"Enhancing the Resistive Switching Properties of Transparent HfO2-Based ..."

Taegi Kim et al. (2024)

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DOI: 10.3390/S24196382

access: open

type: Journal Article

metadata version: 2024-10-22

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Taegi Kim, Doowon Lee, Myoungsu Chae, Kyeong-Heon Kim, Hee-Dong Kim:
Enhancing the Resistive Switching Properties of Transparent HfO2-Based Memristor Devices for Reliable Gasistor Applications. Sensors 24(19): 6382 (2024)

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