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"Electrical characteristics of a-IGZO transistors along the in-plane axis ..."

Chang Bum Park et al. (2016)

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DOI: 10.1016/J.MICROREL.2016.01.006

access: closed

type: Journal Article

metadata version: 2020-02-22

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Chang Bum Park, HyungIl Na, Soon Sung Yoo, Kwon-Shik Park:
Electrical characteristics of a-IGZO transistors along the in-plane axis during outward bending. Microelectron. Reliab. 59: 37-43 (2016)

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