185-191 - Kin P. Cheung:
Unifying the thermal-chemical and anode-hole-injection gate-oxide breakdown models. 193-199 - C. T. Hsu, M. M. Lau, Y. T. Yeow:
Analysis of the gate capacitance measurement technique and its application for the evaluation of hot-carrier degradation in submicrometer MOSFETs. 201-209 - Robert C. Baumann, Eric B. Smith:
Neutron-induced 10B fission as a major source of soft errors in high density SRAMs. 211-218 - Alexander N. Bubennikov, Andrey V. Zykov:
Investigations of impact ionization phenomena in advanced transistors and speed-power improvement of BiMOS SRAM cells based on reverse base current effect. 219-228 - Gábor Harsányi, George Inzelt:
Comparing migratory resistive short formation abilities of conductor systems applied in advanced interconnection systems. 229-237 - Constance E. Schuster, Mark G. Vangel, Harry A. Schafft:
Improved estimation of the resistivity of pure copper and electrical determination of thin copper film dimensions. 239-252 - Liviu Militaru, A. Souifi, M. Mouis, Alain Chantre, G. Brémond:
Investigation of deep traps in silicon-germanium epitaxial base bipolar transistors with a single polysilicon quasi self-aligned architecture. 253-263 - Nicolas Valdaperez, Jean-Marc Routoure, Daniel Bloyet, Régis Carin, Serge Bardy, Jacques Lebailly:
Low-frequency noise in single-poly bipolar transistors at low base current density. 265-271 - Andrew C. Lamb, J. F. W. Schiz, J. M. Bonar, Fuccio Cristiano, Peter Ashburn, Stephen Hall, Peter L. F. Hemment:
Characterisation of emitter/base leakage currents in SiGe HBTs produced using selective epitaxy. 273-279 - Jingsong Xie, Michael G. Pecht, David DeDonato, Ali Hassanzadeh:
An investigation of the mechanical behavior of conductive elastomer interconnects. 281-286 - P. L. Tu, Y. C. Chan, K. C. Hung, J. K. L. Lai:
Study of micro-BGA solder joint reliability. 287-293 - Shatil Haque, Kalyan Siddabattula, Mike Craven, Sihua Wen, Xingsheng Liu, Dushan Boroyevich, Guo-Quan Lu:
Design issues of a three-dimensional packaging scheme for power modules. 295-305 - L. Y. Sheng, C. De Tandt, Willy Ranson, Roger Vounckx:
Reliability aspects of thermal micro-structures implemented on industrial 0.8 mum CMOS chips. 307-315 - Loren J. Wise, Ronald D. Schrimpf, Harold G. Parks, Kenneth F. Galloway:
A generalized model for the lifetime of microelectronic components, applied to storage conditions. 317-322 - Asad A. Ismaeel, Rajan Mathew, R. Bhatnagar:
Module allocation with idle-time utilization for on-line testability. 323-332
Volume 41, Number 3, March 2001
- Koen G. Verhaege:
Editorial. 333 - Steven H. Voldman, W. Anderson, R. Ashton, M. Chaine, Charvaka Duvvury, T. Maloney, E. Worley:
A strategy for characterization and evaluation of ESD robustness of CMOS semiconductor technologies. 335-348 - Jeremy C. Smith:
An anti-snapback circuit technique for inhibiting parasitic bipolar conduction during EOS/ESD events. 349-357 - Timothy J. Maloney, Wilson Kan:
Stacked PMOS clamps for high voltage power supply protection. 359-366 - Warren R. Anderson, William M. Gonzalez, Sheera S. Knecht, Wendy Fowler:
Reliability considerations for ESD protection under wire bonding pads. 367-373 - Karlheinz Bock, Bart Keppens, Vincent De Heyn, Guido Groeseneken, L. Y. Ching, A. Naem:
Influence of gate length on ESD-performance for deep submicron CMOS technology. 375-383 - Harald Gossner, T. Müller-Lynch, Kai Esmark, Matthias Stecher:
