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ORCIDMicroelectronics Reliability, Volume 60
Volume 60, May 2016
- Hamid Amini Moghadam
, Sima Dimitrijev, Jisheng Han, Daniel Haasmann:
Active defects in MOS devices on 4H-SiC: A critical review. 1-9 - Chih-Chan Hu, Yuan-Fong Chou Chau, Chee Ming Lim, Kuang-Hsiung Tan:
Comparative study of low-frequency noise in 0.18 μm and 0.35 μm gate-length nMOSFETs with gate area of 1.1 μm2. 10-15 - J. Chen, Takamasa Kawanago, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, D. Nohata, Hiroshi Nohira, Kuniyuki Kakushima:
La2O3 gate dielectrics for AlGaN/GaN HEMT. 16-19 - Chie-In Lee, Yan-Ting Lin, Wei-Cheng Lin:
Analysis of temperature dependence of linearity for SiGe HBTs in the avalanche region using Volterra series. 20-24 - Du Tang, Ignacio Martin-Bragado, Chaohui He, Hang Zang, Cen Xiong, Yonghong Li, Daxi Guo, Peng Zhang, Jinxin Zhang:
Time dependent modeling of single particle displacement damage in silicon devices. 25-32 - Sriram S. R., Bindu Boby:
Impact of NBTI induced variations on delay locked loop multi-phase clock generator. 33-40 - Cunbo Zhang, Jian-de Zhang, Honggang Wang, Guangxing Du:
Damage effects on low noise amplifiers with microwave pulses. 41-47 - Marco Rigamonti, Piero Baraldi, Enrico Zio, Allegra Alessi, Daniel Astigarraga, Ainhoa Galarza:
Identification of the degradation state for condition-based maintenance of insulated gate bipolar transistors: A self-organizing map approach. 48-61 - Marius Rutkauskas, Carl Farrell, Christophe Dorrer, Kara L. Marshall, Tom Crawford, Ted R. Lundquist, P. Vedagarbha, K. Erington, D. Bodoh, Derryck Telford Reid:
Two-photon laser-assisted device alteration in CMOS integrated circuits using linearly, circularly and radially polarized light. 62-66 - Mingzhi Dai:
A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors. 67-69 - Kaiming Nie, Jianxin Li, Zhiyuan Gao, Jiangtao Xu:
A transient noise simulation model for the analysis of the optimal number of stages of the analog accumulator in TDI CMOS image sensors. 70-77 - Piotr Kocanda, Andrzej Kos:
Improvement of multicores throughput based on environmental conditions. 78-83 - Vinod K. Murugan, Zhigang Jia, Govindo J. Syaranamual, Chee Lip Gan, Yizhong Huang, Zhong Chen:
Atmospheric corrosion resistance of electroplated Ni/Ni-P/Au electronic contacts. 84-92 - Frank Steinhäußer, Armin Talai, Gabriela Sandulache, Robert Weigel, Alexander Koelpin, Wolfgang Hansal, Achim Bittner, Ulrich Schmid:
Pulse plated silver metallization on porosified LTCC substrates for high frequency applications. 93-100 - X. Y. Wang, Q. Cheng, X. P. Ma, H. Zhang, M. X. Li, T. N. Chen, P. Zhang, J. Q. Shao:
Improvement of reliability for high-ohmic Cr-Si thin film resistors in a heat and humid environment: Removing moisture source by electrocatalytic decomposition of water. 101-108 - Dapeng Liu, Jing Wang, Ruiyang Liu, S. B. Park:
An examination on the direct concentration approach to simulating moisture diffusion in a multi-material system. 109-115 - Adeel Ahmad Bajwa, Jürgen Wilde:
Reliability modeling of Sn-Ag transient liquid phase die-bonds for high-power SiC devices. 116-125 - Zhenyu Zhao, Lei Liu, Hyun Seok Choi, Jian Cai, Qian Wang, Yuming Wang, Guisheng Zou:
Effect of nano-Al2O3 reinforcement on the microstructure and reliability of Sn-3.0Ag-0.5Cu solder joints. 126-134 - David Busek, Karel Dusek, D. Ruzicka, M. Placek, P. Mach, J. Urbánek, Jirí Starý:
Flux effect on void quantity and size in soldered joints. 135-140 - Deepak Kachave, Anirban Sengupta:
Integrating physical level design and high level synthesis for simultaneous multi-cycle transient and multiple transient fault resiliency of application specific datapath processors. 141-152 - Alejandro Velasco, Bartolomeo Montrucchio, Maurizio Rebaudengo:
KITO tool: A fault injection environment in Linux kernel data structures. 153-162
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