"Active defects in MOS devices on 4H-SiC: A critical review."

Hamid Amini Moghadam et al. (2016)

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DOI: 10.1016/J.MICROREL.2016.02.006

access: closed

type: Journal Article

metadata version: 2021-10-14

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Hamid Amini Moghadam, Sima Dimitrijev, Jisheng Han, Daniel Haasmann:
Active defects in MOS devices on 4H-SiC: A critical review. Microelectron. Reliab. 60: 1-9 (2016)

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