Wide range control of the sustaining voltage of electrostatic discharge protection elements realized in a smart power technology. 385-393 - Gianluca Boselli, Stan Meeuwsen, Ton J. Mouthaan, Fred G. Kuper:
Investigations on double-diffused MOS transistors under ESD zap conditions. 395-405 - Leo G. Henry, Mark A. Kelly, Tom Diep, Jon Barth:
Issues concerning charged device model ESD verification modules - the need to move to alumina. 407-415 - Ming-Dou Ker, Yu-Yu Sung:
Hardware/firmware co-design in an 8-bits microcontroller to solve the system-level ESD issue on keyboard. 417-429 - P. Schauer, Josef Sikula, Pavel Moravec:
Transport and noise properties of CdTe(Cl) crystals. 431-436 - R. Dreesen, Kris Croes, Jean Manca, Ward De Ceuninck, Luc De Schepper, A. Pergoot, Guido Groeseneken:
A new degradation model and lifetime extrapolation technique for lightly doped drain nMOSFETs under hot-carrier degradation. 437-443 - A. H. Fischer, A. Abel, M. Lepper, A. E. Zitzelsberger, A. von Glasow:
Modeling bimodal electromigration failure distributions. 445-453 - Keizo Yamada, Toyokazu Nakamura, Tohru Tsujide:
An in-line process monitoring method using electron beam induced substrate current. 455-459 - Thomas D. Moore, John L. Jarvis:
Improved reliability in small multichip ball grid arrays. 461-469 - Christian Rembe, Harald Aschemann, Stefan aus der Wiesche, Eberhard P. Hofer, Hélène Debéda, Jürgen Mohr, Ulrike Wallrabe:
Testing and improvement of micro-optical-switch dynamics. 471-480
Volume 41, Number 4, April 2001
- Ninoslav Stojadinovic, Michael G. Pecht:
In memory of D. Stewart Peck. 481 - Udo Schwalke:
Progress in device isolation technology. 483-490 - Roland Reicher, Walter Smetana, Julius C. Schuster, Alexander Adlaßnig:
A fritless copper conductor system for power electronic applications. 491-498 - Dale W. Swanson, Leonard R. Enlow:
Stress effects of epoxy adhesives on ceramic substrates and magnetics. 499-510 - Kai F. Dombrowski, B. Dietrich, Ingrid De Wolf, R. Rooyackers, G. Badenes:
Investigation of stress in shallow trench isolation using UV micro-Raman spectroscopy. 511-515 - M. P. Rodriguez, Noel Y. A. Shammas:
Finite element simulation of thermal fatigue in multilayer structures: thermal and mechanical approach. 517-523 - Yutaka Kumano, Yoshihiro Tomura, Minehiro Itagaki, Yoshihiro Bessho:
Development of chip-on-flex using SBB flip-chip technology. 525-530 - Dubravka Rocak, Darko Belavic, Marko Hrovat, Josef Sikula, Pavel Koktavy, Jan Pavelka, Vlasta Sedlakova:
Low-frequency noise of thick-film resistors as quality and reliability indicator. 531-542 - T. Pompl, C. Engel, H. Wurzer, Martin Kerber:
Soft breakdown and hard breakdown in ultra-thin oxides. 543-551 - Quan Qi:
Reliability studies of two flip-chip BGA packages using power cycling test. 553-562 - Zsolt Illyefalvi-Vitéz:
Laser processing for microelectronics packaging applications. 563-570 - D. Greg Walker, T. S. Fisher, J. Liu, Ronald D. Schrimpf:
Thermal modeling of single event burnout failure in semiconductor power devices. 571-578 - R. Kolarova, Thomas Skotnicki, J. A. Chroboczek:
Low frequency noise in thin gate oxide MOSFETs. 579-585 - Koji Eriguchi, Yoshinao Harada, Masaaki Niwa:
Effects of base layer thickness on reliability of CVD Si3N4 stack gate dielectrics. 587-595 - Hongxia Ren, Yue Hao:
