"Impact of gate oxide nitridation process on 1/f noise in 0.18 mum CMOS."

M. Da Rold et al. (2001)

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DOI: 10.1016/S0026-2714(01)00098-1

access: closed

type: Journal Article

metadata version: 2020-02-22

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M. Da Rold, Eddy Simoen, Sofie Mertens, Marc Schaekers, G. Badenes, Stefaan Decoutere:
Impact of gate oxide nitridation process on 1/f noise in 0.18 mum CMOS. Microelectron. Reliab. 41(12): 1933-1938 (2001)

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