"Study of the breakdown failure mechanisms for power AlGaN/GaN HEMTs ..."

Gang Xie et al. (2012)

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DOI: 10.1016/J.MICROREL.2011.11.022

access: closed

type: Journal Article

metadata version: 2021-10-19

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Gang Xie, Edward Xu, Bo Zhang, Wai Tung Ng:
Study of the breakdown failure mechanisms for power AlGaN/GaN HEMTs implemented using a RF compatible process. Microelectron. Reliab. 52(6): 964-968 (2012)

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