Study on the degradation induced by donor interface state in deep-sub-micron grooved-gate P-channel MOSFET's. 597-604 - Magali Estrada, Antonio Cerdeira, Adelmo Ortiz-Conde, Francisco J. García-Sánchez:
Determination of trap cross-section in a-Si: H p-i-n diodes parameters using simulation and parameter extraction. 605-610 - Valentin Videkov, Slavka Tzanova, Radosvet Arnaudov, Nikolai Iordanov:
New assembling technique for BGA packages without thermal processes. 611-615 - Ammar M. Sarhan, Abdul-Rahman M. Abouammoh:
Reliability of k-out-of-n nonrepairable systems with nonindependent components subjected to common shocks. 617-621 - Milan Jevtic:
Optimal Reliability Design: Fundamentals and Applications; Way Kuo, Rajendra Prasad, Frank A. Tillman, Ching-Lai Mwang. Cambridge University Press, Cambridge, 2001, 389+XXI pp. ISBN: 0-521-78127-2 (hardbound). 623-624
Volume 41, Number 5, May 2001
- Elyse Rosenbaum, Jie Wu:
Trap generation and breakdown processes in very thin gate oxides. 625-632 - Petteri Palm, Jarmo Määttänen, Aulis Tuominen, Eero Ristolainen:
Reliability of 80 mum pitch flip chip attachment on flex. 633-638 - Shatil Haque, Guo-Quan Lu:
Effects of device passivation materials on solderable metallization of IGBTs. 639-647 - Everett E. King, Ronald C. Lacoe, Janet Wang-Ratkovic:
Influence of the lightly doped drain resistance on the worst-case hot-carrier stress condition for NMOS devices. 649-660 - Jaakko Lenkkeri, Tuomo Jaakola:
Rapid power cycling of flip-chip and CSP components on ceramic substrates. 661-668 - Andrzej Dziedzic, Leszek J. Golonka, Jaroslaw Kita, Heiko Thust, Karl-Heinz Drue, Reinhard Bauer, Lars Rebenklau, Klaus-Jürgen Wolter:
Electrical and stability properties and ultrasonic microscope characterisation of low temperature co-fired ceramics resistors. 669-676 - S. C. Hung, P. J. Zheng, S. H. Ho, S. C. Lee, H. N. Chen, J. D. Wu:
Board level reliability of PBGA using flex substrate. 677-687 - Yung-Huei Lee, Tom Linton, Ken Wu, Neal R. Mielke:
Effect of trench edge on pMOSFET reliability. 689-696 - Takayuki Yamada, Masaru Moriwaki, Yoshinao Harada, Shinji Fujii, Koji Eriguchi:
Effects of the sputtering deposition process of metal gate electrode on the gate dielectric characteristics. 697-704 - Greg Hotchkiss, Gonzalo Amador, Darvin Edwards, Paul Hundt, Les Stark, Roger Stierman, Gail Heinen:
Wafer level packaging of a tape flip-chip chip scale packages. 705-713 - Harry K. Charles Jr.:
Tradeoffs in multichip module yield and cost with known good die probability and repair. 715-733 - Frank Stepniak:
Conversion of the under bump metallurgy into intermetallics: the impact on flip chip reliability. 735-744 - Kin P. Cheung:
Impact of ESD protection device trigger transient on the reliability of ultra-thin gate oxide. 745-749 - Terence B. Hook, David Harmon, Chuan Lin:
Plasma process-induced damage on thick (6.8 nm) and thin (3.5 nm) gate oxide: parametric shifts, hot-carrier response, and dielectric integrity degradation. 751-765 - Dragan Manic, J. Petr, Rade S. Popovic:
Die stress drift measurement in IC plastic packages using the piezo-Hall effect. 767-771 - O. Mrooz, A. Kovalski, J. Pogorzelska, O. I. Shpotyuk, M. Vakiv, Bohdan S. Butkiewicz, J. Maciak:
Thermoelectrical degradation processes in NTC thermistors for in-rush current protection of electronic circuits. 773-777
Volume 41, Number 6, June 2001
- Brian K. Jones:
In the memory of Yisong Dai. 779 - Stephen O'Reilly, Maeve Duffy, Thomas Ott, Terence O'Donnell, Paul McCloskey, S. Cian O'Mathuna:
Characterisation of embedded filters in advanced printed wiring boards. 781-788 - Roland Sorge, Bernd Heinemann:
Recombination current measurements in the space charge region of MOS field-induced pn junctions. 789-795 - Mark Zwolinski:
A technique for transparent fault injection and simulation in VHDL. 797-804 - Michael J. Dion:
Improved understanding of metal ion reservoirs within barrier-metal systems. 805-814 - Michael Schenkel, Paul Pfäffli, Wolfgang Wilkening, D. Aemmer, Wolfgang Fichtner:
Substrate potential shift due to parasitic minority carrier injection in smart-power ICs: measurements and full-chip 3D device simulation. 815-822 - Mirko Jakovljevic, Peter A. Fotiu, Zeljko Mrcarica, Vanco B. Litovski, Helmut Detter:
Electro-thermal simulation of microsystems with mixed abstraction modelling. 823-835 - Slobodan Mijalkovic:
A new finite element approach to stress analysis in microfabrication technology. 837-845 - M. J. Martín-Martínez, Susana Pérez, Daniel Pardo, Tomás González:
High injection effects on noise characteristics of Si BJTs and SiGe HBTs. 847-854 - Sébastien Haendler, Jalal Jomaah, Gérard Ghibaudo, Francis Balestra:
Improved analysis of low frequency noise in dynamic threshold MOS/SOI transistors. 855-860 - Michael Scheffler, Didier Cottet, Gerhard Tröster:
A simplified yield modeling method for design rule trade-off in interconnection substrates. 861-869 - Gady Golan, Alex Axelevitch, E. Rabinovitch:
Effects of electron beam generated in vacuum photo-thermal processing on metal-silicon contacts. 871-879 - Martin Sandén, B. Gunnar Malm, Jan V. Grahn, Mikael Östling:
Lateral base design rules for optimized low-frequency noise of differentially grown SiGe heterojunction bipolar transistors. 881-886 - J. Barton, G. McCarthy, R. Doyle, K. Delaney, Enric Cabruja, Manuel Lozano, Ana Collado, Joaquín Santander:
Reliability evaluation of a silicon-on-silicon MCM-D package. 887-899 - F. N. Masana:
A new approach to the dynamic thermal modelling of semiconductor packages. 901-912 - W. Y. Ho, C. Surya:
Study of light-induced annealing effects in a-Si: H thin films. 913-917 - Yisong Dai:
Generation-recombination noise in bipolar transistors. 919-925 - Lingfeng Mao, Changhua Tan, Mingzhen Xu:
The effect of image potential on electron transmission and electric current in the direct tunneling regime of ultra-thin MOS structures. 927-931
Volume 41, Number 7, July 2001
- Georges Charitat:
In memory of Pierre Rossel. 933-934 - Andreas Martin:
Editorial. 935 - Gerald Lucovsky, Gilbert B. Rayner, Robert S. Johnson:
Chemical and physical limits on the performance of metal silicate high-k gate dielectrics. 937-945 - Thomas Mikolajick, Christine Dehm, Walter Hartner, Ivan Kasko, M. J. Kastner, Nicolas Nagel, Manfred Moert, Carlos Mazure:
FeRAM technology for high density applications. 947-950 - P. O'Sullivan, Raphael Clerc, Kevin G. McCarthy, Alan Mathewson, Gérard Ghibaudo:
Direct tunnelling models for circuit simulation. 951-957 - Gilles Reimbold, T. Poiroux:
Plasma charging damage mechanisms and impact on new technologies. 959-965 - R. Falster, F. Bonoli, V. V. Voronkov:
Dielectric breakdown distributions for void containing silicon substrates. 967-971 - G. Innertsberger, T. Pompl, Martin Kerber:
The influence of p-polysilicon gate doping on the dielectric breakdown of PMOS devices. 973-975